SE9901771L - Förbättrad RF-effekttransistor - Google Patents

Förbättrad RF-effekttransistor

Info

Publication number
SE9901771L
SE9901771L SE9901771A SE9901771A SE9901771L SE 9901771 L SE9901771 L SE 9901771L SE 9901771 A SE9901771 A SE 9901771A SE 9901771 A SE9901771 A SE 9901771A SE 9901771 L SE9901771 L SE 9901771L
Authority
SE
Sweden
Prior art keywords
resistor
transistor
silicon bipolar
integrated
transistor device
Prior art date
Application number
SE9901771A
Other languages
English (en)
Other versions
SE9901771D0 (sv
SE515836C3 (sv
SE515836C2 (sv
Inventor
Ted Johansson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9901771A priority Critical patent/SE515836C3/sv
Publication of SE9901771D0 publication Critical patent/SE9901771D0/sv
Priority to TW088108739A priority patent/TW461109B/zh
Priority to CN00807672A priority patent/CN1352806A/zh
Priority to PCT/SE2000/000943 priority patent/WO2000070681A1/en
Priority to KR1020017014395A priority patent/KR20020000804A/ko
Priority to AU49650/00A priority patent/AU4965000A/en
Priority to JP2000619032A priority patent/JP2003500836A/ja
Priority to EP00931832A priority patent/EP1186040A1/en
Priority to CA002373752A priority patent/CA2373752A1/en
Priority to US09/572,399 priority patent/US6340618B1/en
Publication of SE9901771L publication Critical patent/SE9901771L/sv
Priority to US09/975,519 priority patent/US6483170B2/en
Publication of SE515836C2 publication Critical patent/SE515836C2/sv
Publication of SE515836C3 publication Critical patent/SE515836C3/sv
Priority to HK02107353.4A priority patent/HK1046060A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
SE9901771A 1999-05-17 1999-05-17 Förfarande för tillverkning av en bipolär högfrekvent kiseltransistor samt effekttransistoranordning SE515836C3 (sv)

Priority Applications (12)

Application Number Priority Date Filing Date Title
SE9901771A SE515836C3 (sv) 1999-05-17 1999-05-17 Förfarande för tillverkning av en bipolär högfrekvent kiseltransistor samt effekttransistoranordning
TW088108739A TW461109B (en) 1999-05-17 1999-05-27 Method for manufacturing a silicon bipolar power high frequency transistor and power transistor device
CA002373752A CA2373752A1 (en) 1999-05-17 2000-05-12 Improved rf power transistor
JP2000619032A JP2003500836A (ja) 1999-05-17 2000-05-12 改良型高周波パワー・トランジスタ
PCT/SE2000/000943 WO2000070681A1 (en) 1999-05-17 2000-05-12 Improved rf power transistor
KR1020017014395A KR20020000804A (ko) 1999-05-17 2000-05-12 실리콘 바이폴라 전력 고주파 트랜지스터 제조 방법 및 rf 전력 트랜지스터 장치
AU49650/00A AU4965000A (en) 1999-05-17 2000-05-12 Improved rf power transistor
CN00807672A CN1352806A (zh) 1999-05-17 2000-05-12 改进的射频功率晶体管
EP00931832A EP1186040A1 (en) 1999-05-17 2000-05-12 Improved rf power transistor
US09/572,399 US6340618B1 (en) 1999-05-17 2000-05-16 RF power transistor
US09/975,519 US6483170B2 (en) 1999-05-17 2001-10-10 RF power transistor
HK02107353.4A HK1046060A1 (zh) 1999-05-17 2002-10-08 改進的射頻功率晶體管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9901771A SE515836C3 (sv) 1999-05-17 1999-05-17 Förfarande för tillverkning av en bipolär högfrekvent kiseltransistor samt effekttransistoranordning

Publications (4)

Publication Number Publication Date
SE9901771D0 SE9901771D0 (sv) 1999-05-17
SE9901771L true SE9901771L (sv) 2000-11-18
SE515836C2 SE515836C2 (sv) 2001-10-15
SE515836C3 SE515836C3 (sv) 2001-11-06

