SE0004605D0 - Method of manufacturing dielectric ceramic composition for electronic devices - Google Patents

Method of manufacturing dielectric ceramic composition for electronic devices

Info

Publication number
SE0004605D0
SE0004605D0 SE0004605A SE0004605A SE0004605D0 SE 0004605 D0 SE0004605 D0 SE 0004605D0 SE 0004605 A SE0004605 A SE 0004605A SE 0004605 A SE0004605 A SE 0004605A SE 0004605 D0 SE0004605 D0 SE 0004605D0
Authority
SE
Sweden
Prior art keywords
composition
temperature
sintering
electronic devices
dielectric ceramic
Prior art date
Application number
SE0004605A
Other languages
English (en)
Inventor
Takeshi Shimada
Kazuhiro Nishikawa
Kazuya Toji
Original Assignee
Sumitomo Spec Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Spec Metals filed Critical Sumitomo Spec Metals
Publication of SE0004605D0 publication Critical patent/SE0004605D0/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
SE0004605A 1998-06-22 2000-12-13 Method of manufacturing dielectric ceramic composition for electronic devices SE0004605D0 (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19235798 1998-06-22
PCT/JP1999/003026 WO1999067186A1 (fr) 1998-06-22 1999-06-04 Procede de production d'une composition de porcelaine dielectrique pour dispositif electronique

Publications (1)

Publication Number Publication Date
SE0004605D0 true SE0004605D0 (sv) 2000-12-13

Family

ID=16289942

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0004605A SE0004605D0 (sv) 1998-06-22 2000-12-13 Method of manufacturing dielectric ceramic composition for electronic devices

Country Status (5)

Country Link
US (1) US6413896B1 (sv)
EP (1) EP1130002B1 (sv)
KR (1) KR100407456B1 (sv)
SE (1) SE0004605D0 (sv)
WO (1) WO1999067186A1 (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732361B2 (en) * 2005-08-11 2010-06-08 Hitachi Metals, Ltd. Dielectric porcelain composition for use in electronic devices
CN101439975B (zh) * 2008-12-22 2011-11-09 中国西电电气股份有限公司 一种电瓷烧成方法
US9923269B1 (en) 2015-06-30 2018-03-20 Rockwell Collins, Inc. Phase position verification system and method for an array antenna
US9673846B2 (en) 2014-06-06 2017-06-06 Rockwell Collins, Inc. Temperature compensation system and method for an array antenna system
US9653820B1 (en) * 2014-06-09 2017-05-16 Rockwell Collins, Inc. Active manifold system and method for an array antenna
CN109136491B (zh) * 2017-06-28 2020-07-28 宝山钢铁股份有限公司 一种含铌钢加热工艺动态控制方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4572594A (en) * 1984-02-08 1986-02-25 Schwartz C Bruce Arthroscopy support stand
JPS61191557A (ja) * 1985-02-19 1986-08-26 松下電器産業株式会社 誘電体共振器用磁器材料の製造方法
JPH0673246B2 (ja) * 1985-10-18 1994-09-14 住友金属鉱山株式会社 誘電体磁器
JP2622545B2 (ja) * 1987-05-22 1997-06-18 株式会社デンソー 誘電体共振器材料の製造方法
JP2663944B2 (ja) * 1987-05-26 1997-10-15 株式会社デンソー 誘電体共振器材料の製造方法
JPH0625024B2 (ja) * 1988-11-16 1994-04-06 住友金属鉱山株式会社 誘電体磁器の製造方法
JPH02285616A (ja) * 1989-04-26 1990-11-22 Sumitomo Special Metals Co Ltd 電子デバイス用誘電体磁器組成物
DE69738011D1 (de) * 1996-10-25 2007-09-27 Ngk Spark Plug Co Dielektrisches Material, Verfahren zu dessen Herstellung und dieses Material enthaltende dielektrische Resonatorvorrichtung
JP3843176B2 (ja) * 1997-12-25 2006-11-08 株式会社Ｎｅｏｍａｘ 電子デバイス用誘電体磁器組成物

Also Published As

Publication number Publication date
EP1130002B1 (en) 2005-11-16
WO1999067186A1 (fr) 1999-12-29
KR20010053049A (ko) 2001-06-25
EP1130002A1 (en) 2001-09-05
US6413896B1 (en) 2002-07-02
KR100407456B1 (ko) 2003-11-28
EP1130002A4 (en) 2004-04-28

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