SE8101887L - Anordning for konversion av elektromagnetisk stralning till elektrisk strom - Google Patents

Anordning for konversion av elektromagnetisk stralning till elektrisk strom

Info

Publication number
SE8101887L
SE8101887L SE8101887A SE8101887A SE8101887L SE 8101887 L SE8101887 L SE 8101887L SE 8101887 A SE8101887 A SE 8101887A SE 8101887 A SE8101887 A SE 8101887A SE 8101887 L SE8101887 L SE 8101887L
Authority
SE
Sweden
Prior art keywords
conversion
electromagnetic radiation
electrical current
portions
superlattice
Prior art date
Application number
SE8101887A
Other languages
English (en)
Inventor
A E Blakeslee
K W Mitchell
Original Assignee
Us Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Us Energy filed Critical Us Energy
Publication of SE8101887L publication Critical patent/SE8101887L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
SE8101887A 1980-03-25 1981-03-24 Anordning for konversion av elektromagnetisk stralning till elektrisk strom SE8101887L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/133,702 US4278474A (en) 1980-03-25 1980-03-25 Device for conversion of electromagnetic radiation into electrical current

Publications (1)

Publication Number Publication Date
SE8101887L true SE8101887L (sv) 1981-09-26

Family

ID=22459914

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8101887A SE8101887L (sv) 1980-03-25 1981-03-24 Anordning for konversion av elektromagnetisk stralning till elektrisk strom

Country Status (11)

