JPS57114659A - Vacuum cvd device - Google Patents
Vacuum cvd deviceInfo
- Publication number
- JPS57114659A JPS57114659A JP18813980A JP18813980A JPS57114659A JP S57114659 A JPS57114659 A JP S57114659A JP 18813980 A JP18813980 A JP 18813980A JP 18813980 A JP18813980 A JP 18813980A JP S57114659 A JPS57114659 A JP S57114659A
- Authority
- JP
- Japan
- Prior art keywords
- gases
- vaccum
- reaction chamber
- cvd
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To supply thoroughly mixed gases and improve film quality by providing a part of mixing >=2 kinds of raw material gases or carrier gases in a reaction chamber in a vacuum chemical vapor growth (vaccum CVD) device. CONSTITUTION:This mixing device 23 is mounted by means of screw holes 31 to the flange 21 of the vaccum CVD device so as to close hermetically the reaction chamber together with the door 20 of the vaccum CVD device body by means of a flange 30. Raw material gases or carrier gases are introduced through gas lead-in ports 22, 32 directly into the device 23. These gases are introduced quickly into the device 23 put under vacuum, and create turbulent flow, by which they are mixed and the mixed gases are released through an outlet 33 into the reaction chamber. Since the device 23 is in a room temp. region of low temp., the amt. to be stuck with the product of reaction is slight and since it is possible to view the same, it can be easily removed and washed. hence, this device 23 is effective in improving the film quality and simplifying maintenance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18813980A JPS57114659A (en) | 1980-12-29 | 1980-12-29 | Vacuum cvd device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18813980A JPS57114659A (en) | 1980-12-29 | 1980-12-29 | Vacuum cvd device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57114659A true JPS57114659A (en) | 1982-07-16 |
Family
ID=16218418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18813980A Pending JPS57114659A (en) | 1980-12-29 | 1980-12-29 | Vacuum cvd device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57114659A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5143018A (en) * | 1987-12-18 | 1992-09-01 | The General Electric Company, P.L.C. | Apparatus for depositing uniform films by how-pressure chemical vapor deposition |
KR100756626B1 (en) * | 2000-10-28 | 2007-09-07 | 주성엔지니어링(주) | Gas mixing port and liquid reagent delivery system using the same |
-
1980
- 1980-12-29 JP JP18813980A patent/JPS57114659A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5143018A (en) * | 1987-12-18 | 1992-09-01 | The General Electric Company, P.L.C. | Apparatus for depositing uniform films by how-pressure chemical vapor deposition |
KR100756626B1 (en) * | 2000-10-28 | 2007-09-07 | 주성엔지니어링(주) | Gas mixing port and liquid reagent delivery system using the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU538152B2 (en) | Chemical vapour deposition apparatus and process | |
SG2993G (en) | An arrangement for the sterilizing of a travelling material web | |
HK1041029A1 (en) | Reaction chamber for an epitaxial reactor | |
GB1461506A (en) | Photochemical reactor | |
JPS57114659A (en) | Vacuum cvd device | |
JPS5766625A (en) | Manufacture of film | |
JPS55140233A (en) | Chemical gaseous-phase growing device | |
JPS5714736A (en) | Rapid, wet-type sample decomposing device | |
JPS5518077A (en) | Device for growing film under gas | |
JPS56166377A (en) | Plasma treating method of hollow body | |
JPS5718978A (en) | System for keeping interior of laboratory where dangerous material is handled at negative pressure | |
JPS57143186A (en) | Sealing means of compressor | |
JPS57121236A (en) | Plasma processing and device thereof | |
JPS54150332A (en) | Ultra fine granules evaporator | |
JPS5696842A (en) | Microwave plasma treating apparatus | |
JPS5722112A (en) | Preparation of noncrystalline sixc1-x | |
JPS5523085A (en) | Production of silicon film | |
JPS6487596A (en) | Diamond vapor synthesis device | |
JPS5458431A (en) | Speaker diaphragm and production of the same | |
JPS554928A (en) | Vertical type gaseous phase growth furnace | |
JPS55150235A (en) | Method and apparatus for growing film in reduced pressure vapor phase | |
SU1365720A1 (en) | Method and apparatus for producing titanium | |
SE8703182L (en) | REACTION CELL FOR EPITAXIAL GROWTH OF SEMICONDUCTOR MATERIAL | |
KR940704054A (en) | Heat Treatment Apparatus | |
JPS646620A (en) | High-frequency heater |