SG10201405334TA - Epitaxial Growth Of Compound Semiconductors Using Lattice-Tuned Domain-Matching Epitaxy - Google Patents

Epitaxial Growth Of Compound Semiconductors Using Lattice-Tuned Domain-Matching Epitaxy

Info

Publication number
SG10201405334TA
SG10201405334TA SG10201405334TA SG10201405334TA SG10201405334TA SG 10201405334T A SG10201405334T A SG 10201405334TA SG 10201405334T A SG10201405334T A SG 10201405334TA SG 10201405334T A SG10201405334T A SG 10201405334TA SG 10201405334T A SG10201405334T A SG 10201405334TA
Authority
SG
Singapore
Prior art keywords
lattice
epitaxial growth
compound semiconductors
matching epitaxy
tuned
Prior art date
Application number
SG10201405334TA
Other languages
English (en)
Inventor
M Hawryluk Andrew
Stearns Daniel
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of SG10201405334TA publication Critical patent/SG10201405334TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SG10201405334TA 2013-09-27 2014-08-29 Epitaxial Growth Of Compound Semiconductors Using Lattice-Tuned Domain-Matching Epitaxy SG10201405334TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/040,326 US20150090180A1 (en) 2013-09-27 2013-09-27 Epitaxial growth of compound semiconductors using lattice-tuned domain-matching epitaxy

Publications (1)

Publication Number Publication Date
SG10201405334TA true SG10201405334TA (en) 2015-04-29

Family

ID=52738848

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201405334TA SG10201405334TA (en) 2013-09-27 2014-08-29 Epitaxial Growth Of Compound Semiconductors Using Lattice-Tuned Domain-Matching Epitaxy

Country Status (6)

Country Link
US (1) US20150090180A1 (ja)
JP (2) JP2015096460A (ja)
KR (1) KR20150035413A (ja)
CN (1) CN104517817A (ja)
SG (1) SG10201405334TA (ja)
TW (1) TWI550689B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104947070B (zh) * 2015-06-01 2018-03-02 深圳大学 一种二硫化钼薄膜的制备方法及二硫化钼薄膜

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61106495A (ja) * 1984-10-29 1986-05-24 Matsushita Electric Ind Co Ltd ３−５化合物単結晶薄膜をそなえたＳｉ基板およびその製造方法
JPH03203316A (ja) * 1989-12-29 1991-09-05 Showa Denko Kk エピタキシャルウェーハ及びその製造方法
US5225366A (en) * 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
JPH0488627A (ja) * 1990-07-31 1992-03-23 Oki Electric Ind Co Ltd エピタキシャル層の成長法
US5221413A (en) * 1991-04-24 1993-06-22 At&T Bell Laboratories Method for making low defect density semiconductor heterostructure and devices made thereby
JPH04370920A (ja) * 1991-06-20 1992-12-24 Matsushita Electric Ind Co Ltd 化合物半導体のエピタキシャル成長方法
JPH06349733A (ja) * 1993-06-11 1994-12-22 Sumitomo Metal Ind Ltd 化合物半導体基板及びその製造方法
JPH088627A (ja) * 1994-06-23 1996-01-12 Mitsubishi Electric Corp ヘリカルアンテナの給電線固定方法
US5548128A (en) * 1994-12-14 1996-08-20 The United States Of America As Represented By The Secretary Of The Air Force Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates
JPH08222812A (ja) * 1995-02-17 1996-08-30 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体の結晶成長方法
JP2000124444A (ja) * 1998-10-12 2000-04-28 Hitachi Cable Ltd 半導体装置及びエピタキシャルウェハ
TWI246116B (en) * 2004-04-14 2005-12-21 Witty Mate Corp Process for growing ZnSe Epitaxy layer on Si substrate and semiconductor structure thereby
WO2009063288A1 (en) * 2007-11-15 2009-05-22 S.O.I.Tec Silicon On Insulator Technologies Semiconductor structure having a protective layer
US8575471B2 (en) * 2009-08-31 2013-11-05 Alliance For Sustainable Energy, Llc Lattice matched semiconductor growth on crystalline metallic substrates
GB2487531A (en) * 2011-01-20 2012-08-01 Sharp Kk Substrate system consisting of a metamorphic transition region comprising a laminate of AlxGa1-x N and the same material as the substrate.
US8957454B2 (en) * 2011-03-03 2015-02-17 International Rectifier Corporation III-Nitride semiconductor structures with strain absorbing interlayer transition modules
CN103035794B (zh) * 2012-12-11 2015-11-11 广州市众拓光电科技有限公司 一种生长在Si衬底上的LED外延片及其制备方法

Also Published As

Publication number Publication date
KR20150035413A (ko) 2015-04-06
TWI550689B (zh) 2016-09-21
CN104517817A (zh) 2015-04-15
JP2015096460A (ja) 2015-05-21
TW201519286A (zh) 2015-05-16
US20150090180A1 (en) 2015-04-02
JP2018078322A (ja) 2018-05-17

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