NL194812B - Circuit for testing a memory device. - Google Patents

Circuit for testing a memory device.

Info

Publication number
NL194812B
NL194812B NL9000261A NL9000261A NL194812B NL 194812 B NL194812 B NL 194812B NL 9000261 A NL9000261 A NL 9000261A NL 9000261 A NL9000261 A NL 9000261A NL 194812 B NL194812 B NL 194812B
Authority
NL
Netherlands
Prior art keywords
testing
circuit
memory device
memory
Prior art date
Application number
NL9000261A
Other languages
Dutch (nl)
Other versions
NL9000261A (en
NL194812C (en
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of NL9000261A publication Critical patent/NL9000261A/en
Publication of NL194812B publication Critical patent/NL194812B/en
Application granted granted Critical
Publication of NL194812C publication Critical patent/NL194812C/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4094Bit-line management or control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30Accessing single arrays
    • G11C29/34Accessing multiple bits simultaneously
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/36Data generation devices, e.g. data inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
NL9000261A 1989-06-10 1990-02-02 Circuit for testing a memory device. NL194812C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR890008002 1989-06-10
KR1019890008002A KR920001080B1 (en) 1989-06-10 1989-06-10 Method writing data and test circuit in memory material

Publications (3)

Publication Number Publication Date
NL9000261A NL9000261A (en) 1991-01-02
NL194812B true NL194812B (en) 2002-11-01
NL194812C NL194812C (en) 2003-03-04

Family

ID=19286971

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9000261A NL194812C (en) 1989-06-10 1990-02-02 Circuit for testing a memory device.

Country Status (10)

Country Link
JP (1) JP3101953B2 (en)
KR (1) KR920001080B1 (en)
CN (1) CN1019243B (en)
DE (1) DE4003132A1 (en)
FR (1) FR2648266B1 (en)
GB (1) GB2232496B (en)
IT (1) IT1248750B (en)
NL (1) NL194812C (en)
RU (1) RU2084972C1 (en)
SE (1) SE512452C2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128899A (en) * 1991-10-29 1993-05-25 Mitsubishi Electric Corp Semiconductor memory
US6950356B2 (en) * 2002-02-26 2005-09-27 Koninklijke Philips Electronics N.V. Non-volatile memory test structure and method
RU2681344C1 (en) * 2015-03-09 2019-03-06 Тосиба Мемори Корпорейшн Semiconductor storage device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59185097A (en) * 1983-04-04 1984-10-20 Oki Electric Ind Co Ltd Memory device with self-diagnostic function
JPS62229599A (en) * 1986-03-31 1987-10-08 Toshiba Corp Nonvolatile semiconductor memory device
EP0253161B1 (en) * 1986-06-25 1991-10-16 Nec Corporation Testing circuit for random access memory device
KR910001534B1 (en) * 1986-09-08 1991-03-15 가부시키가이샤 도시바 Semiconductor memory device
JPS6446300A (en) * 1987-08-17 1989-02-20 Nippon Telegraph & Telephone Semiconductor memory
JPH01113999A (en) * 1987-10-28 1989-05-02 Toshiba Corp Stress test circuit for non-volatile memory

Also Published As

Publication number Publication date
SE9002030L (en) 1990-12-11
NL9000261A (en) 1991-01-02
FR2648266B1 (en) 1993-12-24
JP3101953B2 (en) 2000-10-23
GB2232496B (en) 1993-06-02
NL194812C (en) 2003-03-04
GB2232496A (en) 1990-12-12
IT9020566A0 (en) 1990-06-07
GB9002396D0 (en) 1990-04-04
KR910001779A (en) 1991-01-31
CN1048463A (en) 1991-01-09
IT9020566A1 (en) 1991-12-07
IT1248750B (en) 1995-01-27
FR2648266A1 (en) 1990-12-14
DE4003132C2 (en) 1992-06-04
SE512452C2 (en) 2000-03-20
KR920001080B1 (en) 1992-02-01
JPH0312100A (en) 1991-01-21
DE4003132A1 (en) 1990-12-20
CN1019243B (en) 1992-11-25
RU2084972C1 (en) 1997-07-20
SE9002030D0 (en) 1990-06-06

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V4 Discontinued because of reaching the maximum lifetime of a patent

Effective date: 20100202