SE7406349L - - Google Patents

Info

Publication number
SE7406349L
SE7406349L SE7406349A SE7406349A SE7406349L SE 7406349 L SE7406349 L SE 7406349L SE 7406349 A SE7406349 A SE 7406349A SE 7406349 A SE7406349 A SE 7406349A SE 7406349 L SE7406349 L SE 7406349L
Authority
SE
Sweden
Prior art keywords
gate electrode
configuration
disposed
relatively high
layer
Prior art date
Application number
SE7406349A
Other languages
English (en)
Inventor
J M S Neilson
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7406349L publication Critical patent/SE7406349L/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors

Landscapes

  • Thyristors (AREA)
SE7406349A 1973-05-29 1974-05-13 SE7406349L (h)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36466473A 1973-05-29 1973-05-29

Publications (1)

Publication Number Publication Date
SE7406349L true SE7406349L (h) 1974-12-02

Family

ID=23435519

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7406349A SE7406349L (h) 1973-05-29 1974-05-13

Country Status (10)

Country Link
US (1) US4062032A (h)
JP (1) JPS5033777A (h)
AU (1) AU6928374A (h)
BE (1) BE815638A (h)
BR (1) BR7404284D0 (h)
DE (1) DE2425364A1 (h)
FR (1) FR2232086B3 (h)
IT (1) IT1010445B (h)
NL (1) NL7406859A (h)
SE (1) SE7406349L (h)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214255A (en) * 1977-02-07 1980-07-22 Rca Corporation Gate turn-off triac with dual low conductivity regions contacting central gate region
JPS5912026B2 (ja) * 1977-10-14 1984-03-19 株式会社日立製作所 サイリスタ
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor
JPS6115366A (ja) * 1984-06-30 1986-01-23 Mitsuo Kusano ゲ−トタ−ンオフサイリスタ及びその製造方法
US4757025A (en) * 1985-03-25 1988-07-12 Motorola Inc. Method of making gate turn off switch with anode short and buried base
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor
US4961100A (en) * 1988-06-20 1990-10-02 General Electric Company Bidirectional field effect semiconductor device and circuit
US5306930A (en) * 1992-12-14 1994-04-26 North Carolina State University At Raleigh Emitter switched thyristor with buried dielectric layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3146135A (en) * 1959-05-11 1964-08-25 Clevite Corp Four layer semiconductive device
US3337783A (en) * 1964-01-16 1967-08-22 Westinghouse Electric Corp Shorted emitter controlled rectifier with improved turn-off gain
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
US3566206A (en) * 1968-12-20 1971-02-23 Bell Telephone Labor Inc Negative resistance semiconductor device having a pinipin zone structure
US3798079A (en) * 1972-06-05 1974-03-19 Westinghouse Electric Corp Triple diffused high voltage transistor

Also Published As

Publication number Publication date
DE2425364A1 (de) 1975-01-02
BR7404284D0 (pt) 1975-01-07
IT1010445B (it) 1977-01-10
JPS5033777A (h) 1975-04-01
US4062032A (en) 1977-12-06
FR2232086A1 (h) 1974-12-27
NL7406859A (h) 1974-12-03
AU6928374A (en) 1975-11-27
FR2232086B3 (h) 1977-03-18
BE815638A (fr) 1974-09-16

Similar Documents

Publication Publication Date Title
CA954233A (en) Over voltage protection circuit lateral bipolar transistor with gated collector junction
GB954947A (en) Surface-potential controlled semiconductor device
CA990863A (en) Mesa type thyristor and the manufacture thereof
SE7406349L (h)
FR2203169B3 (h)
CA970044A (en) Resettable binary flip-flop of the semiconductor type
GB1344605A (en) Thyristors
GB1485994A (en) Thyristors
CA957784A (en) Method of forming region of a desired conductivity type in the surface of a semiconductor body
CA923627A (en) Semiconductor having a transistor, a thyristor and a diode in one body
IT948817B (it) Procedimento per la diffusione di un impurezza in un corpo semicon duttore
JPS5413275A (en) Controlled rectifying element of semiconductor
CA999978A (en) Thyristor with auxiliary gate
GB1342570A (en) Thyristors
JPS5220769A (en) Longitudinal semi-conductor unit
FR2172200B1 (h)
BR7209060D0 (pt) Retificador semicondutor comandavel
GB1465737A (en) Thyristors
CA922023A (en) Thyristor with integrated ballasted gate auxiliary thyristor portion
GB1346074A (en) Gate-controlled thyristors
CA950130A (en) Overlay transistor employing highly conductive semiconductor grid and method for making
JPS5211778A (en) Semiconductor controlled rectifier
JPS51136290A (en) Short emitter type thyristor
JPS52136583A (en) Mos type semiconductor device
FR2118846A1 (en) Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 7406349-6

Format of ref document f/p: F