SE9300210D0 - Halvledaranordning i ett tunt aktivt skikt med hoeg genombrottsspaenning - Google Patents

Halvledaranordning i ett tunt aktivt skikt med hoeg genombrottsspaenning

Info

Publication number
SE9300210D0
SE9300210D0 SE9300210A SE9300210A SE9300210D0 SE 9300210 D0 SE9300210 D0 SE 9300210D0 SE 9300210 A SE9300210 A SE 9300210A SE 9300210 A SE9300210 A SE 9300210A SE 9300210 D0 SE9300210 D0 SE 9300210D0
Authority
SE
Sweden
Prior art keywords
doped
region
bip1
jfet1
heavily
Prior art date
Application number
SE9300210A
Other languages
English (en)
Other versions
SE9300210L (sv
SE500814C2 (sv
Inventor
Andrej Litwin
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9300210A priority Critical patent/SE500814C2/sv
Publication of SE9300210D0 publication Critical patent/SE9300210D0/sv
Priority to DE69411450T priority patent/DE69411450T2/de
Priority to EP94850004A priority patent/EP0623951B1/en
Priority to MYPI94000095A priority patent/MY111643A/en
Priority to JP6005896A priority patent/JPH06349849A/ja
Priority to CN94100698.0A priority patent/CN1092558A/zh
Priority to KR1019940001282A priority patent/KR100278424B1/ko
Publication of SE9300210L publication Critical patent/SE9300210L/sv
Publication of SE500814C2 publication Critical patent/SE500814C2/sv
Priority to US08/669,848 priority patent/US5659190A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
SE9300210A 1993-01-25 1993-01-25 Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning SE500814C2 (sv)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SE9300210A SE500814C2 (sv) 1993-01-25 1993-01-25 Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
DE69411450T DE69411450T2 (de) 1993-01-25 1994-01-12 Halbleiteranordnung in einer dünnen aktiven Schicht mit hoher Durchbruchspannung
EP94850004A EP0623951B1 (en) 1993-01-25 1994-01-12 A semiconductor device in a thin active layer with high breakdown voltage
MYPI94000095A MY111643A (en) 1993-01-25 1994-01-14 A semiconductor device in a thin active layer with high breakdown voltage
JP6005896A JPH06349849A (ja) 1993-01-25 1994-01-24 高耐圧薄膜半導体装置
CN94100698.0A CN1092558A (zh) 1993-01-25 1994-01-25 一种击穿电压高的薄有源层半导体器件
KR1019940001282A KR100278424B1 (ko) 1993-01-25 1994-01-25 높은 항복 전압을 지닌 얇은 능동층의 반도체 장치
US08/669,848 US5659190A (en) 1993-01-25 1996-06-26 Semiconductor device in a thin active layer with high breakdown voltage

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9300210A SE500814C2 (sv) 1993-01-25 1993-01-25 Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
US08/669,848 US5659190A (en) 1993-01-25 1996-06-26 Semiconductor device in a thin active layer with high breakdown voltage

Publications (3)

Publication Number Publication Date
SE9300210D0 true SE9300210D0 (sv) 1993-01-25
SE9300210L SE9300210L (sv) 1994-07-26
SE500814C2 SE500814C2 (sv) 1994-09-12

Family

ID=26661632

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9300210A SE500814C2 (sv) 1993-01-25 1993-01-25 Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning

Country Status (5)

