SE414246B - Halvledardiod - Google Patents

Halvledardiod

Info

Publication number
SE414246B
SE414246B SE7601541A SE7601541A SE414246B SE 414246 B SE414246 B SE 414246B SE 7601541 A SE7601541 A SE 7601541A SE 7601541 A SE7601541 A SE 7601541A SE 414246 B SE414246 B SE 414246B
Authority
SE
Sweden
Prior art keywords
semiconductor diode
diode
semiconductor
Prior art date
Application number
SE7601541A
Other languages
English (en)
Swedish (sv)
Other versions
SE7601541L (sv
Inventor
H Benda
P Huber
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7601541L publication Critical patent/SE7601541L/xx
Publication of SE414246B publication Critical patent/SE414246B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
SE7601541A 1975-02-13 1976-02-11 Halvledardiod SE414246B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2506102A DE2506102C3 (de) 1975-02-13 1975-02-13 Halbleitergleichrichter

Publications (2)

Publication Number Publication Date
SE7601541L SE7601541L (sv) 1976-08-16
SE414246B true SE414246B (sv) 1980-07-14

Family

ID=5938817

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7601541A SE414246B (sv) 1975-02-13 1976-02-11 Halvledardiod

Country Status (7)

Country Link
US (1) US4074303A (en:Method)
JP (1) JPS51107071A (en:Method)
CA (1) CA1049661A (en:Method)
DE (1) DE2506102C3 (en:Method)
FR (1) FR2301097A1 (en:Method)
GB (1) GB1484218A (en:Method)
SE (1) SE414246B (en:Method)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2050694B (en) * 1979-05-07 1983-09-28 Nippon Telegraph & Telephone Electrode structure for a semiconductor device
IT1212767B (it) * 1983-07-29 1989-11-30 Ates Componenti Elettron Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione.
DE3631136A1 (de) * 1986-09-12 1988-03-24 Siemens Ag Diode mit weichem abrissverhalten
DE3939324A1 (de) * 1989-11-28 1991-05-29 Eupec Gmbh & Co Kg Leistungs-halbleiterbauelement mit emitterkurzschluessen
DE19843893A1 (de) * 1998-09-24 2000-04-06 Siemens Ag Leistungshalbleiterdiode
DE102004044141A1 (de) 2004-09-13 2006-03-30 Robert Bosch Gmbh Halbleiteranordnung zur Spannungsbegrenzung
US9385181B2 (en) 2014-01-23 2016-07-05 Infineon Technologies Ag Semiconductor diode and method of manufacturing a semiconductor diode
CN104659081A (zh) * 2015-03-09 2015-05-27 江苏中科君芯科技有限公司 改善恢复耐量的二极管结构
EP3891800A1 (en) 2018-12-03 2021-10-13 MACOM Technology Solutions Holdings, Inc. Pin diodes with multi-thickness intrinsic regions
CN113424317A (zh) 2019-02-12 2021-09-21 镁可微波技术有限公司 单片多i区二极管限制器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2971139A (en) * 1959-06-16 1961-02-07 Fairchild Semiconductor Semiconductor switching device
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3331000A (en) * 1963-10-18 1967-07-11 Gen Electric Gate turn off semiconductor switch having a composite gate region with different impurity concentrations
US3476992A (en) * 1967-12-26 1969-11-04 Westinghouse Electric Corp Geometry of shorted-cathode-emitter for low and high power thyristor
US3599061A (en) * 1969-09-30 1971-08-10 Usa Scr emitter short patterns
JPS4918279A (en:Method) * 1972-06-08 1974-02-18
JPS4940391A (en:Method) * 1972-08-28 1974-04-15

Also Published As

Publication number Publication date
CA1049661A (en) 1979-02-27
JPS51107071A (en:Method) 1976-09-22
US4074303A (en) 1978-02-14
DE2506102A1 (de) 1976-08-26
SE7601541L (sv) 1976-08-16
FR2301097B3 (en:Method) 1979-10-12
DE2506102B2 (de) 1981-07-02
GB1484218A (en) 1977-09-01
DE2506102C3 (de) 1982-03-25
FR2301097A1 (fr) 1976-09-10

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