Country Link
US (1) US4278474A (sv)
JP (1) JPS571268A (sv)
AU (1) AU535512B2 (sv)
CA (1) CA1153813A (sv)
DE (1) DE3111828A1 (sv)
ES (1) ES8203165A1 (sv)
FR (1) FR2479569B1 (sv)
GB (1) GB2072421B (sv)
IL (1) IL62458A (sv)
IT (1) IT1137305B (sv)
SE (1) SE8101887L (sv)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
US4338480A (en) * 1980-12-29 1982-07-06 Varian Associates, Inc. Stacked multijunction photovoltaic converters
US4387265A (en) * 1981-07-17 1983-06-07 University Of Delaware Tandem junction amorphous semiconductor photovoltaic cell
US4404421A (en) * 1982-02-26 1983-09-13 Chevron Research Company Ternary III-V multicolor solar cells and process of fabrication
US4451691A (en) * 1982-02-26 1984-05-29 Chevron Research Company Three-terminal ternary III-V multicolor solar cells and process of fabrication
JPS58209168A (ja) * 1982-05-31 1983-12-06 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
US4597638A (en) * 1983-02-28 1986-07-01 At&T Bell Laboratories Nonlinear optical apparatus
US4575577A (en) * 1983-05-27 1986-03-11 Chevron Research Company Ternary III-V multicolor solar cells containing a quaternary window layer and a quaternary transition layer
US4591654A (en) * 1983-07-18 1986-05-27 Nippon Telegraph And Telephone Public Corporation Solar cells based on indium phosphide
US4598164A (en) * 1983-10-06 1986-07-01 Exxon Research And Engineering Co. Solar cell made from amorphous superlattice material
US4803537A (en) * 1984-01-13 1989-02-07 Texas Instruments Incorporated Infrared detector system based upon group III-V epitaxial material
EP0153043A3 (en) * 1984-02-15 1986-09-24 Energy Conversion Devices, Inc. Ohmic contact layer
GB2156511A (en) * 1984-03-23 1985-10-09 Philips Electronic Associated Optical absorption spectroscopy for semiconductors
US4582952A (en) * 1984-04-30 1986-04-15 Astrosystems, Inc. Gallium arsenide phosphide top solar cell
US4771321A (en) * 1984-08-29 1988-09-13 Varian Associates, Inc. High conductance ohmic junction for monolithic semiconductor devices
FR2586804B1 (fr) * 1985-08-30 1989-03-31 Centre Nat Rech Scient Procede et dispositif de photo-detection rapide a l'aide d'un superreseau
JPS6288389A (ja) * 1985-10-15 1987-04-22 Toshiba Corp 半導体発光素子
US4725870A (en) * 1985-11-18 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Silicon germanium photodetector
CA1282671C (en) * 1985-11-18 1991-04-09 John Condon Bean Device having strain induced region
US4631352A (en) * 1985-12-17 1986-12-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells
FR2597662B1 (fr) * 1986-04-22 1988-06-17 Thomson Csf Photodiode pin realisee a partir de semi-conducteur amorphe
JPH02218174A (ja) * 1989-02-17 1990-08-30 Mitsubishi Electric Corp 光電変換半導体装置
US5246506A (en) * 1991-07-16 1993-09-21 Solarex Corporation Multijunction photovoltaic device and fabrication method
JPH07101753B2 (ja) * 1992-08-05 1995-11-01 日立電線株式会社 積層型太陽電池
US5407491A (en) * 1993-04-08 1995-04-18 University Of Houston Tandem solar cell with improved tunnel junction
US5800630A (en) * 1993-04-08 1998-09-01 University Of Houston Tandem solar cell with indium phosphide tunnel junction
JP2615404B2 (ja) * 1993-04-16 1997-05-28 工業技術院長 太陽電池
US5479032A (en) * 1994-07-21 1995-12-26 Trustees Of Princeton University Multiwavelength infrared focal plane array detector
US6147296A (en) 1995-12-06 2000-11-14 University Of Houston Multi-quantum well tandem solar cell
US6376337B1 (en) * 1997-11-10 2002-04-23 Nanodynamics, Inc. Epitaxial SiOx barrier/insulation layer
US6657378B2 (en) * 2001-09-06 2003-12-02 The Trustees Of Princeton University Organic photovoltaic devices
AU2002230804A1 (en) * 2001-12-14 2003-06-30 Midwest Research Institute Multi-junction solar cell device
US7309832B2 (en) * 2001-12-14 2007-12-18 Midwest Research Institute Multi-junction solar cell device
US8067687B2 (en) 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US8173891B2 (en) * 2002-05-21 2012-05-08 Alliance For Sustainable Energy, Llc Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps
US20060162768A1 (en) * 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US8772628B2 (en) 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
US9123614B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
US8236600B2 (en) * 2008-11-10 2012-08-07 Emcore Solar Power, Inc. Joining method for preparing an inverted metamorphic multijunction solar cell
US7915645B2 (en) * 2009-05-28 2011-03-29 International Rectifier Corporation Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
US20110073887A1 (en) * 2009-09-25 2011-03-31 Alliance For Sustainable Energy, Llc Optoelectronic devices having a direct-band-gap base and an indirect-band-gap emitter
CA2814119C (en) 2010-10-12 2017-01-17 Alliance For Sustainable Energy, Llc High bandgap iii-v alloys for high efficiency optoelectronics
US9226402B2 (en) 2012-06-11 2015-12-29 Mc10, Inc. Strain isolation structures for stretchable electronics
US9295842B2 (en) 2012-07-05 2016-03-29 Mc10, Inc. Catheter or guidewire device including flow sensing and use thereof
JP2016500869A (ja) 2012-10-09 2016-01-14 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． 衣類と一体化されたコンフォーマル電子回路
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US9590131B2 (en) 2013-03-27 2017-03-07 Alliance For Sustainable Energy, Llc Systems and methods for advanced ultra-high-performance InP solar cells
US9706647B2 (en) 2013-05-14 2017-07-11 Mc10, Inc. Conformal electronics including nested serpentine interconnects
CA2920485A1 (en) 2013-08-05 2015-02-12 Mc10, Inc. Flexible temperature sensor including conformable electronics
CA2925387A1 (en) 2013-10-07 2015-04-16 Mc10, Inc. Conformal sensor systems for sensing and analysis
KR102365120B1 (ko) 2013-11-22 2022-02-18 메디데이타 솔루션즈, 인코포레이티드 심장 활동 감지 및 분석용 등각 센서 시스템
EP3092661A4 (en) 2014-01-06 2017-09-27 Mc10, Inc. Encapsulated conformal electronic systems and devices, and methods of making and using the same
KR20160129007A (ko) 2014-03-04 2016-11-08 엠씨10, 인크 전자 디바이스를 위한 다부분 유연성 봉지 하우징
USD781270S1 (en) 2014-10-15 2017-03-14 Mc10, Inc. Electronic device having antenna
CA2965658A1 (en) * 2014-11-18 2016-05-26 Mc10, Inc. System, device, and method for electronic device activation
EP3258837A4 (en) 2015-02-20 2018-10-10 Mc10, Inc. Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation
WO2017015000A1 (en) 2015-07-17 2017-01-26 Mc10, Inc. Conductive stiffener, method of making a conductive stiffener, and conductive adhesive and encapsulation layers
WO2017031129A1 (en) 2015-08-19 2017-02-23 Mc10, Inc. Wearable heat flux devices and methods of use
WO2017059215A1 (en) 2015-10-01 2017-04-06 Mc10, Inc. Method and system for interacting with a virtual environment
US10532211B2 (en) 2015-10-05 2020-01-14 Mc10, Inc. Method and system for neuromodulation and stimulation
CN108781313B (zh) 2016-02-22 2022-04-08 美谛达解决方案公司 用以贴身获取传感器信息的耦接的集线器和传感器节点的系统、装置和方法
WO2017147052A1 (en) 2016-02-22 2017-08-31 Mc10, Inc. System, devices, and method for on-body data and power transmission
US11154235B2 (en) 2016-04-19 2021-10-26 Medidata Solutions, Inc. Method and system for measuring perspiration
US10447347B2 (en) 2016-08-12 2019-10-15 Mc10, Inc. Wireless charger and high speed data off-loader
US20180331157A1 (en) 2017-05-15 2018-11-15 International Business Machines Corporation Multi-junction photovoltaic cells
CN110148644B (zh) * 2019-05-30 2021-08-20 扬州乾照光电有限公司 一种具有量子阱结构隧穿结的多结太阳电池及制作方法
US11158750B2 (en) * 2019-07-03 2021-10-26 Texas Instruments Incorporated Superlattice photo detector

