JPS57114659A - Vacuum cvd device - Google Patents

Vacuum cvd device

Info

Publication number
JPS57114659A
JPS57114659A JP18813980A JP18813980A JPS57114659A JP S57114659 A JPS57114659 A JP S57114659A JP 18813980 A JP18813980 A JP 18813980A JP 18813980 A JP18813980 A JP 18813980A JP S57114659 A JPS57114659 A JP S57114659A
Authority
JP
Japan
Prior art keywords
gases
vaccum
reaction chamber
cvd
mixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18813980A
Other languages
Japanese (ja)
Inventor
Yasuhide Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP18813980A priority Critical patent/JPS57114659A/en
Publication of JPS57114659A publication Critical patent/JPS57114659A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To supply thoroughly mixed gases and improve film quality by providing a part of mixing >=2 kinds of raw material gases or carrier gases in a reaction chamber in a vacuum chemical vapor growth (vaccum CVD) device. CONSTITUTION:This mixing device 23 is mounted by means of screw holes 31 to the flange 21 of the vaccum CVD device so as to close hermetically the reaction chamber together with the door 20 of the vaccum CVD device body by means of a flange 30. Raw material gases or carrier gases are introduced through gas lead-in ports 22, 32 directly into the device 23. These gases are introduced quickly into the device 23 put under vacuum, and create turbulent flow, by which they are mixed and the mixed gases are released through an outlet 33 into the reaction chamber. Since the device 23 is in a room temp. region of low temp., the amt. to be stuck with the product of reaction is slight and since it is possible to view the same, it can be easily removed and washed. hence, this device 23 is effective in improving the film quality and simplifying maintenance.
JP18813980A 1980-12-29 1980-12-29 Vacuum cvd device Pending JPS57114659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18813980A JPS57114659A (en) 1980-12-29 1980-12-29 Vacuum cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18813980A JPS57114659A (en) 1980-12-29 1980-12-29 Vacuum cvd device

Publications (1)

Publication Number Publication Date
JPS57114659A true JPS57114659A (en) 1982-07-16

Family

ID=16218418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18813980A Pending JPS57114659A (en) 1980-12-29 1980-12-29 Vacuum cvd device

Country Status (1)

Country Link
JP (1) JPS57114659A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5143018A (en) * 1987-12-18 1992-09-01 The General Electric Company, P.L.C. Apparatus for depositing uniform films by how-pressure chemical vapor deposition
KR100756626B1 (en) * 2000-10-28 2007-09-07 주성엔지니어링(주) Gas mixing port and liquid reagent delivery system using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5143018A (en) * 1987-12-18 1992-09-01 The General Electric Company, P.L.C. Apparatus for depositing uniform films by how-pressure chemical vapor deposition
KR100756626B1 (en) * 2000-10-28 2007-09-07 주성엔지니어링(주) Gas mixing port and liquid reagent delivery system using the same

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