SE522909C2 - Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor - Google Patents
Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristorInfo
- Publication number
- SE522909C2 SE522909C2 SE0102960A SE0102960A SE522909C2 SE 522909 C2 SE522909 C2 SE 522909C2 SE 0102960 A SE0102960 A SE 0102960A SE 0102960 A SE0102960 A SE 0102960A SE 522909 C2 SE522909 C2 SE 522909C2
- Authority
- SE
- Sweden
- Prior art keywords
- varistor
- connection point
- toad
- resistance
- varistom
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 4
- 238000010586 diagram Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000012212 insulator Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 239000000969 carrier Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/042—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Thermistors And Varistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0102960A SE522909C2 (sv) | 2001-09-06 | 2001-09-06 | Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor |
TW091105743A TW556332B (en) | 2001-09-06 | 2002-03-25 | An arrangement for ESD protection of an integrated circuit |
PCT/SE2002/001535 WO2003021737A1 (fr) | 2001-09-06 | 2002-08-28 | Dispositif de protection contre les pointes de tension d'un circuit integre |
CNA028175565A CN1554141A (zh) | 2001-09-06 | 2002-08-28 | 集成电路的静电放电保护布线 |
EP02753324A EP1423898B1 (fr) | 2001-09-06 | 2002-08-28 | Dispositif de protection contre les pointes de tension d'un circuit integre |
US10/791,389 US7019382B2 (en) | 2001-09-06 | 2004-03-02 | Arrangement for ESD protection of an integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0102960A SE522909C2 (sv) | 2001-09-06 | 2001-09-06 | Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor |
Publications (3)
Publication Number | Publication Date |
---|---|
SE0102960D0 SE0102960D0 (sv) | 2001-09-06 |
SE0102960L SE0102960L (sv) | 2003-03-07 |
SE522909C2 true SE522909C2 (sv) | 2004-03-16 |
Family
ID=20285244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0102960A SE522909C2 (sv) | 2001-09-06 | 2001-09-06 | Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor |
Country Status (6)
Country | Link |
---|---|
US (1) | US7019382B2 (fr) |
EP (1) | EP1423898B1 (fr) |
CN (1) | CN1554141A (fr) |
SE (1) | SE522909C2 (fr) |
TW (1) | TW556332B (fr) |
WO (1) | WO2003021737A1 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE0302296D0 (sv) | 2003-08-27 | 2003-08-27 | Infineon Technologies Ag | Device for ESD protection of an integrated circuit |
US7164185B1 (en) * | 2004-02-02 | 2007-01-16 | Advanced Micro Devices, Inc. | Semiconductor component and method of manufacture |
KR20050089219A (ko) * | 2004-03-04 | 2005-09-08 | 주식회사 팬택앤큐리텔 | 정전기 보호 및 잡음 차단이 가능한 일렉트리트 콘덴서마이크로폰 |
EP1603162A1 (fr) * | 2004-05-28 | 2005-12-07 | Infineon Technologies AG | Dispositif de protection contre les decharges electrostatiques pour un circuit intégré |
DE102005014176B4 (de) * | 2005-03-29 | 2009-08-20 | Infineon Technologies Ag | Verfahren zum Erstellen einer Schutzanordnung zum Schutz eines Elektronikbausteins vor elektrostatischen Entladungen und entsprechend ausgebildeter Elektronikbaustein |
US8693151B2 (en) * | 2009-01-29 | 2014-04-08 | Panasonic Corporation | Differential transmission circuit and electronic device provided with the same |
US8619397B2 (en) * | 2011-01-31 | 2013-12-31 | Fairchild Semiconductor Corporation | Non-linear power management device for input power protection |
CN103378088B (zh) * | 2012-04-28 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 一种多晶硅二极管静电保护结构 |
US9696736B2 (en) | 2013-03-15 | 2017-07-04 | Fairchild Semiconductor Corporation | Two-terminal current limiter and apparatus thereof |
US9172239B2 (en) | 2013-03-15 | 2015-10-27 | Fairchild Semiconductor Corporation | Methods and apparatus related to a precision input power protection device |
US9679890B2 (en) | 2013-08-09 | 2017-06-13 | Fairchild Semiconductor Corporation | Junction-less insulated gate current limiter device |
