CN1238767C - 光学记录器及其记录方法 - Google Patents

光学记录器及其记录方法 Download PDF

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Publication number
CN1238767C
CN1238767C CNB021438196A CN02143819A CN1238767C CN 1238767 C CN1238767 C CN 1238767C CN B021438196 A CNB021438196 A CN B021438196A CN 02143819 A CN02143819 A CN 02143819A CN 1238767 C CN1238767 C CN 1238767C
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CN
China
Prior art keywords
light
modulated
spatial
imaging
modulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021438196A
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English (en)
Chinese (zh)
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CN1412621A (zh
Inventor
谷口幸夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Liguid Crystal Advanced Technology Development Center K K
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Liguid Crystal Advanced Technology Development Center K K
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Publication date
Application filed by Liguid Crystal Advanced Technology Development Center K K filed Critical Liguid Crystal Advanced Technology Development Center K K
Publication of CN1412621A publication Critical patent/CN1412621A/zh
Application granted granted Critical
Publication of CN1238767C publication Critical patent/CN1238767C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB021438196A 2001-10-19 2002-09-25 光学记录器及其记录方法 Expired - Fee Related CN1238767C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001322598A JP3881865B2 (ja) 2001-10-19 2001-10-19 光学的な記録装置及び方法並びに露光装置及び方法
JP2001322598 2001-10-19
JP2001-322598 2001-10-19

Publications (2)

Publication Number Publication Date
CN1412621A CN1412621A (zh) 2003-04-23
CN1238767C true CN1238767C (zh) 2006-01-25

Family

ID=19139621

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021438196A Expired - Fee Related CN1238767C (zh) 2001-10-19 2002-09-25 光学记录器及其记录方法

Country Status (6)

Country Link
US (1) US6900827B2 (https=)
JP (1) JP3881865B2 (https=)
KR (1) KR100478625B1 (https=)
CN (1) CN1238767C (https=)
DE (1) DE10243559B4 (https=)
SE (1) SE521230C2 (https=)

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US6794100B2 (en) * 2001-08-30 2004-09-21 Micron Technology, Inc. Method for controlling radiation beam intensity directed to microlithographic substrates
US6784975B2 (en) * 2001-08-30 2004-08-31 Micron Technology, Inc. Method and apparatus for irradiating a microlithographic substrate
CA2581660A1 (en) * 2003-09-26 2005-04-07 Tidal Photonics, Inc. Apparatus and methods relating to precision control of illumination exposure
US6894765B2 (en) * 2003-10-14 2005-05-17 Micron Technology, Inc. Methods and systems for controlling radiation beam characteristics for microlithographic processing
JP2007522671A (ja) * 2004-02-25 2007-08-09 マイクロニック レーザー システムズ アクチボラゲット 光マスクレスリソグラフィにおいてパターンを露光し、マスクをエミュレートする方法
JP4750396B2 (ja) * 2004-09-27 2011-08-17 キヤノン株式会社 露光装置及びデバイス製造方法
US7446855B2 (en) * 2005-07-25 2008-11-04 Micron Technology, Inc Methods and apparatuses for configuring radiation in microlithographic processing of workpieces using an adjustment structure
US20070153249A1 (en) * 2005-12-20 2007-07-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using multiple exposures and multiple exposure types
US7838178B2 (en) * 2007-08-13 2010-11-23 Micron Technology, Inc. Masks for microlithography and methods of making and using such masks
WO2009026947A1 (en) 2007-08-30 2009-03-05 Carl Zeiss Smt Ag Illumination system for illuminating a mask in a microlithographic projection exposure apparatus
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US8379187B2 (en) * 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
KR101010263B1 (ko) * 2008-05-31 2011-01-26 최리나 걸레가 부착된 실내화
US8368994B2 (en) * 2008-06-28 2013-02-05 Alces Technology, Inc. Scanned, one-dimensional, phased-array display system
WO2010024106A1 (ja) * 2008-08-28 2010-03-04 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP2010182934A (ja) * 2009-02-06 2010-08-19 Dainippon Screen Mfg Co Ltd 描画装置および描画方法
JP5532213B2 (ja) * 2009-12-07 2014-06-25 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP6137485B2 (ja) * 2012-01-18 2017-05-31 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP6193963B2 (ja) * 2015-12-18 2017-09-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置においてマスクを照明するための照明システム
US10489924B2 (en) * 2016-03-30 2019-11-26 Samsung Electronics Co., Ltd. Structured light generator and object recognition apparatus including the same
TWI836287B (zh) * 2021-11-04 2024-03-21 邱俊榮 曝光裝置與曝光方法

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JPH04293013A (ja) * 1991-03-22 1992-10-16 Seiko Epson Corp 光学装置
EP0657760A1 (en) * 1993-09-15 1995-06-14 Texas Instruments Incorporated Image simulation and projection system
US5539567A (en) * 1994-06-16 1996-07-23 Texas Instruments Incorporated Photolithographic technique and illuminator using real-time addressable phase shift light shift
JPH0822939A (ja) * 1994-07-05 1996-01-23 Fujitsu Ltd パターン露光方法及びパターン露光装置
US6229649B1 (en) * 1994-10-04 2001-05-08 The United States Of America As Represented By The Secretary Of The Air Force Pseudo deconvolution method of recovering a distorted optical image
JP3594384B2 (ja) 1995-12-08 2004-11-24 ソニー株式会社 半導体露光装置、投影露光装置及び回路パターン製造方法
US5757505A (en) * 1996-02-16 1998-05-26 Nikon Corporation Exposure apparatus
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US5754514A (en) * 1996-10-08 1998-05-19 Polaroid Corporation Phase controlled evanescent field systems and methods for optical recording and retrieval
US6291110B1 (en) * 1997-06-27 2001-09-18 Pixelligent Technologies Llc Methods for transferring a two-dimensional programmable exposure pattern for photolithography
SE9800665D0 (sv) 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
HU9801029D0 (en) * 1998-05-05 1998-06-29 Optilink Ab Method and system for recording information on a holographic card
JP2000021742A (ja) * 1998-06-30 2000-01-21 Canon Inc 露光方法および露光装置
JP4199332B2 (ja) 1998-07-31 2008-12-17 凸版印刷株式会社 ホログラムの作製方法
JP2001168003A (ja) * 1999-12-06 2001-06-22 Olympus Optical Co Ltd 露光装置
JP2001185476A (ja) * 1999-12-27 2001-07-06 Mitsubishi Electric Corp 投影露光装置
JP3762186B2 (ja) 2000-04-10 2006-04-05 株式会社フジクラ 光伝送路及び光線路監視装置付き光伝送路
KR100603523B1 (ko) 2000-12-29 2006-07-24 엘지전자 주식회사 진공청소기
US6577428B2 (en) * 2001-03-27 2003-06-10 The Regents Of The University Of California Optical electric-field pattern generator

Also Published As

Publication number Publication date
CN1412621A (zh) 2003-04-23
KR100478625B1 (ko) 2005-03-28
KR20030032837A (ko) 2003-04-26
US20030076404A1 (en) 2003-04-24
JP2003133201A (ja) 2003-05-09
DE10243559A1 (de) 2003-05-08
SE0202949D0 (sv) 2002-10-07
SE521230C2 (sv) 2003-10-14
JP3881865B2 (ja) 2007-02-14
SE0202949L (sv) 2003-04-20
US6900827B2 (en) 2005-05-31
DE10243559B4 (de) 2007-02-01

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Termination date: 20091026