Country Link
US (1) US5659190A (sv)
EP (1) EP0623951B1 (sv)
JP (1) JPH06349849A (sv)
CN (1) CN1092558A (sv)
SE (1) SE500814C2 (sv)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283414A (ja) * 1994-04-05 1995-10-27 Toshiba Corp Ｍｏｓ型半導体装置
DE4418206C2 (de) * 1994-05-25 1999-01-14 Siemens Ag CMOS-kompatibler Bipolartransistor und Herstellungsverfahren desselben
SE513512C2 (sv) * 1994-10-31 2000-09-25 Ericsson Telefon Ab L M Halvledaranordning med ett flytande kollektorområde
US6043555A (en) * 1995-04-13 2000-03-28 Telefonaktiebolget Lm Ericsson Bipolar silicon-on-insulator transistor with increased breakdown voltage
US5977569A (en) * 1996-09-24 1999-11-02 Allen-Bradley Company, Llc Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability
US5852559A (en) * 1996-09-24 1998-12-22 Allen Bradley Company, Llc Power application circuits utilizing bidirectional insulated gate bipolar transistor
SE512661C2 (sv) * 1996-11-13 2000-04-17 Ericsson Telefon Ab L M Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma
JP3709668B2 (ja) * 1997-09-02 2005-10-26 ソニー株式会社 半導体装置とその製造方法
DE19800715A1 (de) * 1998-01-12 1999-07-15 Bremicker Auto Elektrik Elektrisches Halbleiterelement sowie Verfahren zur Herstellung eines Halbleiterelementes
US6313482B1 (en) 1999-05-17 2001-11-06 North Carolina State University Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
US6291304B1 (en) 1999-09-15 2001-09-18 Taiwan Semiconductor Manufacturing Company Method of fabricating a high voltage transistor using P+ buried layer
US6245609B1 (en) 1999-09-27 2001-06-12 Taiwan Semiconductor Manufacturing Company High voltage transistor using P+ buried layer
US7642566B2 (en) * 2006-06-12 2010-01-05 Dsm Solutions, Inc. Scalable process and structure of JFET for small and decreasing line widths
EP2058854B1 (en) * 2007-11-07 2014-12-03 Acreo Swedish ICT AB A semiconductor device
JP6459416B2 (ja) * 2014-11-12 2019-01-30 富士電機株式会社 半導体装置
US9653455B1 (en) * 2015-11-10 2017-05-16 Analog Devices Global FET—bipolar transistor combination
US9935628B2 (en) 2015-11-10 2018-04-03 Analog Devices Global FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination
GB201604796D0 (en) 2015-11-10 2016-05-04 Analog Devices Global A combined isolator and power switch
US9698594B2 (en) 2015-11-10 2017-07-04 Analog Devices Global Overvoltage protection device, and a galvanic isolator in combination with an overvoltage protection device
TWI747235B (zh) * 2020-04-16 2021-11-21 世界先進積體電路股份有限公司 高壓半導體裝置
US11121212B1 (en) 2020-05-28 2021-09-14 Vanguard International Semiconductor Corporation High-voltage semiconductor device
CN113823678A (zh) * 2021-09-03 2021-12-21 无锡市晶源微电子有限公司 一种高压npn器件

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US3404295A (en) * 1964-11-30 1968-10-01 Motorola Inc High frequency and voltage transistor with added region for punch-through protection
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
US4587545A (en) * 1978-12-20 1986-05-06 At&T Bell Laboratories High voltage dielectrically isolated remote gate solid-state switch
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
US4587656A (en) * 1979-12-28 1986-05-06 At&T Bell Laboratories High voltage solid-state switch
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.
US4868624A (en) * 1980-05-09 1989-09-19 Regents Of The University Of Minnesota Channel collector transistor
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
NL8200464A (nl) * 1982-02-08 1983-09-01 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
US4605948A (en) * 1984-08-02 1986-08-12 Rca Corporation Semiconductor structure for electric field distribution
US5001075A (en) * 1989-04-03 1991-03-19 Motorola Fabrication of dielectrically isolated semiconductor device
JP2825322B2 (ja) * 1989-09-13 1998-11-18 株式会社東芝 誘電体分離構造を有する半導体基板の製造方法
JP2654268B2 (ja) * 1991-05-13 1997-09-17 株式会社東芝 半導体装置の使用方法

Also Published As

Publication number Publication date
SE9300210L (sv) 1994-07-26
US5659190A (en) 1997-08-19
EP0623951A1 (en) 1994-11-09
JPH06349849A (ja) 1994-12-22
SE500814C2 (sv) 1994-09-12
CN1092558A (zh) 1994-09-21
EP0623951B1 (en) 1998-07-08

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