SE466855B - Apparat foer bildande av reaktiv belaeggningsfilm paa en foer belaeggning avsedd kropp - Google Patents

Apparat foer bildande av reaktiv belaeggningsfilm paa en foer belaeggning avsedd kropp

Info

Publication number
SE466855B
SE466855B SE8801615A SE8801615A SE466855B SE 466855 B SE466855 B SE 466855B SE 8801615 A SE8801615 A SE 8801615A SE 8801615 A SE8801615 A SE 8801615A SE 466855 B SE466855 B SE 466855B
Authority
SE
Sweden
Prior art keywords
coating film
reactive coating
magnetic field
electron
electron beams
Prior art date
Application number
SE8801615A
Other languages
English (en)
Swedish (sv)
Other versions
SE8801615D0 (sv
SE8801615L (sv
Inventor
K Watanabe
K Saito
Y Yuchi
K Inagawa
Original Assignee
Ulvac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Corp filed Critical Ulvac Corp
Publication of SE8801615D0 publication Critical patent/SE8801615D0/xx
Publication of SE8801615L publication Critical patent/SE8801615L/
Publication of SE466855B publication Critical patent/SE466855B/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0647—Boron nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
SE8801615A 1987-05-01 1988-04-29 Apparat foer bildande av reaktiv belaeggningsfilm paa en foer belaeggning avsedd kropp SE466855B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62106427A JPS63274762A (ja) 1987-05-01 1987-05-01 反応蒸着膜の形成装置

Publications (3)

Publication Number Publication Date
SE8801615D0 SE8801615D0 (sv) 1988-04-29
SE8801615L SE8801615L (sv) 1988-11-02
SE466855B true SE466855B (sv) 1992-04-13

Family

ID=14433360

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8801615A SE466855B (sv) 1987-05-01 1988-04-29 Apparat foer bildande av reaktiv belaeggningsfilm paa en foer belaeggning avsedd kropp

Country Status (4)

