JPS51107071A - - Google Patents
Info
- Publication number
- JPS51107071A JPS51107071A JP51014762A JP1476276A JPS51107071A JP S51107071 A JPS51107071 A JP S51107071A JP 51014762 A JP51014762 A JP 51014762A JP 1476276 A JP1476276 A JP 1476276A JP S51107071 A JPS51107071 A JP S51107071A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2506102A DE2506102C3 (de) | 1975-02-13 | 1975-02-13 | Halbleitergleichrichter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51107071A true JPS51107071A (en:Method) | 1976-09-22 |
Family
ID=5938817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51014762A Pending JPS51107071A (en:Method) | 1975-02-13 | 1976-02-13 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4074303A (en:Method) |
| JP (1) | JPS51107071A (en:Method) |
| CA (1) | CA1049661A (en:Method) |
| DE (1) | DE2506102C3 (en:Method) |
| FR (1) | FR2301097A1 (en:Method) |
| GB (1) | GB1484218A (en:Method) |
| SE (1) | SE414246B (en:Method) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2050694B (en) * | 1979-05-07 | 1983-09-28 | Nippon Telegraph & Telephone | Electrode structure for a semiconductor device |
| IT1212767B (it) * | 1983-07-29 | 1989-11-30 | Ates Componenti Elettron | Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione. |
| DE3631136A1 (de) * | 1986-09-12 | 1988-03-24 | Siemens Ag | Diode mit weichem abrissverhalten |
| DE3939324A1 (de) * | 1989-11-28 | 1991-05-29 | Eupec Gmbh & Co Kg | Leistungs-halbleiterbauelement mit emitterkurzschluessen |
| DE19843893A1 (de) * | 1998-09-24 | 2000-04-06 | Siemens Ag | Leistungshalbleiterdiode |
| DE102004044141A1 (de) | 2004-09-13 | 2006-03-30 | Robert Bosch Gmbh | Halbleiteranordnung zur Spannungsbegrenzung |
| US9385181B2 (en) | 2014-01-23 | 2016-07-05 | Infineon Technologies Ag | Semiconductor diode and method of manufacturing a semiconductor diode |
| CN104659081A (zh) * | 2015-03-09 | 2015-05-27 | 江苏中科君芯科技有限公司 | 改善恢复耐量的二极管结构 |
| EP3891800A1 (en) | 2018-12-03 | 2021-10-13 | MACOM Technology Solutions Holdings, Inc. | Pin diodes with multi-thickness intrinsic regions |
| CN113424317A (zh) | 2019-02-12 | 2021-09-21 | 镁可微波技术有限公司 | 单片多i区二极管限制器 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940391A (en:Method) * | 1972-08-28 | 1974-04-15 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2971139A (en) * | 1959-06-16 | 1961-02-07 | Fairchild Semiconductor | Semiconductor switching device |
| US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
| US3331000A (en) * | 1963-10-18 | 1967-07-11 | Gen Electric | Gate turn off semiconductor switch having a composite gate region with different impurity concentrations |
| US3476992A (en) * | 1967-12-26 | 1969-11-04 | Westinghouse Electric Corp | Geometry of shorted-cathode-emitter for low and high power thyristor |
| US3599061A (en) * | 1969-09-30 | 1971-08-10 | Usa | Scr emitter short patterns |
| JPS4918279A (en:Method) * | 1972-06-08 | 1974-02-18 |
-
1975
- 1975-02-13 DE DE2506102A patent/DE2506102C3/de not_active Expired
- 1975-10-30 GB GB44795/75A patent/GB1484218A/en not_active Expired
- 1975-12-23 CA CA242,417A patent/CA1049661A/en not_active Expired
-
1976
- 1976-01-20 US US05/650,626 patent/US4074303A/en not_active Expired - Lifetime
- 1976-02-09 FR FR7603425A patent/FR2301097A1/fr active Granted
- 1976-02-11 SE SE7601541A patent/SE414246B/xx unknown
- 1976-02-13 JP JP51014762A patent/JPS51107071A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940391A (en:Method) * | 1972-08-28 | 1974-04-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1049661A (en) | 1979-02-27 |
| US4074303A (en) | 1978-02-14 |
| DE2506102A1 (de) | 1976-08-26 |
| SE7601541L (sv) | 1976-08-16 |
| SE414246B (sv) | 1980-07-14 |
| FR2301097B3 (en:Method) | 1979-10-12 |
| DE2506102B2 (de) | 1981-07-02 |
| GB1484218A (en) | 1977-09-01 |
| DE2506102C3 (de) | 1982-03-25 |
| FR2301097A1 (fr) | 1976-09-10 |