FR2479569B1 - Dispositif de conversion de rayonnement electromagnetique en courant electrique - Google Patents

Dispositif de conversion de rayonnement electromagnetique en courant electrique

Info

Publication number
FR2479569B1
FR2479569B1 FR8106027A FR8106027A FR2479569B1 FR 2479569 B1 FR2479569 B1 FR 2479569B1 FR 8106027 A FR8106027 A FR 8106027A FR 8106027 A FR8106027 A FR 8106027A FR 2479569 B1 FR2479569 B1 FR 2479569B1
Authority
FR
France
Prior art keywords
electric current
electromagnetic radiation
converting electromagnetic
converting
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8106027A
Other languages
English (en)
Other versions
FR2479569A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Energy
Original Assignee
US Department of Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Energy filed Critical US Department of Energy
Publication of FR2479569A1 publication Critical patent/FR2479569A1/fr
Application granted granted Critical
Publication of FR2479569B1 publication Critical patent/FR2479569B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
FR8106027A 1980-03-25 1981-03-25 Dispositif de conversion de rayonnement electromagnetique en courant electrique Expired FR2479569B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/133,702 US4278474A (en) 1980-03-25 1980-03-25 Device for conversion of electromagnetic radiation into electrical current

Publications (2)

Publication Number Publication Date
FR2479569A1 FR2479569A1 (fr) 1981-10-02
FR2479569B1 true FR2479569B1 (fr) 1985-11-22

Family

ID=22459914

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8106027A Expired FR2479569B1 (fr) 1980-03-25 1981-03-25 Dispositif de conversion de rayonnement electromagnetique en courant electrique

Country Status (11)

Country Link
US (1) US4278474A (fr)
JP (1) JPS571268A (fr)
AU (1) AU535512B2 (fr)
CA (1) CA1153813A (fr)
DE (1) DE3111828A1 (fr)
ES (1) ES8203165A1 (fr)
FR (1) FR2479569B1 (fr)
GB (1) GB2072421B (fr)
IL (1) IL62458A (fr)
IT (1) IT1137305B (fr)
SE (1) SE8101887L (fr)

Families Citing this family (71)

