CA2069911A1 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- CA2069911A1 CA2069911A1 CA 2069911 CA2069911A CA2069911A1 CA 2069911 A1 CA2069911 A1 CA 2069911A1 CA 2069911 CA2069911 CA 2069911 CA 2069911 A CA2069911 A CA 2069911A CA 2069911 A1 CA2069911 A1 CA 2069911A1
- Authority
- CA
- Canada
- Prior art keywords
- transistor
- transistors
- source
- semiconductor device
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 230000005669 field effect Effects 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 239000002800 charge carrier Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000013642 negative control Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8903761-8 | 1989-11-09 | ||
| SE8903761A SE464949B (sv) | 1989-11-09 | 1989-11-09 | Halvledarswitch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2069911A1 true CA2069911A1 (en) | 1991-05-10 |
Family
ID=20377432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2069911 Abandoned CA2069911A1 (en) | 1989-11-09 | 1990-10-19 | Semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0540516A1 (sv) |
| JP (1) | JPH05501479A (sv) |
| CA (1) | CA2069911A1 (sv) |
| SE (1) | SE464949B (sv) |
| WO (1) | WO1991007780A1 (sv) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5684320A (en) * | 1991-01-09 | 1997-11-04 | Fujitsu Limited | Semiconductor device having transistor pair |
| JP3135939B2 (ja) * | 1991-06-20 | 2001-02-19 | 富士通株式会社 | Ｈｅｍｔ型半導体装置 |
| SE513283C2 (sv) * | 1996-07-26 | 2000-08-14 | Ericsson Telefon Ab L M | MOS-transistorstruktur med utsträckt driftregion |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577161A (en) * | 1980-06-16 | 1982-01-14 | Toshiba Corp | Mos semiconductor device |
| US4593300A (en) * | 1984-10-31 | 1986-06-03 | The Regents Of The University Of Minnesota | Folded logic gate |
| SE460448B (sv) * | 1988-02-29 | 1989-10-09 | Asea Brown Boveri | Dubbelriktad mos-switch |
-
1989
- 1989-11-09 SE SE8903761A patent/SE464949B/sv not_active IP Right Cessation
-
1990
- 1990-10-19 CA CA 2069911 patent/CA2069911A1/en not_active Abandoned
- 1990-10-19 JP JP51546390A patent/JPH05501479A/ja active Pending
- 1990-10-19 EP EP19900916841 patent/EP0540516A1/en not_active Withdrawn
- 1990-10-19 WO PCT/SE1990/000678 patent/WO1991007780A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| SE8903761L (sv) | 1991-05-10 |
| SE464949B (sv) | 1991-07-01 |
| JPH05501479A (ja) | 1993-03-18 |
| EP0540516A1 (en) | 1993-05-12 |
| SE8903761D0 (sv) | 1989-11-09 |
| WO1991007780A1 (en) | 1991-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100311589B1 (ko) | 고 전압용 반도체 부품 | |
| CA1088215A (en) | Fabrication of power field effect transistors and the resulting structures | |
| US4590509A (en) | MIS high-voltage element with high-resistivity gate and field-plate | |
| US5416354A (en) | Inverted epitaxial process semiconductor devices | |
| EP0091831B1 (en) | Mobility-modulation field effect transistor | |
| GB2303965A (en) | Reverse blocking IGBT | |
| EP0247660B1 (en) | Semiconductor device comprising a bipolar transistor and field-effect transistors | |
| CA1145058A (en) | Triac having a multi-layer semiconductor body | |
| US5291040A (en) | Deactivatable thyristor with turn-off current path | |
| US4296428A (en) | Merged field effect transistor circuit and fabrication process | |
| US5240865A (en) | Method of forming a thyristor on an SOI substrate | |
| KR0152345B1 (ko) | 혼성 쇼트키 주입 전계 효과 트랜지스터 | |
| JP2002511657A (ja) | 高電圧半導体構成素子のためのユニバーサル半導体ウェハ | |
| US4914045A (en) | Method of fabricating packaged TRIAC and trigger switch | |
| CA2069911A1 (en) | Semiconductor device | |
| US3742318A (en) | Field effect semiconductor device | |
| US3564355A (en) | Semiconductor device employing a p-n junction between induced p- and n- regions | |
| US4109272A (en) | Lateral bipolar transistor | |
| US3701198A (en) | Monolithic integrated circuit structures and methods of making same | |
| US5744851A (en) | Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions | |
| US3811075A (en) | Magneto-sensitive device having pn junction | |
| US20070114565A1 (en) | Integrated field-effect transistor-thyristor device | |
| US3614555A (en) | Monolithic integrated circuit structure | |
| EP0201329B1 (en) | A field effect transistor | |
| KR0136384B1 (ko) | 반도체 소자 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |