SE8005702L - CONTROL CIRCUITS FOR CONTROLLED DIODOM CONNECTORS - Google Patents

CONTROL CIRCUITS FOR CONTROLLED DIODOM CONNECTORS

Info

Publication number
SE8005702L
SE8005702L SE8005702A SE8005702A SE8005702L SE 8005702 L SE8005702 L SE 8005702L SE 8005702 A SE8005702 A SE 8005702A SE 8005702 A SE8005702 A SE 8005702A SE 8005702 L SE8005702 L SE 8005702L
Authority
SE
Sweden
Prior art keywords
gated diode
diode switch
controlled
gds31
gds1
Prior art date
Application number
SE8005702A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE420254B (en
Inventor
A R Hartman
T J Riley
P W Shackle
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE8005702L publication Critical patent/SE8005702L/en
Publication of SE420254B publication Critical patent/SE420254B/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

A gated diode switch (GDS1, GDS31) requires a voltage applied to the gate which is more positive than that of the anode or cathode in order to break current flow between the anode and cathode. In addition, a current of at least the same order of magnitude as flows between anode and cathode must be sourced into the gate of the switch to break current flow. The use of a second gated diode switch (GDS2, GDS32) coupled by the cathode (terminal 222, 322) thereof to the gate of a gated diode switch (GDS1, GDS31) which is to be controlled provides a high voltage and current capability circuitry for cutting off (interrupting) or inhibiting current flow through the gated diode switch (GDS1, GDS31). The state of a gated diode switch (GDS1, GDS31) is thus controlled by a second gated diode switch (GDS2, GDS32). The state of the second gated diode switch is controlled by a voltage control circuit having only relatively modest current handling capability.
SE8005702A 1978-12-20 1980-08-13 CONTROL FOR CONTROL DIODOM CONNECTOR SE420254B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97202378A 1978-12-20 1978-12-20
US97202478A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
SE8005702L true SE8005702L (en) 1980-08-13
SE420254B SE420254B (en) 1981-09-21

Family

ID=27130551

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8005702A SE420254B (en) 1978-12-20 1980-08-13 CONTROL FOR CONTROL DIODOM CONNECTOR

Country Status (18)

Country Link
JP (1) JPS55501043A (en)
KR (1) KR830001097B1 (en)
AU (1) AU524716B2 (en)
CH (1) CH660820A5 (en)
DD (1) DD200547A5 (en)
ES (1) ES487067A1 (en)
FR (1) FR2445663A1 (en)
GB (1) GB2048599B (en)
HK (1) HK69184A (en)
HU (1) HU180115B (en)
IE (1) IE49229B1 (en)
IL (1) IL59013A (en)
IN (1) IN154029B (en)
IT (1) IT1126604B (en)
NL (1) NL7920198A (en)
PL (1) PL127058B1 (en)
SE (1) SE420254B (en)
WO (1) WO1980001347A1 (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271700A (en) * 1963-03-01 1966-09-06 Gen Electric Solid state switching circuits
US3596114A (en) * 1969-11-25 1971-07-27 Honeywell Inc Hall effect contactless switch with prebiased schmitt trigger
US3793581A (en) * 1972-04-19 1974-02-19 Us Navy Solid state phase controlled switch
JPS5210012A (en) * 1975-07-14 1977-01-26 Hitachi Ltd Pnpn switch driving circuit
US4112315A (en) * 1975-09-08 1978-09-05 Hitachi, Ltd. Semiconductor switch circuit
UST957008I4 (en) * 1976-04-12 1977-04-05 Rca Corporation Switching circuit with accurate current threshold
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid

Also Published As

Publication number Publication date
CH660820A5 (en) 1987-06-15
AU5386579A (en) 1980-06-26
FR2445663B1 (en) 1983-11-25
PL220497A1 (en) 1980-09-08
GB2048599A (en) 1980-12-10
JPS55501043A (en) 1980-11-27
KR830001097B1 (en) 1983-06-02
DD200547A5 (en) 1983-05-11
GB2048599B (en) 1983-04-20
FR2445663A1 (en) 1980-07-25
IE792369L (en) 1980-06-20
IL59013A0 (en) 1980-03-31
AU524716B2 (en) 1982-09-30
PL127058B1 (en) 1983-09-30
IE49229B1 (en) 1985-09-04
ES487067A1 (en) 1980-09-16
NL7920198A (en) 1980-10-31
IT7928207A0 (en) 1979-12-19
HK69184A (en) 1984-09-14
HU180115B (en) 1983-02-28
IL59013A (en) 1982-07-30
IN154029B (en) 1984-09-08
IT1126604B (en) 1986-05-21
SE420254B (en) 1981-09-21
WO1980001347A1 (en) 1980-06-26

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