NL109086C - - Google Patents

Info

Publication number
NL109086C
NL109086C NL109086DA NL109086C NL 109086 C NL109086 C NL 109086C NL 109086D A NL109086D A NL 109086DA NL 109086 C NL109086 C NL 109086C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of NL109086C publication Critical patent/NL109086C/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/12—Salt solvents, e.g. flux growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL109086D 1956-09-28 NL109086C (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HUEE000425 1956-09-28

Publications (1)

Publication Number Publication Date
NL109086C true NL109086C (xx) 1900-01-01

Family

ID=10995120

Family Applications (2)

Application Number Title Priority Date Filing Date
NL219242D NL219242A (xx) 1956-09-28
NL109086D NL109086C (xx) 1956-09-28

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL219242D NL219242A (xx) 1956-09-28

Country Status (5)

Country Link
US (1) US2990372A (xx)
CH (1) CH367157A (xx)
DE (1) DE1154276B (xx)
GB (1) GB874547A (xx)
NL (2) NL109086C (xx)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260209A (xx) * 1960-01-22
US3394994A (en) * 1966-04-26 1968-07-30 Westinghouse Electric Corp Method of varying the thickness of dendrites by addition of an impurity which controls growith in the <111> direction
EP0002135B1 (en) * 1977-11-21 1982-11-03 Union Carbide Corporation Improved refined metallurgical silicon and process for the production thereof
US4193974A (en) * 1977-11-21 1980-03-18 Union Carbide Corporation Process for producing refined metallurgical silicon ribbon
US4193975A (en) * 1977-11-21 1980-03-18 Union Carbide Corporation Process for the production of improved refined metallurgical silicon
US4195067A (en) * 1977-11-21 1980-03-25 Union Carbide Corporation Process for the production of refined metallurgical silicon
US4270973A (en) * 1978-04-27 1981-06-02 Honeywell Inc. Growth of thallium-doped silicon from a tin-thallium solution
US4246249A (en) * 1979-05-24 1981-01-20 Aluminum Company Of America Silicon purification process
US4312848A (en) * 1979-05-24 1982-01-26 Aluminum Company Of America Boron removal in silicon purification
US4312847A (en) * 1979-05-24 1982-01-26 Aluminum Company Of America Silicon purification system
US4256717A (en) * 1979-05-24 1981-03-17 Aluminum Company Of America Silicon purification method
US4312846A (en) * 1979-05-24 1982-01-26 Aluminum Company Of America Method of silicon purification
DE2933164A1 (de) * 1979-08-16 1981-02-26 Consortium Elektrochem Ind Verfahren zum reinigen von rohsilicium
US4312849A (en) * 1980-09-09 1982-01-26 Aluminum Company Of America Phosphorous removal in silicon purification
US5314571A (en) * 1992-05-13 1994-05-24 Midwest Research Institute Crystallization from high temperature solutions of Si in copper
DE10358452B4 (de) * 2003-12-13 2005-09-15 Fiolitakis, Emmanuel, Dr. Verfahren zur Herstellung von hochreinem Silicium über die Calciumsilicid-Route
CA2648288A1 (en) * 2006-04-04 2007-10-11 6N Silicon Inc. Method for purifying silicon
CA2694806A1 (en) * 2007-07-23 2009-01-29 6N Silicon Inc. Use of acid washing to provide purified silicon crystals
US7959730B2 (en) 2007-10-03 2011-06-14 6N Silicon Inc. Method for processing silicon powder to obtain silicon crystals
US8501139B2 (en) * 2009-02-26 2013-08-06 Uri Cohen Floating Si and/or Ge foils
US8603242B2 (en) * 2009-02-26 2013-12-10 Uri Cohen Floating semiconductor foils
US8562932B2 (en) * 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
CN113508090B (zh) * 2019-03-27 2024-01-12 瓦克化学股份公司 生产工业硅的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR957542A (xx) * 1941-04-04 1950-02-23
US2469418A (en) * 1946-06-19 1949-05-10 Tennessee Valley Authority Producing silicon
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon
US2885364A (en) * 1955-05-31 1959-05-05 Columbia Broadcasting Syst Inc Method of treating semiconducting materials for electrical devices
US2866701A (en) * 1956-05-10 1958-12-30 Vanadium Corp Of America Method of purifying silicon and ferrosilicon

Also Published As

Publication number Publication date
DE1154276B (de) 1963-09-12
GB874547A (en) 1961-08-10
US2990372A (en) 1961-06-27
CH367157A (de) 1963-02-15
NL219242A (xx) 1900-01-01

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