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US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
US4338480A (en) * 1980-12-29 1982-07-06 Varian Associates, Inc. Stacked multijunction photovoltaic converters
US4387265A (en) * 1981-07-17 1983-06-07 University Of Delaware Tandem junction amorphous semiconductor photovoltaic cell
US4404421A (en) * 1982-02-26 1983-09-13 Chevron Research Company Ternary III-V multicolor solar cells and process of fabrication
US4451691A (en) * 1982-02-26 1984-05-29 Chevron Research Company Three-terminal ternary III-V multicolor solar cells and process of fabrication
JPS58209168A (ja) * 1982-05-31 1983-12-06 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
US4597638A (en) * 1983-02-28 1986-07-01 At&T Bell Laboratories Nonlinear optical apparatus
US4575577A (en) * 1983-05-27 1986-03-11 Chevron Research Company Ternary III-V multicolor solar cells containing a quaternary window layer and a quaternary transition layer
US4591654A (en) * 1983-07-18 1986-05-27 Nippon Telegraph And Telephone Public Corporation Solar cells based on indium phosphide
US4598164A (en) * 1983-10-06 1986-07-01 Exxon Research And Engineering Co. Solar cell made from amorphous superlattice material
US4803537A (en) * 1984-01-13 1989-02-07 Texas Instruments Incorporated Infrared detector system based upon group III-V epitaxial material
EP0153043A3 (fr) * 1984-02-15 1986-09-24 Energy Conversion Devices, Inc. Couche de contact ohmique
GB2156511A (en) * 1984-03-23 1985-10-09 Philips Electronic Associated Optical absorption spectroscopy for semiconductors
US4582952A (en) * 1984-04-30 1986-04-15 Astrosystems, Inc. Gallium arsenide phosphide top solar cell
US4771321A (en) * 1984-08-29 1988-09-13 Varian Associates, Inc. High conductance ohmic junction for monolithic semiconductor devices
FR2586804B1 (fr) * 1985-08-30 1989-03-31 Centre Nat Rech Scient Procede et dispositif de photo-detection rapide a l'aide d'un superreseau
JPS6288389A (ja) * 1985-10-15 1987-04-22 Toshiba Corp 半導体発光素子
CA1282671C (fr) * 1985-11-18 1991-04-09 John Condon Bean Dispostif a zone contrainte
US4725870A (en) * 1985-11-18 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Silicon germanium photodetector
US4631352A (en) * 1985-12-17 1986-12-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells
FR2597662B1 (fr) * 1986-04-22 1988-06-17 Thomson Csf Photodiode pin realisee a partir de semi-conducteur amorphe
JPH02218174A (ja) * 1989-02-17 1990-08-30 Mitsubishi Electric Corp 光電変換半導体装置
US5246506A (en) * 1991-07-16 1993-09-21 Solarex Corporation Multijunction photovoltaic device and fabrication method
JPH07101753B2 (ja) * 1992-08-05 1995-11-01 日立電線株式会社 積層型太陽電池
US5407491A (en) * 1993-04-08 1995-04-18 University Of Houston Tandem solar cell with improved tunnel junction
US5800630A (en) * 1993-04-08 1998-09-01 University Of Houston Tandem solar cell with indium phosphide tunnel junction
JP2615404B2 (ja) * 1993-04-16 1997-05-28 工業技術院長 太陽電池
US5479032A (en) * 1994-07-21 1995-12-26 Trustees Of Princeton University Multiwavelength infrared focal plane array detector
US6147296A (en) * 1995-12-06 2000-11-14 University Of Houston Multi-quantum well tandem solar cell
US6376337B1 (en) * 1997-11-10 2002-04-23 Nanodynamics, Inc. Epitaxial SiOx barrier/insulation layer
US6657378B2 (en) * 2001-09-06 2003-12-02 The Trustees Of Princeton University Organic photovoltaic devices
WO2003052836A1 (fr) * 2001-12-14 2003-06-26 Midwest Research Institute Dispositif de cellules solaires a jonctions multiples
US7309832B2 (en) * 2001-12-14 2007-12-18 Midwest Research Institute Multi-junction solar cell device
US8173891B2 (en) * 2002-05-21 2012-05-08 Alliance For Sustainable Energy, Llc Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps
US20060162768A1 (en) 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US8067687B2 (en) * 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US8772628B2 (en) 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
US9123614B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
US8236600B2 (en) * 2008-11-10 2012-08-07 Emcore Solar Power, Inc. Joining method for preparing an inverted metamorphic multijunction solar cell
US7915645B2 (en) * 2009-05-28 2011-03-29 International Rectifier Corporation Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
US20110073887A1 (en) * 2009-09-25 2011-03-31 Alliance For Sustainable Energy, Llc Optoelectronic devices having a direct-band-gap base and an indirect-band-gap emitter
JP5852660B2 (ja) 2010-10-12 2016-02-03 アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー 高効率なオプトエレクトロニクスのための大きなバンドギャップをもつｉｉｉ−ｖ族化合物
US9226402B2 (en) 2012-06-11 2015-12-29 Mc10, Inc. Strain isolation structures for stretchable electronics
US9295842B2 (en) 2012-07-05 2016-03-29 Mc10, Inc. Catheter or guidewire device including flow sensing and use thereof
EP2906960A4 (fr) 2012-10-09 2016-06-15 Mc10 Inc Électronique conforme intégrée à un article vestimentaire
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US9590131B2 (en) 2013-03-27 2017-03-07 Alliance For Sustainable Energy, Llc Systems and methods for advanced ultra-high-performance InP solar cells
US9706647B2 (en) 2013-05-14 2017-07-11 Mc10, Inc. Conformal electronics including nested serpentine interconnects
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US9949691B2 (en) 2013-11-22 2018-04-24 Mc10, Inc. Conformal sensor systems for sensing and analysis of cardiac activity
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WO2015134588A1 (fr) 2014-03-04 2015-09-11 Mc10, Inc. Boîtier d'encapsulation souple en plusieurs parties pour dispositifs électroniques
USD781270S1 (en) 2014-10-15 2017-03-14 Mc10, Inc. Electronic device having antenna
CN107005282A (zh) * 2014-11-18 2017-08-01 Mc10股份有限公司 用于电子装置激活的系统、装置和方法
US10477354B2 (en) 2015-02-20 2019-11-12 Mc10, Inc. Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation
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FR2225207B1 (fr) * 1973-04-16 1978-04-21 Ibm
US4017332A (en) * 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
IL48996A (en) * 1975-02-27 1977-08-31 Varian Associates Photovoltaic cells
US4206002A (en) * 1976-10-19 1980-06-03 University Of Pittsburgh Graded band gap multi-junction solar energy cell
US4128733A (en) * 1977-12-27 1978-12-05 Hughes Aircraft Company Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same
US4179702A (en) * 1978-03-09 1979-12-18 Research Triangle Institute Cascade solar cells

Also Published As

Publication number Publication date
GB2072421B (en) 1984-09-05
ES500693A0 (es) 1982-03-01
IL62458A0 (en) 1981-05-20
FR2479569A1 (fr) 1981-10-02
SE8101887L (sv) 1981-09-26
DE3111828A1 (de) 1982-01-07
IL62458A (en) 1984-01-31
AU6864581A (en) 1981-10-01
IT1137305B (it) 1986-09-10
AU535512B2 (en) 1984-03-22
CA1153813A (fr) 1983-09-13
JPS571268A (en) 1982-01-06
IT8120726A0 (it) 1981-03-25
US4278474A (en) 1981-07-14
GB2072421A (en) 1981-09-30
ES8203165A1 (es) 1982-03-01

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Legal Events

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ST Notification of lapse