SE522909C2 - Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor - Google Patents

Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor

Info

Publication number
SE522909C2
SE522909C2 SE0102960A SE0102960A SE522909C2 SE 522909 C2 SE522909 C2 SE 522909C2 SE 0102960 A SE0102960 A SE 0102960A SE 0102960 A SE0102960 A SE 0102960A SE 522909 C2 SE522909 C2 SE 522909C2
Authority
SE
Sweden
Prior art keywords
varistor
connection point
toad
resistance
varistom
Prior art date
Application number
SE0102960A
Other languages
English (en)
Swedish (sv)
Other versions
SE0102960D0 (sv
SE0102960L (sv
Inventor
Andrej Litwin
Ola Pettersson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE0102960A priority Critical patent/SE522909C2/sv
Publication of SE0102960D0 publication Critical patent/SE0102960D0/xx
Priority to TW091105743A priority patent/TW556332B/zh
Priority to PCT/SE2002/001535 priority patent/WO2003021737A1/fr
Priority to CNA028175565A priority patent/CN1554141A/zh
Priority to EP02753324A priority patent/EP1423898B1/fr
Publication of SE0102960L publication Critical patent/SE0102960L/xx
Priority to US10/791,389 priority patent/US7019382B2/en
Publication of SE522909C2 publication Critical patent/SE522909C2/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/042Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Thermistors And Varistors (AREA)
  • Bipolar Integrated Circuits (AREA)
SE0102960A 2001-09-06 2001-09-06 Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor SE522909C2 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE0102960A SE522909C2 (sv) 2001-09-06 2001-09-06 Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor
TW091105743A TW556332B (en) 2001-09-06 2002-03-25 An arrangement for ESD protection of an integrated circuit
PCT/SE2002/001535 WO2003021737A1 (fr) 2001-09-06 2002-08-28 Dispositif de protection contre les pointes de tension d'un circuit integre
CNA028175565A CN1554141A (zh) 2001-09-06 2002-08-28 集成电路的静电放电保护布线
EP02753324A EP1423898B1 (fr) 2001-09-06 2002-08-28 Dispositif de protection contre les pointes de tension d'un circuit integre
US10/791,389 US7019382B2 (en) 2001-09-06 2004-03-02 Arrangement for ESD protection of an integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0102960A SE522909C2 (sv) 2001-09-06 2001-09-06 Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor

Publications (3)

Publication Number Publication Date
SE0102960D0 SE0102960D0 (sv) 2001-09-06
SE0102960L SE0102960L (sv) 2003-03-07
SE522909C2 true SE522909C2 (sv) 2004-03-16

Family

ID=20285244

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0102960A SE522909C2 (sv) 2001-09-06 2001-09-06 Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor

Country Status (6)

