SE8009001L - Halvledaranordning for uppfriskning av minnescell - Google Patents
Halvledaranordning for uppfriskning av minnescellInfo
- Publication number
- SE8009001L SE8009001L SE8009001A SE8009001A SE8009001L SE 8009001 L SE8009001 L SE 8009001L SE 8009001 A SE8009001 A SE 8009001A SE 8009001 A SE8009001 A SE 8009001A SE 8009001 L SE8009001 L SE 8009001L
- Authority
- SE
- Sweden
- Prior art keywords
- capacitor
- memory cell
- refresh
- writing
- mos
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000003990 capacitor Substances 0.000 abstract 5
- 230000005669 field effect Effects 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/109,777 US4292677A (en) | 1980-01-07 | 1980-01-07 | Self-refreshed capacitor memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE8009001L true SE8009001L (sv) | 1981-07-08 |
Family
ID=22329511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8009001A SE8009001L (sv) | 1980-01-07 | 1980-12-19 | Halvledaranordning for uppfriskning av minnescell |
Country Status (12)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4413329A (en) * | 1980-12-24 | 1983-11-01 | International Business Machines Corporation | Dynamic memory cell |
| DE3235835A1 (de) * | 1982-09-28 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Halbleiter-speicherzelle |
| US5003361A (en) * | 1987-08-31 | 1991-03-26 | At&T Bell Laboratories | Active dynamic memory cell |
| WO2000019444A1 (de) * | 1998-09-30 | 2000-04-06 | Infineon Technologies Ag | Single-port speicherzelle |
| US6768668B2 (en) * | 2001-06-12 | 2004-07-27 | Infineon Technologies Aktiengesellschaft | Converting volatile memory to non-volatile memory |
| US6686729B1 (en) | 2002-10-15 | 2004-02-03 | Texas Instruments Incorporated | DC/DC switching regulator having reduced switching loss |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4030083A (en) * | 1975-04-04 | 1977-06-14 | Bell Telephone Laboratories, Incorporated | Self-refreshed capacitor memory cell |
| US4122550A (en) * | 1978-02-08 | 1978-10-24 | Intel Corporation | Low power random access memory with self-refreshing cells |
| US4203159A (en) * | 1978-10-05 | 1980-05-13 | Wanlass Frank M | Pseudostatic electronic memory |
-
1980
- 1980-01-07 US US06/109,777 patent/US4292677A/en not_active Expired - Lifetime
- 1980-12-18 CA CA000367080A patent/CA1135853A/en not_active Expired
- 1980-12-19 SE SE8009001A patent/SE8009001L/ not_active Application Discontinuation
- 1980-12-31 ES ES498280A patent/ES8205074A1/es not_active Expired
-
1981
- 1981-01-05 DD DD81226826A patent/DD156857A5/de unknown
- 1981-01-05 DE DE19813100129 patent/DE3100129A1/de not_active Withdrawn
- 1981-01-05 FR FR8100045A patent/FR2474742A1/fr active Granted
- 1981-01-06 IT IT19020/81A patent/IT1134949B/it active
- 1981-01-06 GB GB8100212A patent/GB2067867B/en not_active Expired
- 1981-01-06 BE BE0/203400A patent/BE886964A/fr not_active IP Right Cessation
- 1981-01-06 NL NL8100020A patent/NL8100020A/nl not_active Application Discontinuation
- 1981-01-07 JP JP52681A patent/JPS56101695A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL8100020A (nl) | 1981-08-03 |
| IT8119020A0 (it) | 1981-01-06 |
| FR2474742B1 (US20100268047A1-20101021-C00004.png) | 1984-01-27 |
| ES498280A0 (es) | 1982-06-01 |
| US4292677A (en) | 1981-09-29 |
| BE886964A (fr) | 1981-05-04 |
| CA1135853A (en) | 1982-11-16 |
| DD156857A5 (de) | 1982-09-22 |
| DE3100129A1 (de) | 1981-11-19 |
| FR2474742A1 (fr) | 1981-07-31 |
| GB2067867B (en) | 1983-10-26 |
| ES8205074A1 (es) | 1982-06-01 |
| GB2067867A (en) | 1981-07-30 |
| JPS56101695A (en) | 1981-08-14 |
| IT1134949B (it) | 1986-08-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAV | Patent application has lapsed |
Ref document number: 8009001-2 |