Family

ID=20415606

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9901771A SE515836C3 (sv) 1999-05-17 1999-05-17 Förfarande för tillverkning av en bipolär högfrekvent kiseltransistor samt effekttransistoranordning

Country Status (11)

Country Link
US (2) US6340618B1 (sv)
EP (1) EP1186040A1 (sv)
JP (1) JP2003500836A (sv)
KR (1) KR20020000804A (sv)
CN (1) CN1352806A (sv)
AU (1) AU4965000A (sv)
CA (1) CA2373752A1 (sv)
HK (1) HK1046060A1 (sv)
SE (1) SE515836C3 (sv)
TW (1) TW461109B (sv)
WO (1) WO2000070681A1 (sv)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7226835B2 (en) * 2001-12-28 2007-06-05 Texas Instruments Incorporated Versatile system for optimizing current gain in bipolar transistor structures
US6841795B2 (en) * 2002-10-25 2005-01-11 The University Of Connecticut Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
US6974969B2 (en) 2003-01-13 2005-12-13 The University Of Connecticut P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer
US6946720B2 (en) * 2003-02-13 2005-09-20 Intersil Americas Inc. Bipolar transistor for an integrated circuit having variable value emitter ballast resistors
DE102004023193B4 (de) * 2004-05-11 2009-11-19 Infineon Technologies Ag Transistoranordnung und Herstellungsverfahren derselben
JP2007165492A (ja) * 2005-12-13 2007-06-28 Seiko Instruments Inc 半導体集積回路装置
CN101986434A (zh) * 2010-12-17 2011-03-16 中国电子科技集团公司第五十五研究所 一种横向双极晶体管及其制作方法
CN103730486A (zh) * 2013-10-18 2014-04-16 苏州贝克微电子有限公司 一种横向pnp功率晶体管
CN113161351B (zh) * 2021-03-23 2022-03-11 江苏新顺微电子股份有限公司 双极晶体管集成高压启动电阻的器件结构及制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3597640A (en) * 1969-04-10 1971-08-03 Nat Semiconductor Corp Short circuit protection means for semiconductive circuit apparatus
DE3382183D1 (de) * 1982-12-23 1991-04-04 Sumitomo Electric Industries Monolithische integrierte mikrowellenschaltung und verfahren zum auswaehlen derselben.
US5329156A (en) * 1992-12-22 1994-07-12 Spectrian, Inc. Feed bus for RF power transistors
US5414296A (en) * 1992-12-22 1995-05-09 Spectrian, Inc. Venetian blind cell layout for RF power transistor
MY115336A (en) 1994-02-18 2003-05-31 Ericsson Telefon Ab L M Electromigration resistant metallization structures and process for microcircuit interconnections with rf-reactively sputtered titanium tungsten and gold
US5684326A (en) * 1995-02-24 1997-11-04 Telefonaktiebolaget L.M. Ericsson Emitter ballast bypass for radio frequency power transistors
EP0810503B1 (en) * 1996-05-14 2001-12-19 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno An integrated circuit with a device having a predetermined reverse conduction threshold and a thermal compensation device with Vbe multipliers

Also Published As

Publication number Publication date
SE9901771D0 (sv) 1999-05-17
US6483170B2 (en) 2002-11-19
SE515836C3 (sv) 2001-11-06
US6340618B1 (en) 2002-01-22
CA2373752A1 (en) 2000-11-23
CN1352806A (zh) 2002-06-05
EP1186040A1 (en) 2002-03-13
JP2003500836A (ja) 2003-01-07
US20020036325A1 (en) 2002-03-28
TW461109B (en) 2001-10-21
WO2000070681A1 (en) 2000-11-23
SE515836C2 (sv) 2001-10-15
AU4965000A (en) 2000-12-05
HK1046060A1 (zh) 2002-12-20
KR20020000804A (ko) 2002-01-05

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