Country Link
US (1) US7019382B2 (fr)
EP (1) EP1423898B1 (fr)
CN (1) CN1554141A (fr)
SE (1) SE522909C2 (fr)
TW (1) TW556332B (fr)
WO (1) WO2003021737A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE0302296D0 (sv) 2003-08-27 2003-08-27 Infineon Technologies Ag Device for ESD protection of an integrated circuit
US7164185B1 (en) * 2004-02-02 2007-01-16 Advanced Micro Devices, Inc. Semiconductor component and method of manufacture
KR20050089219A (ko) * 2004-03-04 2005-09-08 주식회사 팬택앤큐리텔 정전기 보호 및 잡음 차단이 가능한 일렉트리트 콘덴서마이크로폰
EP1603162A1 (fr) * 2004-05-28 2005-12-07 Infineon Technologies AG Dispositif de protection contre les decharges electrostatiques pour un circuit intégré
DE102005014176B4 (de) * 2005-03-29 2009-08-20 Infineon Technologies Ag Verfahren zum Erstellen einer Schutzanordnung zum Schutz eines Elektronikbausteins vor elektrostatischen Entladungen und entsprechend ausgebildeter Elektronikbaustein
US8693151B2 (en) * 2009-01-29 2014-04-08 Panasonic Corporation Differential transmission circuit and electronic device provided with the same
US8619397B2 (en) * 2011-01-31 2013-12-31 Fairchild Semiconductor Corporation Non-linear power management device for input power protection
CN103378088B (zh) * 2012-04-28 2015-10-14 上海华虹宏力半导体制造有限公司 一种多晶硅二极管静电保护结构
US9696736B2 (en) 2013-03-15 2017-07-04 Fairchild Semiconductor Corporation Two-terminal current limiter and apparatus thereof
US9172239B2 (en) 2013-03-15 2015-10-27 Fairchild Semiconductor Corporation Methods and apparatus related to a precision input power protection device
US9679890B2 (en) 2013-08-09 2017-06-13 Fairchild Semiconductor Corporation Junction-less insulated gate current limiter device
US9735147B2 (en) 2014-09-15 2017-08-15 Fairchild Semiconductor Corporation Fast and stable ultra low drop-out (LDO) voltage clamp device
US9653913B2 (en) * 2015-02-17 2017-05-16 Littelfuse, Inc. Resistance change device providing overcurrent protection
CN111128496B (zh) * 2019-12-26 2021-09-07 亨斯迈(杭州)电力技术有限公司 一种大功率分压器件及制作方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928370A (ja) * 1982-08-09 1984-02-15 Toshiba Corp 半導体装置
JPS6144454A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置
US4806999A (en) * 1985-09-30 1989-02-21 American Telephone And Telegraph Company, At&T Bell Laboratories Area efficient input protection
GB8621839D0 (en) * 1986-09-10 1986-10-15 British Aerospace Electrostatic discharge protection circuit
JPH01199403A (ja) * 1987-10-23 1989-08-10 Mitsubishi Electric Corp バリスタ
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
ES2055795T3 (es) 1988-11-22 1994-09-01 At & T Corp Separador de salida de circuito integrado que tiene proteccion de esd mejorada.
US5124578A (en) * 1990-10-01 1992-06-23 Rockwell International Corporation Receiver designed with large output drive and having unique input protection circuit
JP2989406B2 (ja) * 1993-01-29 1999-12-13 シャープ株式会社 半導体装置用プリプレーテッドフレーム及びその製造方法
KR970009101B1 (ko) * 1993-08-18 1997-06-05 엘지반도체 주식회사 정전기(esd) 보호회로의 제조 방법
US5615073A (en) * 1995-06-22 1997-03-25 National Semiconductor Corporation Electrostatic discharge protection apparatus
US5751507A (en) * 1995-08-15 1998-05-12 Cypress Semiconductor Corporation KSD protection apparatus having floating EDS bus and semiconductor structure
US5803343A (en) 1995-10-30 1998-09-08 Delco Electronics Corp. Solder process for enhancing reliability of multilayer hybrid circuits
US5808343A (en) * 1996-09-20 1998-09-15 Integrated Device Technology, Inc. Input structure for digital integrated circuits
US6037636A (en) * 1998-05-19 2000-03-14 National Semiconductor Corporation Electrostatic discharge protection circuit and method
US6292046B1 (en) * 1998-09-30 2001-09-18 Conexant Systems, Inc. CMOS electrostatic discharge protection circuit with minimal loading for high speed circuit applications
DE19942023A1 (de) * 1999-09-03 2001-03-08 Moeller Gmbh Schaltungsanordnung für den Überspannungsschutz eines Leistungstransistors zur Steuerung einer induktiven Last
US6432282B1 (en) * 2000-03-02 2002-08-13 Applied Materials, Inc. Method and apparatus for supplying electricity uniformly to a workpiece
US6331726B1 (en) * 2000-03-21 2001-12-18 International Business Machines Corporation SOI voltage dependent negative-saturation-resistance resistor ballasting element for ESD protection of receivers and driver circuitry
TW449842B (en) * 2000-07-13 2001-08-11 United Microelectronics Corp SOI electrostatic discharge protection circuit
US6455919B1 (en) * 2001-03-19 2002-09-24 International Business Machines Corporation Internally ballasted silicon germanium transistor

Also Published As

Publication number Publication date
CN1554141A (zh) 2004-12-08
EP1423898B1 (fr) 2012-02-22
EP1423898A1 (fr) 2004-06-02
TW556332B (en) 2003-10-01
SE0102960D0 (sv) 2001-09-06
WO2003021737A1 (fr) 2003-03-13
US20040164355A1 (en) 2004-08-26
SE0102960L (sv) 2003-03-07
US7019382B2 (en) 2006-03-28

Similar Documents

Publication Publication Date Title
US8637899B2 (en) Method and apparatus for protection and high voltage isolation of low voltage communication interface terminals
SE522909C2 (sv) Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor
EP2248172B1 (fr) Protection contre les decharges electrostatiques declenchee par une resistance
US7186594B2 (en) High voltage ESD-protection structure
CN100459130C (zh) 半导体结构及其应用、尤其是限制过电压的应用
US9093272B2 (en) Methods of forming electronic elements with ESD protection
WO1993012544A1 (fr) Structure et circuit de protection comprenant un redresseur au silicium commande a tension de declenchement reduite
US20200027873A1 (en) Transient voltage suppression device with improved electrostatic discharge (esd) robustness
KR910003834B1 (ko) Mos트랜지스터회로
US10074642B2 (en) Crowbar device for voltage transient circuit protection
US9536869B2 (en) Electrostatic discharge protection apparatus and method therefor
EP0472592B1 (fr) Structure et dispositif de protection muni d'un redresseur au silicium commande a basse tension de declenchement
TW202044540A (zh) 具有二極體及矽控整流器的半導體元件
EP0202646B1 (fr) Dispositif de protection d'entrée
CN213042916U (zh) 一种电子装置、一种静电放电保护装置和一种半导体装置
EP0730300B1 (fr) Dispositif pour la protection d'un circuit intégré contre des décharges électrostatiques
KR101699616B1 (ko) 정전기 방전 보호소자
CN103247616A (zh) 静电放电保护装置
KR20180085580A (ko) 정전기 방전 보호소자
KR102463902B1 (ko) 다이오드를 내장한 mos 구조의 사이리스터 소자
CN113964115A (zh) 静电放电保护半导体结构及其制造方法
US4207584A (en) Safety device for protecting semiconductor components against excessive voltage rise rates
JPS61225875A (ja) サ−ジ吸収用半導体装置