Country Link
US (1) US4941430A (nl)
JP (1) JPS63274762A (nl)
DE (1) DE3814652A1 (nl)
SE (1) SE466855B (nl)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450125B1 (de) * 1990-04-06 1994-10-26 Siemens Aktiengesellschaft Verfahren zur Herstellung von mikrokristallin kubischen Bornitridschichten
DE4020158C2 (de) * 1990-06-25 1998-10-08 Leybold Ag Vorrichtung zum Beschichten von Substraten
DE4026367A1 (de) * 1990-06-25 1992-03-12 Leybold Ag Vorrichtung zum beschichten von substraten
US5296119A (en) * 1990-11-26 1994-03-22 Trustees Of Boston University Defect-induced control of the structure of boron nitride
WO1992009717A1 (en) * 1990-11-26 1992-06-11 Moustakas Theodore D Defect-induced control of the structure of boron nitride
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US6953703B2 (en) * 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
IT1279238B1 (it) * 1995-06-19 1997-12-09 Galileo Vacuum Tec Spa Sistema continuo di evaporazione con ossidazione assistita da plasma, per depositare sotto vuoto ossidi di metalli su pellicole plastiche
CH690857A5 (de) * 1995-07-04 2001-02-15 Erich Bergmann Anlage zur plasmaunterstützten physikalischen Hochvakuumbedampfung von Werkstücken mit verschleissfesten Schichten und Verfahren zur Durchführung in dieser Anlage
US5863831A (en) * 1995-08-14 1999-01-26 Advanced Materials Engineering Research, Inc. Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility
GB2323855B (en) * 1997-04-01 2002-06-05 Ion Coat Ltd Method and apparatus for depositing a coating on a conductive substrate
US5855745A (en) * 1997-04-23 1999-01-05 Sierra Applied Sciences, Inc. Plasma processing system utilizing combined anode/ ion source
US6368678B1 (en) * 1998-05-13 2002-04-09 Terry Bluck Plasma processing system and method
DE19841012C1 (de) * 1998-09-08 2000-01-13 Fraunhofer Ges Forschung Einrichtung zum plasmaaktivierten Bedampfen im Vakuum
US6562705B1 (en) * 1999-10-26 2003-05-13 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing semiconductor element
WO2001090438A1 (en) * 2000-05-23 2001-11-29 University Of Virginia Patent Foundation A process and apparatus for plasma activated deposition in a vacuum
ATE450631T1 (de) 2001-09-10 2009-12-15 Univ Virginia Verfahren zum aufbringen von metalllegierungsüberzügen und überzogene komponente
WO2004027825A2 (en) * 2002-09-19 2004-04-01 Applied Process Technologies, Inc. Beam plasma source
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
US7038389B2 (en) * 2003-05-02 2006-05-02 Applied Process Technologies, Inc. Magnetron plasma source
TWI503433B (zh) * 2013-10-08 2015-10-11 不二越股份有限公司 成膜裝置及成膜方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3120609A (en) * 1961-05-04 1964-02-04 High Voltage Engineering Corp Enlargement of charged particle beams
US3437734A (en) * 1966-06-21 1969-04-08 Isofilm Intern Apparatus and method for effecting the restructuring of materials
US3562141A (en) * 1968-02-23 1971-02-09 John R Morley Vacuum vapor deposition utilizing low voltage electron beam
US3903421A (en) * 1972-12-18 1975-09-02 Siemens Ag Device for irradiation with energy rich electrons
JPS546877A (en) * 1977-06-17 1979-01-19 Shinko Seiki Method of forming colored coat over metal surface
US4281251A (en) * 1979-08-06 1981-07-28 Radiation Dynamics, Inc. Scanning beam deflection system and method
DE3050343C2 (de) * 1980-04-25 1985-06-27 Stanislav Petrovič Dmitriev Einrichtung zur Elektronenbestrahlung von Objekten
US4487162A (en) * 1980-11-25 1984-12-11 Cann Gordon L Magnetoplasmadynamic apparatus for the separation and deposition of materials
DD201359A1 (de) * 1981-07-01 1983-07-13 Eckhard Goernitz Einrichtung zur vakuumbedampfung
US4415420A (en) * 1983-02-07 1983-11-15 Applied Coatings International, Inc. Cubic boron nitride preparation
JPS59205470A (ja) * 1983-05-02 1984-11-21 Kowa Eng Kk 硬質被膜の形成装置及びその形成方法
JPS59226176A (ja) * 1983-06-02 1984-12-19 Sumitomo Electric Ind Ltd イオンプレ−テイング装置
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法
JPS60262964A (ja) * 1984-06-06 1985-12-26 Mitsubishi Electric Corp 化合物薄膜蒸着装置
JPS61183463A (ja) * 1985-02-06 1986-08-16 Yuugou Giken:Kk 球穀状プラズマ発生装置
JPS61183813A (ja) * 1985-02-08 1986-08-16 トヨタ自動車株式会社 導電膜の形成方法
JPH0233786B2 (ja) * 1985-03-07 1990-07-30 Ulvac Corp Kagobutsumakunokeiseihoho
JPS61284579A (ja) * 1985-06-11 1986-12-15 Matsushita Electric Ind Co Ltd プラズマ集中型ｃｖｄ装置
JPS6247472A (ja) * 1985-08-26 1987-03-02 Ulvac Corp 立方晶チツ化ホウ素膜の形成方法
JPS6277454A (ja) * 1985-09-30 1987-04-09 Ulvac Corp 立方晶窒化ホウ素膜の形成方法
US4777908A (en) * 1986-11-26 1988-10-18 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
DD267262A1 (de) * 1987-12-24 1989-04-26 Hochvakuum Dresden Veb Hohlkatodenbogenverdampfer und verfahren zum betreiben desselben
JP2912109B2 (ja) * 1993-02-19 1999-06-28 義正 笠倉 故紙利用の緩衝材、その製造法及び製造装置

Also Published As

Publication number Publication date
SE8801615D0 (sv) 1988-04-29
JPH0543785B2 (nl) 1993-07-02
JPS63274762A (ja) 1988-11-11
US4941430A (en) 1990-07-17
DE3814652C2 (nl) 1991-11-14
DE3814652A1 (de) 1988-11-10
SE8801615L (sv) 1988-11-02

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