SE168496C1 - Förfaringssätt för elektrolytisk etsning av en i huvudsak enkristallinisk halvledarkropp med p-n-övergång - Google Patents
Förfaringssätt för elektrolytisk etsning av en i huvudsak enkristallinisk halvledarkropp med p-n-övergångInfo
- Publication number
- SE168496C1 SE168496C1 SE457957A SE457957A SE168496C1 SE 168496 C1 SE168496 C1 SE 168496C1 SE 457957 A SE457957 A SE 457957A SE 457957 A SE457957 A SE 457957A SE 168496 C1 SE168496 C1 SE 168496C1
- Authority
- SE
- Sweden
- Prior art keywords
- junction
- semiconductor body
- crystalline semiconductor
- substantially single
- electrolytic etching
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H10P14/46—
-
- H10P14/47—
-
- H10P50/613—
-
- H10P95/00—
-
- H10W74/43—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Die Bonding (AREA)
- Ceramic Engineering (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES49100A DE1160547B (de) | 1956-06-16 | 1956-06-16 | Verfahren zum elektrolytischen AEtzen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen Halbleiterkoerper und einem an die Oberflaeche tretenden pn-UEbergang |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE168496C1 true SE168496C1 (sv) | 1959-09-01 |
Family
ID=7487131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE457957A SE168496C1 (sv) | 1956-06-16 | 1957-05-14 | Förfaringssätt för elektrolytisk etsning av en i huvudsak enkristallinisk halvledarkropp med p-n-övergång |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3010885A (enFirst) |
| AT (1) | AT199702B (enFirst) |
| CH (1) | CH374868A (enFirst) |
| DE (2) | DE1160547B (enFirst) |
| NL (2) | NL105600C (enFirst) |
| SE (1) | SE168496C1 (enFirst) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1105069B (de) * | 1959-04-25 | 1961-04-20 | Siemens Ag | AEtzverfahren eines pn-UEberganges bei der Herstellung einer Halbleiteranordnung |
| DE1120602B (de) * | 1959-08-03 | 1961-12-28 | Siemens Ag | Vorrichtung zur Durchfuehrung des anodischen Behandlungsverfahrens von Halbleiterkoerpern zur Herstellung einer elektrischen Halbleiteranordnung |
| DE1118363B (de) * | 1960-01-20 | 1961-11-30 | Siemens Ag | Vorrichtung zum AEtzen von pn-UEbergaengen an Halbleiteranordnungen |
| US3284333A (en) * | 1962-05-22 | 1966-11-08 | Ionics | Stable lead anodes |
| US3351825A (en) * | 1964-12-21 | 1967-11-07 | Solitron Devices | Semiconductor device having an anodized protective film thereon and method of manufacturing same |
| US3377258A (en) * | 1965-03-02 | 1968-04-09 | Westinghouse Electric Corp | Anodic oxidation |
| US3419480A (en) * | 1965-03-12 | 1968-12-31 | Westinghouse Electric Corp | Anodic oxidation |
| US3616380A (en) * | 1968-11-22 | 1971-10-26 | Bell Telephone Labor Inc | Barrier layer devices and methods for their manufacture |
| GB1556778A (en) * | 1977-03-11 | 1979-11-28 | Post Office | Preparation of semiconductor surfaces |
| JPS5462929A (en) * | 1977-10-28 | 1979-05-21 | Sumitomo Electric Ind Ltd | Surface treating method for aluminum and aluminum alloy |
| US4272351A (en) * | 1978-10-27 | 1981-06-09 | Sumitomo Electric Industries, Ltd. | Apparatus for electrolytic etching |
| US4891103A (en) * | 1988-08-23 | 1990-01-02 | Texas Instruments Incorporated | Anadization system with remote voltage sensing and active feedback control capabilities |
| DE59010140D1 (de) * | 1989-05-31 | 1996-03-28 | Siemens Ag | Verfahren zum grossflächigen elektrischen Kontaktieren eines Halbleiterkristallkörpers mit Hilfe von Elektrolyten |
| JP3376258B2 (ja) | 1996-11-28 | 2003-02-10 | キヤノン株式会社 | 陽極化成装置及びそれに関連する装置及び方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE753854C (de) * | 1938-10-08 | 1953-08-03 | Siemens & Halske A G | Verfahren zur gleichzeitigen elektrolytischen Aufrauhung und/oder Formierung mehrerer Elektroden nach dem Seriensystem |
| NL144803C (enFirst) * | 1948-02-26 | |||
