SE8603364L - Anti-bottningskrets for en integrerad pnp-transistor som har en intervenerande karakteristika vilken er definierbar i enlighet med en forutbestemd funktion - Google Patents

Anti-bottningskrets for en integrerad pnp-transistor som har en intervenerande karakteristika vilken er definierbar i enlighet med en forutbestemd funktion

Info

Publication number
SE8603364L
SE8603364L SE8603364A SE8603364A SE8603364L SE 8603364 L SE8603364 L SE 8603364L SE 8603364 A SE8603364 A SE 8603364A SE 8603364 A SE8603364 A SE 8603364A SE 8603364 L SE8603364 L SE 8603364L
Authority
SE
Sweden
Prior art keywords
circuit
transistor
current
pnp transistor
definable
Prior art date
Application number
SE8603364A
Other languages
Unknown language ( )
English (en)
Swedish (sv)
Other versions
SE8603364D0 (sv
Inventor
R Gariboldi
M Morelli
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Publication of SE8603364D0 publication Critical patent/SE8603364D0/xx
Publication of SE8603364L publication Critical patent/SE8603364L/

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/0422—Anti-saturation measures
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Measurement Of Current Or Voltage (AREA)
SE8603364A 1985-08-09 1986-08-08 Anti-bottningskrets for en integrerad pnp-transistor som har en intervenerande karakteristika vilken er definierbar i enlighet med en forutbestemd funktion SE8603364L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT21900/85A IT1185878B (it) 1985-08-09 1985-08-09 Circuito antisaturazione per transistore pnp integrato con caratteristica di intervento definibile secondo una funzione prefissata

Publications (2)

Publication Number Publication Date
SE8603364D0 SE8603364D0 (sv) 1986-08-08
SE8603364L true SE8603364L (sv) 1987-02-10

Family

ID=11188447

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8603364A SE8603364L (sv) 1985-08-09 1986-08-08 Anti-bottningskrets for en integrerad pnp-transistor som har en intervenerande karakteristika vilken er definierbar i enlighet med en forutbestemd funktion

Country Status (8)

Country Link
US (1) US4786827A (nl)
JP (1) JP2560013B2 (nl)
DE (1) DE3626817C2 (nl)
FR (1) FR2586148B1 (nl)
GB (1) GB2179218B (nl)
IT (1) IT1185878B (nl)
NL (1) NL8601930A (nl)
SE (1) SE8603364L (nl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684878A (en) * 1986-05-08 1987-08-04 Rca Corporation Transistor base current regulator
US5036218A (en) * 1990-03-21 1991-07-30 International Business Machines Corporation Antisaturation circuit
JP2768855B2 (ja) * 1991-01-29 1998-06-25 株式会社東芝 半導体装置
DE69227244T2 (de) * 1992-07-28 1999-03-04 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Sättigungssteuerung eines integrierten bipolaren Transistors
JP2996817B2 (ja) * 1992-11-30 2000-01-11 株式会社東芝 ドライバ回路
EP0713163B1 (en) * 1994-11-17 1999-10-06 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Protection circuit and method for power transistors, voltage regulator using the same
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
FR2750514A1 (fr) * 1996-06-26 1998-01-02 Philips Electronics Nv Dispositif de regulation de tension a faible dissipation interne d'energie
CN112327985B (zh) * 2020-11-06 2022-06-07 中国电子科技集团公司第二十四研究所 一种低压差线性稳压电路、低压差线性稳压器及电子芯片

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697860A (en) * 1971-03-15 1972-10-10 Westinghouse Electric Corp Dc static switch circuit with a main switch device and a power sharing circuit portion
US3693032A (en) * 1971-04-23 1972-09-19 Ibm Antisaturation technique for ttl circuits
JPS5244420B2 (nl) * 1973-06-11 1977-11-08
US4064448A (en) * 1976-11-22 1977-12-20 Fairchild Camera And Instrument Corporation Band gap voltage regulator circuit including a merged reference voltage source and error amplifier
GB1579326A (en) * 1977-03-23 1980-11-19 Plessey Co Ltd Voltage surge limiters
JPS5838041A (ja) * 1981-08-31 1983-03-05 Asahi Optical Co Ltd Ａｐｄバイアス回路
JPS58169605A (ja) * 1982-03-31 1983-10-06 Toshiba Corp 直流電圧安定化回路
DE3341345C2 (de) * 1983-11-15 1987-01-02 SGS-ATES Deutschland Halbleiter-Bauelemente GmbH, 8018 Grafing Längsspannungsregler
IT1209647B (it) * 1985-06-24 1989-08-30 Sgs Microelettronica Spa Circuito antisaturazione per transistore pnp integrato.

Also Published As

Publication number Publication date
DE3626817C2 (de) 1999-03-25
GB8613699D0 (en) 1986-07-09
DE3626817A1 (de) 1987-02-12
GB2179218A (en) 1987-02-25
JPS6235924A (ja) 1987-02-16
US4786827A (en) 1988-11-22
SE8603364D0 (sv) 1986-08-08
IT8521900A0 (it) 1985-08-09
JP2560013B2 (ja) 1996-12-04
GB2179218B (en) 1989-08-02
FR2586148A1 (fr) 1987-02-13
NL8601930A (nl) 1987-03-02
FR2586148B1 (fr) 1994-04-29
IT1185878B (it) 1987-11-18

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