SE8903761L - Halvledarswitch - Google Patents

Halvledarswitch

Info

Publication number
SE8903761L
SE8903761L SE8903761A SE8903761A SE8903761L SE 8903761 L SE8903761 L SE 8903761L SE 8903761 A SE8903761 A SE 8903761A SE 8903761 A SE8903761 A SE 8903761A SE 8903761 L SE8903761 L SE 8903761L
Authority
SE
Sweden
Prior art keywords
type
transistor
transistors
mutually
regions
Prior art date
Application number
SE8903761A
Other languages
Unknown language ( )
English (en)
Other versions
SE464949B (sv
SE8903761D0 (sv
Inventor
P Svedberg
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to SE8903761A priority Critical patent/SE464949B/sv
Publication of SE8903761D0 publication Critical patent/SE8903761D0/sv
Priority to CA 2069911 priority patent/CA2069911A1/en
Priority to PCT/SE1990/000678 priority patent/WO1991007780A1/en
Priority to EP19900916841 priority patent/EP0540516A1/en
Priority to JP51546390A priority patent/JPH05501479A/ja
Publication of SE8903761L publication Critical patent/SE8903761L/sv
Publication of SE464949B publication Critical patent/SE464949B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
SE8903761A 1989-11-09 1989-11-09 Halvledarswitch SE464949B (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE8903761A SE464949B (sv) 1989-11-09 1989-11-09 Halvledarswitch
CA 2069911 CA2069911A1 (en) 1989-11-09 1990-10-19 Semiconductor device
PCT/SE1990/000678 WO1991007780A1 (en) 1989-11-09 1990-10-19 Semiconductor switch
EP19900916841 EP0540516A1 (en) 1989-11-09 1990-10-19 Semiconductor switch
JP51546390A JPH05501479A (ja) 1989-11-09 1990-10-19 半導体スイッチ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8903761A SE464949B (sv) 1989-11-09 1989-11-09 Halvledarswitch

Publications (3)

Publication Number Publication Date
SE8903761D0 SE8903761D0 (sv) 1989-11-09
SE8903761L true SE8903761L (sv) 1991-05-10
SE464949B SE464949B (sv) 1991-07-01

Family

ID=20377432

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8903761A SE464949B (sv) 1989-11-09 1989-11-09 Halvledarswitch

Country Status (5)

Country Link
EP (1) EP0540516A1 (sv)
JP (1) JPH05501479A (sv)
CA (1) CA2069911A1 (sv)
SE (1) SE464949B (sv)
WO (1) WO1991007780A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5684320A (en) * 1991-01-09 1997-11-04 Fujitsu Limited Semiconductor device having transistor pair
JP3135939B2 (ja) * 1991-06-20 2001-02-19 富士通株式会社 Ｈｅｍｔ型半導体装置
SE513283C2 (sv) * 1996-07-26 2000-08-14 Ericsson Telefon Ab L M MOS-transistorstruktur med utsträckt driftregion

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577161A (en) * 1980-06-16 1982-01-14 Toshiba Corp Mos semiconductor device
US4593300A (en) * 1984-10-31 1986-06-03 The Regents Of The University Of Minnesota Folded logic gate
SE460448B (sv) * 1988-02-29 1989-10-09 Asea Brown Boveri Dubbelriktad mos-switch

Also Published As

Publication number Publication date
JPH05501479A (ja) 1993-03-18
EP0540516A1 (en) 1993-05-12
SE464949B (sv) 1991-07-01
WO1991007780A1 (en) 1991-05-30
CA2069911A1 (en) 1991-05-10
SE8903761D0 (sv) 1989-11-09

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