SE9901771L - Förbättrad RF-effekttransistor - Google Patents
Förbättrad RF-effekttransistorInfo
- Publication number
- SE9901771L SE9901771L SE9901771A SE9901771A SE9901771L SE 9901771 L SE9901771 L SE 9901771L SE 9901771 A SE9901771 A SE 9901771A SE 9901771 A SE9901771 A SE 9901771A SE 9901771 L SE9901771 L SE 9901771L
- Authority
- SE
- Sweden
- Prior art keywords
- resistor
- transistor
- silicon bipolar
- integrated
- transistor device
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910001120 nichrome Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9901771A SE515836C3 (sv) | 1999-05-17 | 1999-05-17 | Förfarande för tillverkning av en bipolär högfrekvent kiseltransistor samt effekttransistoranordning |
TW088108739A TW461109B (en) | 1999-05-17 | 1999-05-27 | Method for manufacturing a silicon bipolar power high frequency transistor and power transistor device |
CN00807672A CN1352806A (zh) | 1999-05-17 | 2000-05-12 | 改进的射频功率晶体管 |
PCT/SE2000/000943 WO2000070681A1 (en) | 1999-05-17 | 2000-05-12 | Improved rf power transistor |
KR1020017014395A KR20020000804A (ko) | 1999-05-17 | 2000-05-12 | 실리콘 바이폴라 전력 고주파 트랜지스터 제조 방법 및 rf 전력 트랜지스터 장치 |
EP00931832A EP1186040A1 (en) | 1999-05-17 | 2000-05-12 | Improved rf power transistor |
CA002373752A CA2373752A1 (en) | 1999-05-17 | 2000-05-12 | Improved rf power transistor |
AU49650/00A AU4965000A (en) | 1999-05-17 | 2000-05-12 | Improved rf power transistor |
JP2000619032A JP2003500836A (ja) | 1999-05-17 | 2000-05-12 | 改良型高周波パワー・トランジスタ |
US09/572,399 US6340618B1 (en) | 1999-05-17 | 2000-05-16 | RF power transistor |
US09/975,519 US6483170B2 (en) | 1999-05-17 | 2001-10-10 | RF power transistor |
HK02107353.4A HK1046060A1 (zh) | 1999-05-17 | 2002-10-08 | 改進的射頻功率晶體管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9901771A SE515836C3 (sv) | 1999-05-17 | 1999-05-17 | Förfarande för tillverkning av en bipolär högfrekvent kiseltransistor samt effekttransistoranordning |
Publications (4)
Publication Number | Publication Date |
---|---|
SE9901771D0 SE9901771D0 (sv) | 1999-05-17 |
SE9901771L true SE9901771L (sv) | 2000-11-18 |
SE515836C2 SE515836C2 (sv) | 2001-10-15 |
SE515836C3 SE515836C3 (sv) | 2001-11-06 |
Family
ID=20415606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9901771A SE515836C3 (sv) | 1999-05-17 | 1999-05-17 | Förfarande för tillverkning av en bipolär högfrekvent kiseltransistor samt effekttransistoranordning |
Country Status (11)
Country | Link |
---|---|
US (2) | US6340618B1 (sv) |
EP (1) | EP1186040A1 (sv) |
JP (1) | JP2003500836A (sv) |
KR (1) | KR20020000804A (sv) |
CN (1) | CN1352806A (sv) |
AU (1) | AU4965000A (sv) |
CA (1) | CA2373752A1 (sv) |
HK (1) | HK1046060A1 (sv) |
SE (1) | SE515836C3 (sv) |
TW (1) | TW461109B (sv) |
WO (1) | WO2000070681A1 (sv) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7226835B2 (en) * | 2001-12-28 | 2007-06-05 | Texas Instruments Incorporated | Versatile system for optimizing current gain in bipolar transistor structures |
US6841795B2 (en) * | 2002-10-25 | 2005-01-11 | The University Of Connecticut | Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation |
US6974969B2 (en) | 2003-01-13 | 2005-12-13 | The University Of Connecticut | P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer |
