GB201318420D0 - Crack-free gallium nitride materials - Google Patents

Crack-free gallium nitride materials

Info

Publication number
GB201318420D0
GB201318420D0 GB201318420A GB201318420A GB201318420D0 GB 201318420 D0 GB201318420 D0 GB 201318420D0 GB 201318420 A GB201318420 A GB 201318420A GB 201318420 A GB201318420 A GB 201318420A GB 201318420 D0 GB201318420 D0 GB 201318420D0
Authority
GB
United Kingdom
Prior art keywords
crack
gallium nitride
nitride materials
free gallium
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB201318420A
Other versions
GB2519338A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanogan Ltd
Original Assignee
Nanogan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanogan Ltd filed Critical Nanogan Ltd
Priority to GB1318420.5A priority Critical patent/GB2519338A/en
Publication of GB201318420D0 publication Critical patent/GB201318420D0/en
Priority to TW103135842A priority patent/TWI684203B/en
Priority to DE102014015782.2A priority patent/DE102014015782B4/en
Priority to US14/517,735 priority patent/US20150111370A1/en
Publication of GB2519338A publication Critical patent/GB2519338A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12458—All metal or with adjacent metals having composition, density, or hardness gradient
GB1318420.5A 2013-10-17 2013-10-17 Crack-free gallium nitride materials Withdrawn GB2519338A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB1318420.5A GB2519338A (en) 2013-10-17 2013-10-17 Crack-free gallium nitride materials
TW103135842A TWI684203B (en) 2013-10-17 2014-10-16 Crack-free gallium nitride materials
DE102014015782.2A DE102014015782B4 (en) 2013-10-17 2014-10-17 Method of making gallium nitride materials and semiconductor master
US14/517,735 US20150111370A1 (en) 2013-10-17 2014-10-17 Crack-free gallium nitride materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1318420.5A GB2519338A (en) 2013-10-17 2013-10-17 Crack-free gallium nitride materials

Publications (2)

Publication Number Publication Date
GB201318420D0 true GB201318420D0 (en) 2013-12-04
GB2519338A GB2519338A (en) 2015-04-22

Family

ID=49726968

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1318420.5A Withdrawn GB2519338A (en) 2013-10-17 2013-10-17 Crack-free gallium nitride materials

Country Status (4)

Country Link
US (1) US20150111370A1 (en)
DE (1) DE102014015782B4 (en)
GB (1) GB2519338A (en)
TW (1) TWI684203B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6437404B2 (en) 2015-09-09 2018-12-12 東芝メモリ株式会社 Manufacturing method of semiconductor device
TWI670852B (en) * 2017-01-23 2019-09-01 比利時商愛美科公司 Iii-n based substrate for power electronic devices and method for manufacturing same
TWI631668B (en) * 2017-11-22 2018-08-01 聯鈞光電股份有限公司 Nitride semiconductor structure
WO2021258293A1 (en) * 2020-06-23 2021-12-30 Innoscience (Zhuhai) Technology Co., Ltd. Semiconductor device structures and methods of manufacturing the same
CN112071743A (en) * 2020-09-21 2020-12-11 中国科学院长春光学精密机械与物理研究所 High-quality low-resistivity semiconductor material and growth method thereof
CN116497457B (en) * 2023-05-29 2023-09-12 中国科学院宁波材料技术与工程研究所 Superlattice composite coating with low friction and long service life and preparation method and application thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5445897A (en) * 1989-11-22 1995-08-29 Mitsubishi Kasei Polytec Company Epitaxial wafer and process for producing the same
GB9516793D0 (en) 1995-08-16 1995-10-18 Herbert R J Eng Ltd Apparatus and method for inspecting and sorting articles
JP3505405B2 (en) * 1998-10-22 2004-03-08 三洋電機株式会社 Semiconductor device and method of manufacturing the same
JP4269541B2 (en) * 2000-08-01 2009-05-27 株式会社Ｓｕｍｃｏ Semiconductor substrate, field effect transistor, method of forming SiGe layer, method of forming strained Si layer using the same, and method of manufacturing field effect transistor
WO2002013245A1 (en) 2000-08-04 2002-02-14 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
TW503590B (en) * 2001-04-27 2002-09-21 Highlink Technology Corp Manufacturing method for buffer layer of light emitting semiconductor devices
GB0212616D0 (en) * 2002-05-31 2002-07-10 Univ Warwick Formation of lattice-tuning semiconductor substrates
KR20070062686A (en) * 2005-12-13 2007-06-18 엘지이노텍 주식회사 Nitride semiconductor light emitting diode and fabrication method
KR100756841B1 (en) * 2006-03-13 2007-09-07 서울옵토디바이스주식회사 Light emitting diode having graded buffer layer and fabrication method thereof
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
TW201002462A (en) * 2008-07-03 2010-01-16 Advanced Semiconductor Eng Wafer laser-marking method and die fabricated using the same
JP5785103B2 (en) * 2012-01-16 2015-09-24 シャープ株式会社 Epitaxial wafers for heterojunction field effect transistors.
US9691855B2 (en) * 2012-02-17 2017-06-27 Epistar Corporation Method of growing a high quality III-V compound layer on a silicon substrate
JP5228122B1 (en) * 2012-03-08 2013-07-03 株式会社東芝 Nitride semiconductor device and nitride semiconductor wafer
KR20130141290A (en) * 2012-06-15 2013-12-26 삼성전자주식회사 Superlattice structure and semiconductor device having the same

Also Published As

Publication number Publication date
GB2519338A (en) 2015-04-22
TWI684203B (en) 2020-02-01
DE102014015782B4 (en) 2020-10-22
DE102014015782A1 (en) 2015-04-23
TW201523704A (en) 2015-06-16
US20150111370A1 (en) 2015-04-23

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