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2225207B1 (sv) * 1973-04-16 1978-04-21 Ibm
US4017332A (en) * 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
IL48996A (en) * 1975-02-27 1977-08-31 Varian Associates Photovoltaic cells
US4206002A (en) * 1976-10-19 1980-06-03 University Of Pittsburgh Graded band gap multi-junction solar energy cell
US4128733A (en) * 1977-12-27 1978-12-05 Hughes Aircraft Company Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same
US4179702A (en) * 1978-03-09 1979-12-18 Research Triangle Institute Cascade solar cells

Also Published As

Publication number Publication date
AU535512B2 (en) 1984-03-22
IL62458A0 (en) 1981-05-20
CA1153813A (en) 1983-09-13
US4278474A (en) 1981-07-14
IT1137305B (it) 1986-09-10
JPS571268A (en) 1982-01-06
FR2479569B1 (fr) 1985-11-22
AU6864581A (en) 1981-10-01
GB2072421A (en) 1981-09-30
FR2479569A1 (fr) 1981-10-02
IT8120726A0 (it) 1981-03-25
DE3111828A1 (de) 1982-01-07
ES500693A0 (es) 1982-03-01
GB2072421B (en) 1984-09-05
IL62458A (en) 1984-01-31
ES8203165A1 (es) 1982-03-01

Similar Documents

Publication Publication Date Title
SE8101887L (sv) Anordning for konversion av elektromagnetisk stralning till elektrisk strom
JPS5772370A (en) Photoelectric converter
IL61616A (en) Multilayer photovoltaic solar cell with semiconductor layer at the shorting junction interface of the layers
DE69119870D1 (de) Photovoltaisches Bauelement mit Pin-Übergang, mit einer i-Typ Halbleiter-Schicht bestehend aus einer Mehrzahl von Gebieten mit verschiedenen, gradierten Energiebandabständen
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
FR2302593A1 (fr) Cellule solaire constituee par un empilement de couches de l&#39;une et l&#39;autre conductivite
AU498057B2 (en) High efficiency selenium heterojunction solar cells
DE3381607D1 (de) Photoelektrischer umwandler mit halbleiter.
EP0090669A3 (en) Electromagnetic radiation detector
JPS577166A (en) Amorphous thin solar cell
JPS561579A (en) Semiconductor device
JPS561578A (en) Manufacture of semiconductor device
IT1194331B (it) Assorbitore piano per collettore solare,il suo procedimento di fabbricazione,e collettore utilizzante un tale assorbitore
DE3484747D1 (de) Halbleitersubstrat mit einer elektrisch isolierten halbleiteranordnung.
GB1519466A (en) Photodiode detector
JPS56125881A (en) Optical semiconductor element
NO140542C (no) Energiomformer for solstraaling.
JPS5388782A (en) Method of inspecting abnormality of surface of long material
JPS56158488A (en) Semiconductor device
JPS6415687A (en) Radiation detecting element
Bordure et al. Interface recombination phenomena and tunnel effect in Cu2S CdS solar cells
JPS5232287A (en) Semiconductor laser and its manufacturing method
JPS5422102A (en) Wire transmission system using light and electricity in common
Gutkin Carrier Multiplication in Structures with a Thin Space-Charge Layer and Quantum Efficiency of the Internal Photoelectric Effect
JPS5414184A (en) Monolithic solar cell