SE168496C1 - Förfaringssätt för elektrolytisk etsning av en i huvudsak enkristallinisk halvledarkropp med p-n-övergång - Google Patents

Förfaringssätt för elektrolytisk etsning av en i huvudsak enkristallinisk halvledarkropp med p-n-övergång

Info

Publication number
SE168496C1
SE168496C1 SE457957A SE457957A SE168496C1 SE 168496 C1 SE168496 C1 SE 168496C1 SE 457957 A SE457957 A SE 457957A SE 457957 A SE457957 A SE 457957A SE 168496 C1 SE168496 C1 SE 168496C1
Authority
SE
Sweden
Prior art keywords
junction
semiconductor body
crystalline semiconductor
substantially single
electrolytic etching
Prior art date
Application number
SE457957A
Other languages
English (en)
Swedish (sv)
Inventor
Dr Phil Nat Norbert Dipl-Chem
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE168496C1 publication Critical patent/SE168496C1/sv

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/32Anodisation of semiconducting materials
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/12Etching of semiconducting materials
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/16Polishing
    • C25F3/30Polishing of semiconducting materials
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • H10P14/46
    • H10P14/47
    • H10P50/613
    • H10P95/00
    • H10W74/43

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Die Bonding (AREA)
  • Ceramic Engineering (AREA)
SE457957A 1956-06-16 1957-05-14 Förfaringssätt för elektrolytisk etsning av en i huvudsak enkristallinisk halvledarkropp med p-n-övergång SE168496C1 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES49100A DE1160547B (de) 1956-06-16 1956-06-16 Verfahren zum elektrolytischen AEtzen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen Halbleiterkoerper und einem an die Oberflaeche tretenden pn-UEbergang

Publications (1)

Publication Number Publication Date
SE168496C1 true SE168496C1 (sv) 1959-09-01

Family

ID=7487131

Family Applications (1)

Application Number Title Priority Date Filing Date
SE457957A SE168496C1 (sv) 1956-06-16 1957-05-14 Förfaringssätt för elektrolytisk etsning av en i huvudsak enkristallinisk halvledarkropp med p-n-övergång

Country Status (6)

Country Link
US (1) US3010885A (enFirst)
AT (1) AT199702B (enFirst)
CH (1) CH374868A (enFirst)
DE (2) DE1160547B (enFirst)
NL (2) NL105600C (enFirst)
SE (1) SE168496C1 (enFirst)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1105069B (de) * 1959-04-25 1961-04-20 Siemens Ag AEtzverfahren eines pn-UEberganges bei der Herstellung einer Halbleiteranordnung
DE1120602B (de) * 1959-08-03 1961-12-28 Siemens Ag Vorrichtung zur Durchfuehrung des anodischen Behandlungsverfahrens von Halbleiterkoerpern zur Herstellung einer elektrischen Halbleiteranordnung
DE1118363B (de) * 1960-01-20 1961-11-30 Siemens Ag Vorrichtung zum AEtzen von pn-UEbergaengen an Halbleiteranordnungen
US3284333A (en) * 1962-05-22 1966-11-08 Ionics Stable lead anodes
US3351825A (en) * 1964-12-21 1967-11-07 Solitron Devices Semiconductor device having an anodized protective film thereon and method of manufacturing same
US3377258A (en) * 1965-03-02 1968-04-09 Westinghouse Electric Corp Anodic oxidation
US3419480A (en) * 1965-03-12 1968-12-31 Westinghouse Electric Corp Anodic oxidation
US3616380A (en) * 1968-11-22 1971-10-26 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
GB1556778A (en) * 1977-03-11 1979-11-28 Post Office Preparation of semiconductor surfaces
JPS5462929A (en) * 1977-10-28 1979-05-21 Sumitomo Electric Ind Ltd Surface treating method for aluminum and aluminum alloy
US4272351A (en) * 1978-10-27 1981-06-09 Sumitomo Electric Industries, Ltd. Apparatus for electrolytic etching
US4891103A (en) * 1988-08-23 1990-01-02 Texas Instruments Incorporated Anadization system with remote voltage sensing and active feedback control capabilities
DE59010140D1 (de) * 1989-05-31 1996-03-28 Siemens Ag Verfahren zum grossflächigen elektrischen Kontaktieren eines Halbleiterkristallkörpers mit Hilfe von Elektrolyten
JP3376258B2 (ja) 1996-11-28 2003-02-10 キヤノン株式会社 陽極化成装置及びそれに関連する装置及び方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE753854C (de) * 1938-10-08 1953-08-03 Siemens & Halske A G Verfahren zur gleichzeitigen elektrolytischen Aufrauhung und/oder Formierung mehrerer Elektroden nach dem Seriensystem
NL144803C (enFirst) * 1948-02-26
DE823763C (de) * 1949-09-15 1951-12-06 Siemens Ag Verfahren zum elektrolytischen Polieren der Oberflaeche von Halbleiterkristallen
US2686279A (en) * 1949-09-28 1954-08-10 Rca Corp Semiconductor device
DE905329C (de) * 1950-05-24 1954-03-01 Franz Klinke Verfahren zur Herstellung von Aluminium-Offsetdruckplatten
US2656496A (en) * 1951-07-31 1953-10-20 Bell Telephone Labor Inc Semiconductor translating device
DE823470C (de) * 1950-09-12 1951-12-03 Siemens Ag Verfahren zum AEtzen eines Halbleiters
US2783197A (en) * 1952-01-25 1957-02-26 Gen Electric Method of making broad area semiconductor devices
US2669692A (en) * 1951-08-10 1954-02-16 Bell Telephone Labor Inc Method for determining electrical characteristics of semiconductive bodies
BE528756A (enFirst) * 1953-05-11
US2806189A (en) * 1953-07-03 1957-09-10 Sylvania Electric Prod Alkaline titanate rectifiers
US2802159A (en) * 1953-10-20 1957-08-06 Hughes Aircraft Co Junction-type semiconductor devices
US2885608A (en) * 1954-12-03 1959-05-05 Philco Corp Semiconductive device and method of manufacture

Also Published As

Publication number Publication date
NL216353A (enFirst)
DE1160547B (de) 1964-01-02
NL105600C (enFirst)
AT199702B (de) 1958-09-25
US3010885A (en) 1961-11-28
DE1221075B (de) 1966-07-14
CH374868A (de) 1964-01-31

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