US9735147B2 (en) | 2014-09-15 | 2017-08-15 | Fairchild Semiconductor Corporation | Fast and stable ultra low drop-out (LDO) voltage clamp device |
US9653913B2 (en) * | 2015-02-17 | 2017-05-16 | Littelfuse, Inc. | Resistance change device providing overcurrent protection |
CN111128496B (zh) * | 2019-12-26 | 2021-09-07 | 亨斯迈(杭州)电力技术有限公司 | 一种大功率分压器件及制作方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5928370A (ja) * | 1982-08-09 | 1984-02-15 | Toshiba Corp | 半導体装置 |
JPS6144454A (ja) * | 1984-08-09 | 1986-03-04 | Fujitsu Ltd | 半導体装置 |
US4806999A (en) * | 1985-09-30 | 1989-02-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Area efficient input protection |
GB8621839D0 (en) * | 1986-09-10 | 1986-10-15 | British Aerospace | Electrostatic discharge protection circuit |
JPH01199403A (ja) * | 1987-10-23 | 1989-08-10 | Mitsubishi Electric Corp | バリスタ |
US5196913A (en) * | 1988-07-11 | 1993-03-23 | Samsung Electronics Co., Ltd. | Input protection device for improving of delay time on input stage in semi-conductor devices |
ES2055795T3 (es) | 1988-11-22 | 1994-09-01 | At & T Corp | Separador de salida de circuito integrado que tiene proteccion de esd mejorada. |
US5124578A (en) * | 1990-10-01 | 1992-06-23 | Rockwell International Corporation | Receiver designed with large output drive and having unique input protection circuit |
JP2989406B2 (ja) * | 1993-01-29 | 1999-12-13 | シャープ株式会社 | 半導体装置用プリプレーテッドフレーム及びその製造方法 |
KR970009101B1 (ko) * | 1993-08-18 | 1997-06-05 | 엘지반도체 주식회사 | 정전기(esd) 보호회로의 제조 방법 |
US5615073A (en) * | 1995-06-22 | 1997-03-25 | National Semiconductor Corporation | Electrostatic discharge protection apparatus |
US5751507A (en) * | 1995-08-15 | 1998-05-12 | Cypress Semiconductor Corporation | KSD protection apparatus having floating EDS bus and semiconductor structure |
US5803343A (en) | 1995-10-30 | 1998-09-08 | Delco Electronics Corp. | Solder process for enhancing reliability of multilayer hybrid circuits |
US5808343A (en) * | 1996-09-20 | 1998-09-15 | Integrated Device Technology, Inc. | Input structure for digital integrated circuits |
US6037636A (en) * | 1998-05-19 | 2000-03-14 | National Semiconductor Corporation | Electrostatic discharge protection circuit and method |
US6292046B1 (en) * | 1998-09-30 | 2001-09-18 | Conexant Systems, Inc. | CMOS electrostatic discharge protection circuit with minimal loading for high speed circuit applications |
DE19942023A1 (de) * | 1999-09-03 | 2001-03-08 | Moeller Gmbh | Schaltungsanordnung für den Überspannungsschutz eines Leistungstransistors zur Steuerung einer induktiven Last |
US6432282B1 (en) * | 2000-03-02 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus for supplying electricity uniformly to a workpiece |
US6331726B1 (en) * | 2000-03-21 | 2001-12-18 | International Business Machines Corporation | SOI voltage dependent negative-saturation-resistance resistor ballasting element for ESD protection of receivers and driver circuitry |
TW449842B (en) * | 2000-07-13 | 2001-08-11 | United Microelectronics Corp | SOI electrostatic discharge protection circuit |
US6455919B1 (en) * | 2001-03-19 | 2002-09-24 | International Business Machines Corporation | Internally ballasted silicon germanium transistor |
-
2001
- 2001-09-06 SE SE0102960A patent/SE522909C2/sv unknown
-
2002
- 2002-03-25 TW TW091105743A patent/TW556332B/zh not_active IP Right Cessation
- 2002-08-28 WO PCT/SE2002/001535 patent/WO2003021737A1/fr not_active Application Discontinuation
- 2002-08-28 EP EP02753324A patent/EP1423898B1/fr not_active Expired - Fee Related
- 2002-08-28 CN CNA028175565A patent/CN1554141A/zh active Pending
-
2004
- 2004-03-02 US US10/791,389 patent/US7019382B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1554141A (zh) | 2004-12-08 |
EP1423898B1 (fr) | 2012-02-22 |
EP1423898A1 (fr) | 2004-06-02 |
TW556332B (en) | 2003-10-01 |
SE0102960D0 (sv) | 2001-09-06 |
WO2003021737A1 (fr) | 2003-03-13 |
US20040164355A1 (en) | 2004-08-26 |
SE0102960L (sv) | 2003-03-07 |
US7019382B2 (en) | 2006-03-28 |
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