US6946720B2 (en) * | 2003-02-13 | 2005-09-20 | Intersil Americas Inc. | Bipolar transistor for an integrated circuit having variable value emitter ballast resistors |
DE102004023193B4 (de) * | 2004-05-11 | 2009-11-19 | Infineon Technologies Ag | Transistoranordnung und Herstellungsverfahren derselben |
JP2007165492A (ja) * | 2005-12-13 | 2007-06-28 | Seiko Instruments Inc | 半導体集積回路装置 |
CN101986434A (zh) * | 2010-12-17 | 2011-03-16 | 中国电子科技集团公司第五十五研究所 | 一种横向双极晶体管及其制作方法 |
CN103730486A (zh) * | 2013-10-18 | 2014-04-16 | 苏州贝克微电子有限公司 | 一种横向pnp功率晶体管 |
CN113161351B (zh) * | 2021-03-23 | 2022-03-11 | 江苏新顺微电子股份有限公司 | 双极晶体管集成高压启动电阻的器件结构及制造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3597640A (en) * | 1969-04-10 | 1971-08-03 | Nat Semiconductor Corp | Short circuit protection means for semiconductive circuit apparatus |
DE3382183D1 (de) * | 1982-12-23 | 1991-04-04 | Sumitomo Electric Industries | Monolithische integrierte mikrowellenschaltung und verfahren zum auswaehlen derselben. |
US5414296A (en) * | 1992-12-22 | 1995-05-09 | Spectrian, Inc. | Venetian blind cell layout for RF power transistor |
US5329156A (en) * | 1992-12-22 | 1994-07-12 | Spectrian, Inc. | Feed bus for RF power transistors |
MY115336A (en) | 1994-02-18 | 2003-05-31 | Ericsson Telefon Ab L M | Electromigration resistant metallization structures and process for microcircuit interconnections with rf-reactively sputtered titanium tungsten and gold |
US5684326A (en) * | 1995-02-24 | 1997-11-04 | Telefonaktiebolaget L.M. Ericsson | Emitter ballast bypass for radio frequency power transistors |
EP0810503B1 (en) * | 1996-05-14 | 2001-12-19 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | An integrated circuit with a device having a predetermined reverse conduction threshold and a thermal compensation device with Vbe multipliers |
-
1999
- 1999-05-17 SE SE9901771A patent/SE515836C3/sv not_active IP Right Cessation
- 1999-05-27 TW TW088108739A patent/TW461109B/zh not_active IP Right Cessation
-
2000
- 2000-05-12 KR KR1020017014395A patent/KR20020000804A/ko not_active Application Discontinuation
- 2000-05-12 CN CN00807672A patent/CN1352806A/zh active Pending
- 2000-05-12 CA CA002373752A patent/CA2373752A1/en not_active Abandoned
- 2000-05-12 JP JP2000619032A patent/JP2003500836A/ja not_active Withdrawn
- 2000-05-12 WO PCT/SE2000/000943 patent/WO2000070681A1/en not_active Application Discontinuation
- 2000-05-12 EP EP00931832A patent/EP1186040A1/en not_active Withdrawn
- 2000-05-12 AU AU49650/00A patent/AU4965000A/en not_active Abandoned
- 2000-05-16 US US09/572,399 patent/US6340618B1/en not_active Expired - Lifetime
-
2001
- 2001-10-10 US US09/975,519 patent/US6483170B2/en not_active Expired - Lifetime
-
2002
- 2002-10-08 HK HK02107353.4A patent/HK1046060A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2000070681A1 (en) | 2000-11-23 |
AU4965000A (en) | 2000-12-05 |
SE515836C2 (sv) | 2001-10-15 |
HK1046060A1 (zh) | 2002-12-20 |
CN1352806A (zh) | 2002-06-05 |
JP2003500836A (ja) | 2003-01-07 |
US20020036325A1 (en) | 2002-03-28 |
SE515836C3 (sv) | 2001-11-06 |
US6483170B2 (en) | 2002-11-19 |
US6340618B1 (en) | 2002-01-22 |
TW461109B (en) | 2001-10-21 |
KR20020000804A (ko) | 2002-01-05 |
EP1186040A1 (en) | 2002-03-13 |
CA2373752A1 (en) | 2000-11-23 |
SE9901771D0 (sv) | 1999-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |