SE9002030L - METHOD FOR WRITING DATA WHEN TESTING MEMORY DEVICE AND CIRCUIT FOR TESTING MEMORY DEVICE - Google Patents

METHOD FOR WRITING DATA WHEN TESTING MEMORY DEVICE AND CIRCUIT FOR TESTING MEMORY DEVICE

Info

Publication number
SE9002030L
SE9002030L SE9002030A SE9002030A SE9002030L SE 9002030 L SE9002030 L SE 9002030L SE 9002030 A SE9002030 A SE 9002030A SE 9002030 A SE9002030 A SE 9002030A SE 9002030 L SE9002030 L SE 9002030L
Authority
SE
Sweden
Prior art keywords
memory device
testing memory
circuit
data
testing
Prior art date
Application number
SE9002030A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE512452C2 (en
SE9002030D0 (en
Inventor
Hoon Choi
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SE9002030D0 publication Critical patent/SE9002030D0/en
Publication of SE9002030L publication Critical patent/SE9002030L/en
Publication of SE512452C2 publication Critical patent/SE512452C2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/36—Data generation devices, e.g. data inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

A circuit for testing a memory device has a data writing means (M1 to M4), a data checking means (3), and a control circuit (1). A method for writing data and testing the memory device without using input/output lines (I/O) comprises the steps of generating a voltage difference between a pair of bit lines B/L and B/L using switches (M1 to M4) and a sense amplifier (2), as appropriate, and directly storing the data in a capacitor C1 of a memory cell (5). Each memory cell (5) can be checked by sensing (TQ, M8) the potential at a point H, the latter being influenced by switches (M5, M6) controlled by sensed (2) voltages of the bit lines and by control signals (E, F) from the control circuit (1). <IMAGE>
SE9002030A 1989-06-10 1990-06-06 Method for writing data when testing memory device and circuit for testing memory device SE512452C2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890008002A KR920001080B1 (en) 1989-06-10 1989-06-10 Method writing data and test circuit in memory material

Publications (3)

Publication Number Publication Date
SE9002030D0 SE9002030D0 (en) 1990-06-06
SE9002030L true SE9002030L (en) 1990-12-11
SE512452C2 SE512452C2 (en) 2000-03-20

Family

ID=19286971

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9002030A SE512452C2 (en) 1989-06-10 1990-06-06 Method for writing data when testing memory device and circuit for testing memory device

Country Status (10)

Country Link
JP (1) JP3101953B2 (en)
KR (1) KR920001080B1 (en)
CN (1) CN1019243B (en)
DE (1) DE4003132A1 (en)
FR (1) FR2648266B1 (en)
GB (1) GB2232496B (en)
IT (1) IT1248750B (en)
NL (1) NL194812C (en)
RU (1) RU2084972C1 (en)
SE (1) SE512452C2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128899A (en) * 1991-10-29 1993-05-25 Mitsubishi Electric Corp Semiconductor memory
AU2003207364A1 (en) * 2002-02-26 2003-09-09 Koninklijke Philips Electronics N.V. Non-volatile memory test structure and method
CN107430881B (en) * 2015-03-09 2021-03-23 东芝存储器株式会社 Semiconductor memory device with a plurality of memory cells

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59185097A (en) * 1983-04-04 1984-10-20 Oki Electric Ind Co Ltd Memory device with self-diagnostic function
JPS62229599A (en) * 1986-03-31 1987-10-08 Toshiba Corp Nonvolatile semiconductor memory device
EP0253161B1 (en) * 1986-06-25 1991-10-16 Nec Corporation Testing circuit for random access memory device
KR910001534B1 (en) * 1986-09-08 1991-03-15 가부시키가이샤 도시바 Semiconductor memory device
JPS6446300A (en) * 1987-08-17 1989-02-20 Nippon Telegraph & Telephone Semiconductor memory
JPH01113999A (en) * 1987-10-28 1989-05-02 Toshiba Corp Stress test circuit for non-volatile memory

Also Published As

Publication number Publication date
JP3101953B2 (en) 2000-10-23
GB2232496A (en) 1990-12-12
CN1048463A (en) 1991-01-09
GB2232496B (en) 1993-06-02
SE512452C2 (en) 2000-03-20
KR910001779A (en) 1991-01-31
GB9002396D0 (en) 1990-04-04
FR2648266A1 (en) 1990-12-14
IT9020566A0 (en) 1990-06-07
DE4003132C2 (en) 1992-06-04
DE4003132A1 (en) 1990-12-20
CN1019243B (en) 1992-11-25
FR2648266B1 (en) 1993-12-24
NL194812B (en) 2002-11-01
SE9002030D0 (en) 1990-06-06
IT1248750B (en) 1995-01-27
KR920001080B1 (en) 1992-02-01
IT9020566A1 (en) 1991-12-07
JPH0312100A (en) 1991-01-21
NL9000261A (en) 1991-01-02
RU2084972C1 (en) 1997-07-20
NL194812C (en) 2003-03-04

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