SE9601178D0 - A field controlled semiconductor device of SiC and a method for production thereof - Google Patents

A field controlled semiconductor device of SiC and a method for production thereof

Info

Publication number
SE9601178D0
SE9601178D0 SE9601178A SE9601178A SE9601178D0 SE 9601178 D0 SE9601178 D0 SE 9601178D0 SE 9601178 A SE9601178 A SE 9601178A SE 9601178 A SE9601178 A SE 9601178A SE 9601178 D0 SE9601178 D0 SE 9601178D0
Authority
SE
Sweden
Prior art keywords
layer
region layer
semiconductor device
doped
sic
Prior art date
Application number
SE9601178A
Other languages
English (en)
Swedish (sv)
Inventor
Mietek Bakowski
Christopher Harris
Ulf Gustafsson
Mats Andersson
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9601178A priority Critical patent/SE9601178D0/xx
Publication of SE9601178D0 publication Critical patent/SE9601178D0/xx
Priority to EP97915795A priority patent/EP0958609B1/fr
Priority to JP53430897A priority patent/JP4708512B2/ja
Priority to PCT/SE1997/000448 priority patent/WO1997036313A2/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
SE9601178A 1996-03-27 1996-03-27 A field controlled semiconductor device of SiC and a method for production thereof SE9601178D0 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE9601178A SE9601178D0 (sv) 1996-03-27 1996-03-27 A field controlled semiconductor device of SiC and a method for production thereof
EP97915795A EP0958609B1 (fr) 1996-03-27 1997-03-18 DISPOSITIF A SEMI-CONDUCTEUR A EFFET DE CHAMP EN SiC ET SON PROCEDE DE FABRICATION
JP53430897A JP4708512B2 (ja) 1996-03-27 1997-03-18 ＳｉＣの電界制御型半導体デバイスおよびその生産方法
PCT/SE1997/000448 WO1997036313A2 (fr) 1996-03-27 1997-03-18 DISPOSITIF A SEMI-CONDUCTEUR A EFFET DE CHAMP EN SiC ET SON PROCEDE DE FABRICATION

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9601178A SE9601178D0 (sv) 1996-03-27 1996-03-27 A field controlled semiconductor device of SiC and a method for production thereof

Publications (1)

Publication Number Publication Date
SE9601178D0 true SE9601178D0 (sv) 1996-03-27

Family

ID=20401971

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9601178A SE9601178D0 (sv) 1996-03-27 1996-03-27 A field controlled semiconductor device of SiC and a method for production thereof

Country Status (4)

Country Link
EP (1) EP0958609B1 (fr)
JP (1) JP4708512B2 (fr)
SE (1) SE9601178D0 (fr)
WO (1) WO1997036313A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9900358D0 (sv) * 1999-02-03 1999-02-03 Ind Mikroelektronikcentrum Ab A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor
KR100629020B1 (ko) * 1999-02-03 2006-09-27 인트린직 쎄미컨덕터 에이비 ＳｉＣ 측면 전계효과 트랜지스터, 그 제조 방법 및 상기 트랜지스터의 사용 방법
KR101007478B1 (ko) 2006-02-07 2011-01-12 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법
JP4412335B2 (ja) 2007-02-23 2010-02-10 株式会社デンソー 炭化珪素半導体装置の製造方法
US8421148B2 (en) 2007-09-14 2013-04-16 Cree, Inc. Grid-UMOSFET with electric field shielding of gate oxide
US8084813B2 (en) 2007-12-03 2011-12-27 Cree, Inc. Short gate high power MOSFET and method of manufacture

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4454523A (en) * 1981-03-30 1984-06-12 Siliconix Incorporated High voltage field effect transistor
JPS59132671A (ja) * 1983-01-19 1984-07-30 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
JP3471823B2 (ja) 1992-01-16 2003-12-02 富士電機株式会社 絶縁ゲート型半導体装置およびその製造方法
US5396087A (en) 1992-12-14 1995-03-07 North Carolina State University Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5543637A (en) * 1994-11-14 1996-08-06 North Carolina State University Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
JP3158973B2 (ja) * 1995-07-20 2001-04-23 富士電機株式会社 炭化けい素縦型ｆｅｔ

Also Published As

Publication number Publication date
EP0958609B1 (fr) 2011-11-16
EP0958609A2 (fr) 1999-11-24
JP4708512B2 (ja) 2011-06-22
JP2000507394A (ja) 2000-06-13
WO1997036313A3 (fr) 1997-11-20
WO1997036313A2 (fr) 1997-10-02

Similar Documents

Publication Publication Date Title
GB0107408D0 (en) Field effect transistor structure and method of manufacture
ATE225568T1 (de) Leistung-mosfet aus siliziumkarbid
EP0335750A3 (fr) MOSFET vertical de puissance ayant une haute tension de claquage et une grande vitesse de commutation
WO2002041404A3 (fr) Transistors a effet de champ comportant une tranchee et une grille et leur fabrication
EP1267415A3 (fr) Dispositif semi-conducteur de puissance ayant une région de type RESURF
SE9602881D0 (sv) Halvledarkomponent för högspänning
EP0671769A3 (fr) Transistor à effet de champ à grille isolée
KR970013429A (ko) 높은 브리크다운 전압을 갖는 탄화실리콘 트랜지스터
WO2003021685A1 (fr) Dispositif semi-conducteur et son procede de production
EP1284496A4 (fr) Transistor a effet de champ a jonction et procede de fabrication correspondant
TW333676B (en) The thin-film transistor & its producing method and liquid crystal display device
SE9900358D0 (sv) A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor
DE69841384D1 (de) Leistungshalbleiteranordnung mit halbisolierendem Substrat
SE9601178D0 (sv) A field controlled semiconductor device of SiC and a method for production thereof
EP0848425A3 (fr) Dispositif semi-conducteur comprenant des moyens de protection
WO1997036316A3 (fr) DISPOSITIF A SEMI-CONDUCTEUR A EFFET DE CHAMP EN SiC ET SON PROCEDE DE FABRICATION
EP0802567A3 (fr) Dispositif semi-conducteur et procédé de fabrication
EP0239250A3 (fr) Transistor MOS à canal court
HK1042378B (zh) 碳化硅橫向場效應晶體管和製造方法及其使用
SE9601173D0 (sv) A field effect transistor of SiC and a method for production thereof
KR950021286A (ko) 반도체 장치의 입력패드 및 이의 형성방법
SE9601177D0 (sv) Transistor having a vertical channel
SE9601172D0 (sv) Insulated gate bipolar transistor having a trench and a method for procuction thereof
JPS56165356A (en) Mos semiconductor device
KR0120542B1 (en) Semiconductor device and method thereof