JPS6477942A - Formation of protective film - Google Patents
Formation of protective filmInfo
- Publication number
- JPS6477942A JPS6477942A JP23586987A JP23586987A JPS6477942A JP S6477942 A JPS6477942 A JP S6477942A JP 23586987 A JP23586987 A JP 23586987A JP 23586987 A JP23586987 A JP 23586987A JP S6477942 A JPS6477942 A JP S6477942A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- raw material
- material gases
- heated
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To reduce interface level density, and to improve the C-V characteristics of a semiconductor device by forming an silicon nitride film onto the surface of an indium phosphide semiconductor through chemical vapor growth and thermally treating the whole at a temperature higher than the temperature of chemical vapor growth. CONSTITUTION:A sample base 22 is heated by a heater 21. An InP semiconductor sample 23 is placed onto the sample base 22. The inside of a reaction chamber 26 is evacuated, and the sample 23 is heated. The inside of the reaction chamber 26 is supplied with SiH4 and NH3 as raw material gases and N2 as a carrier gas from an introducing port 28, and a high frequency power 25 is turned ON and discharge is started. Consequently, the raw material gases are decomposed, and a passivation film composed of SiN is shaped and deposited onto the surface of the sample 23. When the film thickness of the passivation film reaches a desired value, the supply of the raw material gases is stopped, and the sample 23 is further heated while feeding only the carrier gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23586987A JPS6477942A (en) | 1987-09-18 | 1987-09-18 | Formation of protective film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23586987A JPS6477942A (en) | 1987-09-18 | 1987-09-18 | Formation of protective film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6477942A true JPS6477942A (en) | 1989-03-23 |
Family
ID=16992453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23586987A Pending JPS6477942A (en) | 1987-09-18 | 1987-09-18 | Formation of protective film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6477942A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS609180A (en) * | 1983-06-13 | 1985-01-18 | アメリカン・テレフオン・アンド・テレグラフ・カムパニ− | Method of producing semiconductor photodetector |
-
1987
- 1987-09-18 JP JP23586987A patent/JPS6477942A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS609180A (en) * | 1983-06-13 | 1985-01-18 | アメリカン・テレフオン・アンド・テレグラフ・カムパニ− | Method of producing semiconductor photodetector |
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