CH367157A - Verfahren zur Herstellung von Silizium hohen Reinheitsgrades - Google Patents

Verfahren zur Herstellung von Silizium hohen Reinheitsgrades

Info

Publication number
CH367157A
CH367157A CH5004357A CH5004357A CH367157A CH 367157 A CH367157 A CH 367157A CH 5004357 A CH5004357 A CH 5004357A CH 5004357 A CH5004357 A CH 5004357A CH 367157 A CH367157 A CH 367157A
Authority
CH
Switzerland
Prior art keywords
purity
silicon
production
high degree
degree
Prior art date
Application number
CH5004357A
Other languages
English (en)
Inventor
Ede Dipl-Ing Pinter Janos
Bela Dipl Ing Sallay
Original Assignee
Egyesuelt Izzolampa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Egyesuelt Izzolampa filed Critical Egyesuelt Izzolampa
Publication of CH367157A publication Critical patent/CH367157A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/12—Salt solvents, e.g. flux growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH5004357A 1956-09-28 1957-09-02 Verfahren zur Herstellung von Silizium hohen Reinheitsgrades CH367157A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HUEE000425 1956-09-28

Publications (1)

Publication Number Publication Date
CH367157A true CH367157A (de) 1963-02-15

Family

ID=10995120

Family Applications (1)

Application Number Title Priority Date Filing Date
CH5004357A CH367157A (de) 1956-09-28 1957-09-02 Verfahren zur Herstellung von Silizium hohen Reinheitsgrades

Country Status (5)

Country Link
US (1) US2990372A (de)
CH (1) CH367157A (de)
DE (1) DE1154276B (de)
GB (1) GB874547A (de)
NL (2) NL109086C (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260209A (de) * 1960-01-22
US3394994A (en) * 1966-04-26 1968-07-30 Westinghouse Electric Corp Method of varying the thickness of dendrites by addition of an impurity which controls growith in the <111> direction
EP0002135B1 (de) * 1977-11-21 1982-11-03 Union Carbide Corporation Gereinigtes metallurgisches Silizium und Verfahren zu dessen Herstellung
US4193974A (en) * 1977-11-21 1980-03-18 Union Carbide Corporation Process for producing refined metallurgical silicon ribbon
US4193975A (en) * 1977-11-21 1980-03-18 Union Carbide Corporation Process for the production of improved refined metallurgical silicon
US4195067A (en) * 1977-11-21 1980-03-25 Union Carbide Corporation Process for the production of refined metallurgical silicon
US4270973A (en) * 1978-04-27 1981-06-02 Honeywell Inc. Growth of thallium-doped silicon from a tin-thallium solution
US4246249A (en) * 1979-05-24 1981-01-20 Aluminum Company Of America Silicon purification process
US4312848A (en) * 1979-05-24 1982-01-26 Aluminum Company Of America Boron removal in silicon purification
US4312847A (en) * 1979-05-24 1982-01-26 Aluminum Company Of America Silicon purification system
US4256717A (en) * 1979-05-24 1981-03-17 Aluminum Company Of America Silicon purification method
US4312846A (en) * 1979-05-24 1982-01-26 Aluminum Company Of America Method of silicon purification
DE2933164A1 (de) * 1979-08-16 1981-02-26 Consortium Elektrochem Ind Verfahren zum reinigen von rohsilicium
US4312849A (en) * 1980-09-09 1982-01-26 Aluminum Company Of America Phosphorous removal in silicon purification
US5314571A (en) * 1992-05-13 1994-05-24 Midwest Research Institute Crystallization from high temperature solutions of Si in copper
DE10358452B4 (de) * 2003-12-13 2005-09-15 Fiolitakis, Emmanuel, Dr. Verfahren zur Herstellung von hochreinem Silicium über die Calciumsilicid-Route
CA2648288A1 (en) * 2006-04-04 2007-10-11 6N Silicon Inc. Method for purifying silicon
CA2694806A1 (en) * 2007-07-23 2009-01-29 6N Silicon Inc. Use of acid washing to provide purified silicon crystals
US7959730B2 (en) 2007-10-03 2011-06-14 6N Silicon Inc. Method for processing silicon powder to obtain silicon crystals
US8501139B2 (en) * 2009-02-26 2013-08-06 Uri Cohen Floating Si and/or Ge foils
US8603242B2 (en) * 2009-02-26 2013-12-10 Uri Cohen Floating semiconductor foils
US8562932B2 (en) * 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
CN113508090B (zh) * 2019-03-27 2024-01-12 瓦克化学股份公司 生产工业硅的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR957542A (de) * 1941-04-04 1950-02-23
US2469418A (en) * 1946-06-19 1949-05-10 Tennessee Valley Authority Producing silicon
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon
US2885364A (en) * 1955-05-31 1959-05-05 Columbia Broadcasting Syst Inc Method of treating semiconducting materials for electrical devices
US2866701A (en) * 1956-05-10 1958-12-30 Vanadium Corp Of America Method of purifying silicon and ferrosilicon

Also Published As

Publication number Publication date
DE1154276B (de) 1963-09-12
GB874547A (en) 1961-08-10
US2990372A (en) 1961-06-27
NL109086C (de) 1900-01-01
NL219242A (de) 1900-01-01

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