FR2586804B1 - Procede et dispositif de photo-detection rapide a l'aide d'un superreseau - Google Patents

Procede et dispositif de photo-detection rapide a l'aide d'un superreseau

Info

Publication number
FR2586804B1
FR2586804B1 FR8512970A FR8512970A FR2586804B1 FR 2586804 B1 FR2586804 B1 FR 2586804B1 FR 8512970 A FR8512970 A FR 8512970A FR 8512970 A FR8512970 A FR 8512970A FR 2586804 B1 FR2586804 B1 FR 2586804B1
Authority
FR
France
Prior art keywords
super
array
detection
rapid photo
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8512970A
Other languages
English (en)
Other versions
FR2586804A1 (fr
Inventor
Paul Voisin
Jose Antonio Brum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR8512970A priority Critical patent/FR2586804B1/fr
Priority to DE3629402A priority patent/DE3629402C2/de
Priority to JP61203537A priority patent/JPS6285476A/ja
Priority to US06/902,926 priority patent/US4806993A/en
Publication of FR2586804A1 publication Critical patent/FR2586804A1/fr
Application granted granted Critical
Publication of FR2586804B1 publication Critical patent/FR2586804B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Photovoltaic Devices (AREA)
FR8512970A 1985-08-30 1985-08-30 Procede et dispositif de photo-detection rapide a l'aide d'un superreseau Expired FR2586804B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8512970A FR2586804B1 (fr) 1985-08-30 1985-08-30 Procede et dispositif de photo-detection rapide a l'aide d'un superreseau
DE3629402A DE3629402C2 (de) 1985-08-30 1986-08-29 Verfahren und Vorrichtung zur schnellen Fotodetektierung mit Hilfe eines Supergitters
JP61203537A JPS6285476A (ja) 1985-08-30 1986-08-29 超格子による高速光検出方法および装置
US06/902,926 US4806993A (en) 1985-08-30 1986-09-02 Method and device for rapid photo-detection by means of a super-lattice

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8512970A FR2586804B1 (fr) 1985-08-30 1985-08-30 Procede et dispositif de photo-detection rapide a l'aide d'un superreseau

Publications (2)

Publication Number Publication Date
FR2586804A1 FR2586804A1 (fr) 1987-03-06
FR2586804B1 true FR2586804B1 (fr) 1989-03-31

Family

ID=9322519

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8512970A Expired FR2586804B1 (fr) 1985-08-30 1985-08-30 Procede et dispositif de photo-detection rapide a l'aide d'un superreseau

Country Status (4)

Country Link
US (1) US4806993A (fr)
JP (1) JPS6285476A (fr)
DE (1) DE3629402C2 (fr)
FR (1) FR2586804B1 (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749850A (en) * 1987-04-27 1988-06-07 American Telephone And Telegraph Company High speed quantum well optical detector
US5063419A (en) * 1988-11-15 1991-11-05 The United States Of America As Represented By The Secretary Of The Navy Heterostructure device useable as a far infrared photodetector
US5185647A (en) * 1988-12-12 1993-02-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Long wavelength infrared detector
FR2649536B1 (fr) * 1989-07-04 1994-07-22 Thomson Csf Detecteur d'ondes electromagnetiques
US5036371A (en) * 1989-09-27 1991-07-30 The United States Of America As Represented By The Secretary Of The Navy Multiple quantum well device
US5079601A (en) * 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
US5087948A (en) * 1990-06-25 1992-02-11 Massachusetts Institute Of Technology Disorder-induced narrowband high-speed electronic devices
US5132763A (en) * 1991-02-07 1992-07-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration InAs hole-immobilized doping superlattice long-wave-infrared detector
US5410160A (en) * 1992-06-08 1995-04-25 Motorola, Inc. Interband tunneling field effect transistor
US5412224A (en) * 1992-06-08 1995-05-02 Motorola, Inc. Field effect transistor with non-linear transfer characteristic
US5221849A (en) * 1992-06-16 1993-06-22 Motorola, Inc. Semiconductor device with active quantum well gate
US5477377A (en) * 1992-07-17 1995-12-19 University Of Houston Optical switches and detectors utilizing indirect narrow-gap superlattices as the optical materials
US5449561A (en) * 1992-07-17 1995-09-12 University Of Houston Semimetal-semiconductor heterostructures and multilayers
US5289014A (en) * 1992-08-17 1994-02-22 Motorola, Inc. Semiconductor device having a vertical quantum well via and method for making
US5280180A (en) * 1992-08-19 1994-01-18 Motorola, Inc. Interconnect structure for coupling semiconductor regions and method for making
DE4326754A1 (de) * 1993-08-11 1995-02-16 Daimler Benz Ag Halbleiter-Photodetektor
GB2302597B (en) * 1994-04-26 1998-12-02 Ericsson Telefon Ab L M Super lattice optical absorber
US6037604A (en) * 1994-08-30 2000-03-14 National Science Council Two-mode InGaSb/GaSb strained-layer superlattice infrared photodetector
US7176498B2 (en) * 2003-08-06 2007-02-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Terahertz radiating device based on semiconductor coupled quantum wells
US7485476B2 (en) * 2003-08-06 2009-02-03 Yissum Research Development Company Of The Hebrew University Of Jerusalem Terahertz radiating device based on semiconductor coupled quantum wells
JP4905623B2 (ja) * 2004-10-18 2012-03-28 富士通株式会社 太陽電池
US8022390B1 (en) * 2007-08-17 2011-09-20 Sandia Corporation Lateral conduction infrared photodetector
WO2009101740A1 (fr) * 2008-02-12 2009-08-20 Nec Corporation Élément récepteur de lumière à semiconducteur
WO2009101739A1 (fr) * 2008-02-12 2009-08-20 Nec Corporation Laser à émission par la surface et procédé de fabrication de celui-ci
KR102553841B1 (ko) 2017-07-19 2023-07-10 삼성전자주식회사 광전 변환 소자, 광 센서

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE489417A (fr) * 1949-04-06
JPS5642386A (en) * 1979-09-14 1981-04-20 Agency Of Ind Science & Technol Semiconductor photodetector
US4278474A (en) * 1980-03-25 1981-07-14 The United States Of America As Represented By The United States Department Of Energy Device for conversion of electromagnetic radiation into electrical current
US4348686A (en) * 1980-07-28 1982-09-07 The United States Of America As Represented By The Secretary Of The Army Microwave-infrared detector with semiconductor superlattice region
DE3480631D1 (de) * 1983-06-24 1990-01-04 Nec Corp Halbleiterstruktur mit uebergitter hoher traegerdichte.
US4607272A (en) * 1983-10-06 1986-08-19 The United States Of America As Represented By The United States Department Of Energy Electro-optical SLS devices for operating at new wavelength ranges
US4642144A (en) * 1983-10-06 1987-02-10 Exxon Research And Engineering Company Proximity doping of amorphous semiconductors
JPH0614554B2 (ja) * 1985-03-22 1994-02-23 工業技術院長 薄膜太陽電池の製造方法
JPS61292973A (ja) * 1985-06-20 1986-12-23 Fujitsu Ltd 半導体受光素子
US4645707A (en) * 1985-11-19 1987-02-24 The General Electric Company, P.L.C. Semiconductor devices

Also Published As

Publication number Publication date
DE3629402C2 (de) 1994-11-24
US4806993A (en) 1989-02-21
FR2586804A1 (fr) 1987-03-06
DE3629402A1 (de) 1987-03-05
JPS6285476A (ja) 1987-04-18

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Legal Events

Date Code Title Description
ST Notification of lapse