| DE823763C (de) * | 1949-09-15 | 1951-12-06 | Siemens Ag | Verfahren zum elektrolytischen Polieren der Oberflaeche von Halbleiterkristallen |
| US2686279A (en) * | 1949-09-28 | 1954-08-10 | Rca Corp | Semiconductor device |
| DE905329C (de) * | 1950-05-24 | 1954-03-01 | Franz Klinke | Verfahren zur Herstellung von Aluminium-Offsetdruckplatten |
| US2656496A (en) * | 1951-07-31 | 1953-10-20 | Bell Telephone Labor Inc | Semiconductor translating device |
| DE823470C (de) * | 1950-09-12 | 1951-12-03 | Siemens Ag | Verfahren zum AEtzen eines Halbleiters |
| US2783197A (en) * | 1952-01-25 | 1957-02-26 | Gen Electric | Method of making broad area semiconductor devices |
| US2669692A (en) * | 1951-08-10 | 1954-02-16 | Bell Telephone Labor Inc | Method for determining electrical characteristics of semiconductive bodies |
| BE528756A (enFirst) * | 1953-05-11 | |||
| US2806189A (en) * | 1953-07-03 | 1957-09-10 | Sylvania Electric Prod | Alkaline titanate rectifiers |
| US2802159A (en) * | 1953-10-20 | 1957-08-06 | Hughes Aircraft Co | Junction-type semiconductor devices |
| US2885608A (en) * | 1954-12-03 | 1959-05-05 | Philco Corp | Semiconductive device and method of manufacture |
-
0
- NL NL216353D patent/NL216353A/xx unknown
- NL NL105600D patent/NL105600C/xx active
-
1956
- 1956-06-16 DE DES49100A patent/DE1160547B/de active Pending
- 1956-06-22 DE DES49165A patent/DE1221075B/de active Pending
-
1957
- 1957-03-26 AT AT199702D patent/AT199702B/de active
- 1957-05-14 SE SE457957A patent/SE168496C1/sv unknown
- 1957-06-11 US US665047A patent/US3010885A/en not_active Expired - Lifetime
- 1957-06-12 CH CH4719257A patent/CH374868A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL216353A (enFirst) | |
| DE1160547B (de) | 1964-01-02 |
| NL105600C (enFirst) | |
| AT199702B (de) | 1958-09-25 |
| US3010885A (en) | 1961-11-28 |
| DE1221075B (de) | 1966-07-14 |
| CH374868A (de) | 1964-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CH350371A (de) | Verfahren zur Herstellung von elektrischen Halbleitergeräten | |
| SE168496C1 (sv) | Förfaringssätt för elektrolytisk etsning av en i huvudsak enkristallinisk halvledarkropp med p-n-övergång | |
| CH367157A (de) | Verfahren zur Herstellung von Silizium hohen Reinheitsgrades | |
| CH347268A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
| CH365800A (de) | Verfahren zur grossflächigen Kontaktierung eines einkristallinen Siliziumkörpers | |
| CH357121A (de) | Verfahren zur Herstellung von Halbleiteranordnungen | |
| CH357470A (de) | Verfahren zur Herstellung von Halbleitervorrichtungen | |
| CH351031A (de) | Verfahren zur Herstellung von Halbleiter-Vorrichtungen | |
| CH350722A (de) | Verfahren zur Herstellung einer Halbleiter-Vorrichtung | |
| CH350723A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
| FR1173038A (fr) | Cellule de redresseur semi-conducteur | |
| CH351341A (de) | Verfahren zur Herstellung einer Halbleiter-Vorrichtung | |
| FR1174438A (fr) | Procédé de fabrication de corps semi-conducteurs | |
| FR1183091A (fr) | Procédé de mordançage | |
| CA530881A (en) | Method of making p-n junction devices | |
| CH352541A (fr) | Procédé de gravure électrolytique | |
| CH348208A (de) | Verfahren zur Herstellung von Halbleiteranordnungen | |
| CA547565A (en) | Method of making p-n junction semiconductor units | |
| FR1245573A (fr) | Fabrication de semi-conducteurs monocristallins | |
| FI33708A (fi) | Tystgående lås för dörrar eller liknande | |
| CA574892A (en) | Method of making p-n junction semiconductor unit | |
| FI28531A (fi) | Anordning för intagning av uteluft i en byggnad i samband med under fönster anbragt radiator | |
| FI33921A (fi) | Förfaringssätt för framställning av laktoner | |
| AU216879B2 (en) | Improvements in or relating to methods of forming a junction ina semiconductor | |
| AU211809B2 (en) | Fabrication of semiconductor devices |