SE396508B - Halvledarkrets innefattande tva felteffekttransistorer forbundna i ett differentialsteg och med skyddsdioder anordnade for att forhindra overspenningar mellan de bada transistorernas styrelektroder och mellan ... - Google Patents

Halvledarkrets innefattande tva felteffekttransistorer forbundna i ett differentialsteg och med skyddsdioder anordnade for att forhindra overspenningar mellan de bada transistorernas styrelektroder och mellan ...

Info

Publication number
SE396508B
SE396508B SE7500109A SE7500109A SE396508B SE 396508 B SE396508 B SE 396508B SE 7500109 A SE7500109 A SE 7500109A SE 7500109 A SE7500109 A SE 7500109A SE 396508 B SE396508 B SE 396508B
Authority
SE
Sweden
Prior art keywords
disconnected
semi
transistors
control electrodes
field power
Prior art date
Application number
SE7500109A
Other languages
English (en)
Swedish (sv)
Other versions
SE7500109L (cs
Inventor
Jr O H Schade
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7500109L publication Critical patent/SE7500109L/xx
Publication of SE396508B publication Critical patent/SE396508B/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
SE7500109A 1974-02-11 1975-01-07 Halvledarkrets innefattande tva felteffekttransistorer forbundna i ett differentialsteg och med skyddsdioder anordnade for att forhindra overspenningar mellan de bada transistorernas styrelektroder och mellan ... SE396508B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US441050A US3879640A (en) 1974-02-11 1974-02-11 Protective diode network for MOS devices

Publications (2)

Publication Number Publication Date
SE7500109L SE7500109L (cs) 1975-08-12
SE396508B true SE396508B (sv) 1977-09-19

Family

ID=23751301

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7500109A SE396508B (sv) 1974-02-11 1975-01-07 Halvledarkrets innefattande tva felteffekttransistorer forbundna i ett differentialsteg och med skyddsdioder anordnade for att forhindra overspenningar mellan de bada transistorernas styrelektroder och mellan ...

Country Status (11)

Country Link
US (1) US3879640A (cs)
JP (1) JPS5436032B2 (cs)
CA (1) CA1016613A (cs)
DE (1) DE2505573C3 (cs)
FR (1) FR2260888B1 (cs)
GB (1) GB1488177A (cs)
IN (1) IN142143B (cs)
IT (1) IT1028387B (cs)
MY (1) MY8000141A (cs)
NL (1) NL7501241A (cs)
SE (1) SE396508B (cs)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050031A (en) * 1976-03-01 1977-09-20 Signetics Corporation Circuit and structure having high input impedance and DC return
JPS6041463B2 (ja) * 1976-11-19 1985-09-17 株式会社日立製作所 ダイナミツク記憶装置
US4044313A (en) * 1976-12-01 1977-08-23 Rca Corporation Protective network for an insulated-gate field-effect (IGFET) differential amplifier
DE2751289A1 (de) * 1977-11-16 1979-05-17 Siemens Ag Mos-fet-differenzverstaerker
US4158178A (en) * 1978-05-15 1979-06-12 Rca Corporation Anti-latch circuit for amplifier stage including bipolar and field-effect transistors
US4206418A (en) * 1978-07-03 1980-06-03 Rca Corporation Circuit for limiting voltage differential in differential amplifiers
US4211941A (en) * 1978-08-03 1980-07-08 Rca Corporation Integrated circuitry including low-leakage capacitance
JPS5531354U (cs) * 1978-08-18 1980-02-29
US4532443A (en) * 1983-06-27 1985-07-30 Sundstrand Corporation Parallel MOSFET power switch circuit
US4864454A (en) * 1988-04-21 1989-09-05 Analog Devices, Incorporated Means for reducing damage to JFETs from electrostatic discharge events
US4922371A (en) * 1988-11-01 1990-05-01 Teledyne Semiconductor ESD protection circuit for MOS integrated circuits
FR2685817B1 (fr) * 1991-12-31 1994-03-11 Sgs Thomson Microelectronics Sa Protection generale d'un circuit integre contre les surcharges permanentes et decharges electrostatiques.
KR950006352B1 (ko) * 1992-12-31 1995-06-14 삼성전자주식회사 정류성 전송 게이트와 그 응용회로
JPH1174742A (ja) * 1997-08-27 1999-03-16 Denso Corp オペアンプ
US6400541B1 (en) * 1999-10-27 2002-06-04 Analog Devices, Inc. Circuit for protection of differential inputs against electrostatic discharge
US6507471B2 (en) * 2000-12-07 2003-01-14 Koninklijke Philips Electronics N.V. ESD protection devices
US6784729B1 (en) * 2002-08-14 2004-08-31 Advanced Micro Devices, Inc. Differential amplifier with input gate oxide breakdown avoidance
US7969697B2 (en) * 2008-04-22 2011-06-28 Exar Corporation Low-voltage CMOS space-efficient 15 KV ESD protection for common-mode high-voltage receivers
JP6065554B2 (ja) * 2012-12-03 2017-01-25 富士電機株式会社 比較器
JP7112233B2 (ja) * 2018-04-09 2022-08-03 株式会社豊田中央研究所 差動増幅回路
CN112825477A (zh) * 2019-11-20 2021-05-21 圣邦微电子（北京）股份有限公司 一种高压运算放大器及其输入级电路
CN116931631B (zh) * 2022-04-12 2025-09-09 圣邦微电子（北京）股份有限公司 一种无偏置电流的高压输入级电路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3434068A (en) * 1967-06-19 1969-03-18 Texas Instruments Inc Integrated circuit amplifier utilizing field-effect transistors having parallel reverse connected diodes as bias circuits therefor
JPS5122794B1 (cs) * 1970-06-24 1976-07-12
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action

Also Published As

Publication number Publication date
IT1028387B (it) 1979-01-30
IN142143B (cs) 1977-06-04
NL7501241A (nl) 1975-08-13
GB1488177A (en) 1977-10-05
MY8000141A (en) 1980-12-31
US3879640A (en) 1975-04-22
DE2505573A1 (de) 1975-08-14
JPS5436032B2 (cs) 1979-11-07
AU7758475A (en) 1976-07-29
DE2505573C3 (de) 1978-09-28
FR2260888A1 (cs) 1975-09-05
CA1016613A (en) 1977-08-30
JPS50115984A (cs) 1975-09-10
FR2260888B1 (cs) 1981-09-18
DE2505573B2 (de) 1978-01-19
SE7500109L (cs) 1975-08-12

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