DD136781A1 - Lichtaussendende halbleitereinrichtung - Google Patents

Lichtaussendende halbleitereinrichtung

Info

Publication number
DD136781A1
DD136781A1 DD78204486A DD20448678A DD136781A1 DD 136781 A1 DD136781 A1 DD 136781A1 DD 78204486 A DD78204486 A DD 78204486A DD 20448678 A DD20448678 A DD 20448678A DD 136781 A1 DD136781 A1 DD 136781A1
Authority
DD
German Democratic Republic
Prior art keywords
light
emitting semiconductor
emitting
semiconductor
Prior art date
Application number
DD78204486A
Other languages
English (en)
Inventor
Revaz A Charmakadze
Original Assignee
Revaz A Charmakadze
Chikovani Rafael I
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Revaz A Charmakadze, Chikovani Rafael I filed Critical Revaz A Charmakadze
Publication of DD136781A1 publication Critical patent/DD136781A1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004Devices characterised by their operation
    • H01L33/002Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/113Nitrides of boron or aluminum or gallium
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/15Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DD78204486A 1977-04-01 1978-03-30 Lichtaussendende halbleitereinrichtung DD136781A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU772468614A SU773795A1 (ru) 1977-04-01 1977-04-01 Светоизлучающий прибор

Publications (1)

Publication Number Publication Date
DD136781A1 true DD136781A1 (de) 1979-07-25

Family

ID=20701921

Family Applications (1)

Application Number Title Priority Date Filing Date
DD78204486A DD136781A1 (de) 1977-04-01 1978-03-30 Lichtaussendende halbleitereinrichtung

Country Status (9)

Country Link
US (1) US4153905A (de)
JP (1) JPS53144285A (de)
AT (1) AT358639B (de)
CH (1) CH628463A5 (de)
DD (1) DD136781A1 (de)
DE (1) DE2813918C2 (de)
FR (1) FR2386145A1 (de)
GB (1) GB1568351A (de)
SU (1) SU773795A1 (de)

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US4495514A (en) * 1981-03-02 1985-01-22 Eastman Kodak Company Transparent electrode light emitting diode and method of manufacture
DE3208638A1 (de) * 1982-03-10 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode aus siliziumkarbid
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
EP0444630B1 (de) * 1990-02-28 1997-05-21 Toyoda Gosei Co., Ltd. Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US6830992B1 (en) * 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
DE69229265T2 (de) * 1991-03-18 1999-09-23 Trustees Of Boston University, Boston Verfahren zur herstellung und dotierung hochisolierender dünner schichten aus monokristallinem galliumnitrid
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US6953703B2 (en) * 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
EP1313153A3 (de) * 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe
JP2803742B2 (ja) * 1993-04-28 1998-09-24 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子及びその電極形成方法
EP0622858B2 (de) * 1993-04-28 2004-09-29 Nichia Corporation Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US7682709B1 (en) * 1995-10-30 2010-03-23 North Carolina State University Germanium doped n-type aluminum nitride epitaxial layers
US6261931B1 (en) 1997-06-20 2001-07-17 The Regents Of The University Of California High quality, semi-insulating gallium nitride and method and system for forming same
DE69839300T2 (de) 1997-12-15 2009-04-16 Philips Lumileds Lighting Company, LLC, San Jose Licht-emittierende Vorrichtung
WO2000017941A1 (fr) * 1998-09-18 2000-03-30 Mitsubishi Cable Industries, Ltd. Photodetecteur a semi-conducteur
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
US6646292B2 (en) 1999-12-22 2003-11-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting device and method
US6946685B1 (en) 2000-08-31 2005-09-20 Lumileds Lighting U.S., Llc Light emitting semiconductor method and device
US6881983B2 (en) * 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
US6911079B2 (en) * 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors
US7002180B2 (en) * 2002-06-28 2006-02-21 Kopin Corporation Bonding pad for gallium nitride-based light-emitting device
US6734091B2 (en) 2002-06-28 2004-05-11 Kopin Corporation Electrode for p-type gallium nitride-based semiconductors
TW200400608A (en) 2002-06-17 2004-01-01 Kopin Corp Bonding pad for gallium nitride-based light-emitting device
US6955985B2 (en) 2002-06-28 2005-10-18 Kopin Corporation Domain epitaxy for thin film growth
US7122841B2 (en) 2003-06-04 2006-10-17 Kopin Corporation Bonding pad for gallium nitride-based light-emitting devices
US20050179042A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices
US20050179046A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation P-type electrodes in gallium nitride-based light-emitting devices
CA2592055A1 (en) * 2004-12-27 2006-07-06 Quantum Paper, Inc. Addressable and printable emissive display
TWI303115B (en) * 2006-04-13 2008-11-11 Epistar Corp Semiconductor light emitting device
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8456393B2 (en) 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US8889216B2 (en) * 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US8133768B2 (en) * 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US8314566B2 (en) 2011-02-22 2012-11-20 Quarkstar Llc Solid state lamp using light emitting strips
DE102014110054A1 (de) * 2014-07-17 2016-01-21 Osram Oled Gmbh Optoelektronische Baugruppe und Verfahren zum Herstellen einer optoelektronischen Baugruppe

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US3852796A (en) * 1972-06-08 1974-12-03 Ibm GaN SWITCHING AND MEMORY DEVICES AND METHODS THEREFOR
US3740622A (en) * 1972-07-10 1973-06-19 Rca Corp Electroluminescent semiconductor device for generating ultra violet radiation
FR2197237A1 (en) * 1972-08-22 1974-03-22 Radiotechnique Compelec Semiconductor with two layers of different compsns - formed by gradually changing compsn deposited from one to the other
US3783353A (en) * 1972-10-27 1974-01-01 Rca Corp Electroluminescent semiconductor device capable of emitting light of three different wavelengths
US3849707A (en) * 1973-03-07 1974-11-19 Ibm PLANAR GaN ELECTROLUMINESCENT DEVICE
US3819974A (en) * 1973-03-12 1974-06-25 D Stevenson Gallium nitride metal-semiconductor junction light emitting diode
US3865655A (en) * 1973-09-24 1975-02-11 Rca Corp Method for diffusing impurities into nitride semiconductor crystals
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
US3922703A (en) * 1974-04-03 1975-11-25 Rca Corp Electroluminescent semiconductor device
FR2361744A1 (fr) * 1976-08-10 1978-03-10 Ibm Procede pour l'obtention d'une conductivite de type p dans un materiau semi-conducteur auto-compense et dispositifs semi-conducteurs en resultant
US4095331A (en) * 1976-11-04 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of an epitaxial layer diode in aluminum nitride on sapphire

Also Published As

Publication number Publication date
FR2386145A1 (fr) 1978-10-27
AT358639B (de) 1980-09-25
US4153905A (en) 1979-05-08
DE2813918A1 (de) 1978-10-12
CH628463A5 (de) 1982-02-26
JPS5649469B2 (de) 1981-11-21
FR2386145B1 (de) 1983-01-21
GB1568351A (en) 1980-05-29
ATA224878A (de) 1980-02-15
SU773795A1 (ru) 1980-10-23
DE2813918C2 (de) 1984-04-05
JPS53144285A (en) 1978-12-15

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