SE521230C2 - Optisk registreringsapparat och metod därav - Google Patents

Optisk registreringsapparat och metod därav

Info

Publication number
SE521230C2
SE521230C2 SE0202949A SE0202949A SE521230C2 SE 521230 C2 SE521230 C2 SE 521230C2 SE 0202949 A SE0202949 A SE 0202949A SE 0202949 A SE0202949 A SE 0202949A SE 521230 C2 SE521230 C2 SE 521230C2
Authority
SE
Sweden
Prior art keywords
light
modulated
spatial
modulator
image
Prior art date
Application number
SE0202949A
Other languages
English (en)
Swedish (sv)
Other versions
SE0202949D0 (sv
SE0202949L (sv
Inventor
Yukio Taniguchi
Original Assignee
Ekisho Sentan Gijutsu Kaihatsu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ekisho Sentan Gijutsu Kaihatsu filed Critical Ekisho Sentan Gijutsu Kaihatsu
Publication of SE0202949D0 publication Critical patent/SE0202949D0/xx
Publication of SE0202949L publication Critical patent/SE0202949L/xx
Publication of SE521230C2 publication Critical patent/SE521230C2/sv

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SE0202949A 2001-10-19 2002-10-07 Optisk registreringsapparat och metod därav SE521230C2 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001322598A JP3881865B2 (ja) 2001-10-19 2001-10-19 光学的な記録装置及び方法並びに露光装置及び方法

Publications (3)

Publication Number Publication Date
SE0202949D0 SE0202949D0 (sv) 2002-10-07
SE0202949L SE0202949L (sv) 2003-04-20
SE521230C2 true SE521230C2 (sv) 2003-10-14

Family

ID=19139621

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0202949A SE521230C2 (sv) 2001-10-19 2002-10-07 Optisk registreringsapparat och metod därav

Country Status (6)

