SE8703182L - REACTION CELL FOR EPITAXIAL GROWTH OF SEMICONDUCTOR MATERIAL - Google Patents

REACTION CELL FOR EPITAXIAL GROWTH OF SEMICONDUCTOR MATERIAL

Info

Publication number
SE8703182L
SE8703182L SE8703182A SE8703182A SE8703182L SE 8703182 L SE8703182 L SE 8703182L SE 8703182 A SE8703182 A SE 8703182A SE 8703182 A SE8703182 A SE 8703182A SE 8703182 L SE8703182 L SE 8703182L
Authority
SE
Sweden
Prior art keywords
semiconductor material
epitaxial growth
reaction cell
cell
susceptor
Prior art date
Application number
SE8703182A
Other languages
Swedish (sv)
Other versions
SE458567B (en
SE8703182D0 (en
Inventor
L-Aa Ledebo
L Samuelson
Original Assignee
Epiquip Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epiquip Ab filed Critical Epiquip Ab
Priority to SE8703182A priority Critical patent/SE458567B/en
Publication of SE8703182D0 publication Critical patent/SE8703182D0/en
Publication of SE8703182L publication Critical patent/SE8703182L/en
Publication of SE458567B publication Critical patent/SE458567B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

The substrate and susceptor are contained in a cell mounted in a tubular reaction chamber. It has an inlet and an outlet for gases. There is a device for heating the chamber. The cell is rectangular in cross-section. The base of which has an opening to permit the location of the susceptor, and communication with the outer chamber.
SE8703182A 1987-08-17 1987-08-17 Reaction cell for epitaxial growth of semiconductor material SE458567B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SE8703182A SE458567B (en) 1987-08-17 1987-08-17 Reaction cell for epitaxial growth of semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8703182A SE458567B (en) 1987-08-17 1987-08-17 Reaction cell for epitaxial growth of semiconductor material

Publications (3)

Publication Number Publication Date
SE8703182D0 SE8703182D0 (en) 1987-08-17
SE8703182L true SE8703182L (en) 1989-02-18
SE458567B SE458567B (en) 1989-04-10

Family

ID=20369302

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8703182A SE458567B (en) 1987-08-17 1987-08-17 Reaction cell for epitaxial growth of semiconductor material

Country Status (1)

Country Link
SE (1) SE458567B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9500327D0 (en) * 1995-01-31 1995-01-31 Abb Research Ltd Device for epitaxially growing SiC by CVD

Also Published As

Publication number Publication date
SE458567B (en) 1989-04-10
SE8703182D0 (en) 1987-08-17

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