Country Link
US (1) US6900827B2 (https=)
JP (1) JP3881865B2 (https=)
KR (1) KR100478625B1 (https=)
CN (1) CN1238767C (https=)
DE (1) DE10243559B4 (https=)
SE (1) SE521230C2 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794100B2 (en) * 2001-08-30 2004-09-21 Micron Technology, Inc. Method for controlling radiation beam intensity directed to microlithographic substrates
US6784975B2 (en) * 2001-08-30 2004-08-31 Micron Technology, Inc. Method and apparatus for irradiating a microlithographic substrate
CA2581660A1 (en) * 2003-09-26 2005-04-07 Tidal Photonics, Inc. Apparatus and methods relating to precision control of illumination exposure
US6894765B2 (en) * 2003-10-14 2005-05-17 Micron Technology, Inc. Methods and systems for controlling radiation beam characteristics for microlithographic processing
JP2007522671A (ja) * 2004-02-25 2007-08-09 マイクロニック レーザー システムズ アクチボラゲット 光マスクレスリソグラフィにおいてパターンを露光し、マスクをエミュレートする方法
JP4750396B2 (ja) * 2004-09-27 2011-08-17 キヤノン株式会社 露光装置及びデバイス製造方法
US7446855B2 (en) * 2005-07-25 2008-11-04 Micron Technology, Inc Methods and apparatuses for configuring radiation in microlithographic processing of workpieces using an adjustment structure
US20070153249A1 (en) * 2005-12-20 2007-07-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using multiple exposures and multiple exposure types
US7838178B2 (en) * 2007-08-13 2010-11-23 Micron Technology, Inc. Masks for microlithography and methods of making and using such masks
WO2009026947A1 (en) 2007-08-30 2009-03-05 Carl Zeiss Smt Ag Illumination system for illuminating a mask in a microlithographic projection exposure apparatus
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US8379187B2 (en) * 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
KR101010263B1 (ko) * 2008-05-31 2011-01-26 최리나 걸레가 부착된 실내화
US8368994B2 (en) * 2008-06-28 2013-02-05 Alces Technology, Inc. Scanned, one-dimensional, phased-array display system
WO2010024106A1 (ja) * 2008-08-28 2010-03-04 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP2010182934A (ja) * 2009-02-06 2010-08-19 Dainippon Screen Mfg Co Ltd 描画装置および描画方法
JP5532213B2 (ja) * 2009-12-07 2014-06-25 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP6137485B2 (ja) * 2012-01-18 2017-05-31 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP6193963B2 (ja) * 2015-12-18 2017-09-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置においてマスクを照明するための照明システム
US10489924B2 (en) * 2016-03-30 2019-11-26 Samsung Electronics Co., Ltd. Structured light generator and object recognition apparatus including the same
TWI836287B (zh) * 2021-11-04 2024-03-21 邱俊榮 曝光裝置與曝光方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE425160A (https=) 1936-12-12
US4205348A (en) * 1978-07-05 1980-05-27 Xerox Corporation Laser scanning utilizing facet tracking and acousto pulse imaging techniques
JPH04293013A (ja) * 1991-03-22 1992-10-16 Seiko Epson Corp 光学装置
EP0657760A1 (en) * 1993-09-15 1995-06-14 Texas Instruments Incorporated Image simulation and projection system
US5539567A (en) * 1994-06-16 1996-07-23 Texas Instruments Incorporated Photolithographic technique and illuminator using real-time addressable phase shift light shift
JPH0822939A (ja) * 1994-07-05 1996-01-23 Fujitsu Ltd パターン露光方法及びパターン露光装置
US6229649B1 (en) * 1994-10-04 2001-05-08 The United States Of America As Represented By The Secretary Of The Air Force Pseudo deconvolution method of recovering a distorted optical image
JP3594384B2 (ja) 1995-12-08 2004-11-24 ソニー株式会社 半導体露光装置、投影露光装置及び回路パターン製造方法
US5757505A (en) * 1996-02-16 1998-05-26 Nikon Corporation Exposure apparatus
US5923359A (en) * 1997-03-14 1999-07-13 Cymbolic Sciences International Inc. Internal drum scophony raster recording device
US5754514A (en) * 1996-10-08 1998-05-19 Polaroid Corporation Phase controlled evanescent field systems and methods for optical recording and retrieval
US6291110B1 (en) * 1997-06-27 2001-09-18 Pixelligent Technologies Llc Methods for transferring a two-dimensional programmable exposure pattern for photolithography
SE9800665D0 (sv) 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
HU9801029D0 (en) * 1998-05-05 1998-06-29 Optilink Ab Method and system for recording information on a holographic card
JP2000021742A (ja) * 1998-06-30 2000-01-21 Canon Inc 露光方法および露光装置
JP4199332B2 (ja) 1998-07-31 2008-12-17 凸版印刷株式会社 ホログラムの作製方法
JP2001168003A (ja) * 1999-12-06 2001-06-22 Olympus Optical Co Ltd 露光装置
JP2001185476A (ja) * 1999-12-27 2001-07-06 Mitsubishi Electric Corp 投影露光装置
JP3762186B2 (ja) 2000-04-10 2006-04-05 株式会社フジクラ 光伝送路及び光線路監視装置付き光伝送路
KR100603523B1 (ko) 2000-12-29 2006-07-24 엘지전자 주식회사 진공청소기
US6577428B2 (en) * 2001-03-27 2003-06-10 The Regents Of The University Of California Optical electric-field pattern generator

Also Published As

Publication number Publication date
CN1412621A (zh) 2003-04-23
KR100478625B1 (ko) 2005-03-28
KR20030032837A (ko) 2003-04-26
US20030076404A1 (en) 2003-04-24
CN1238767C (zh) 2006-01-25
JP2003133201A (ja) 2003-05-09
DE10243559A1 (de) 2003-05-08
SE0202949D0 (sv) 2002-10-07
JP3881865B2 (ja) 2007-02-14
SE0202949L (sv) 2003-04-20
US6900827B2 (en) 2005-05-31
DE10243559B4 (de) 2007-02-01

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