SU1829320A1 - Способ получения стеклокристаллического сегнетоэлектрического материала - Google Patents

Способ получения стеклокристаллического сегнетоэлектрического материала

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Publication number
SU1829320A1
SU1829320A1 SU4652655/33A SU4652655A SU1829320A1 SU 1829320 A1 SU1829320 A1 SU 1829320A1 SU 4652655/33 A SU4652655/33 A SU 4652655/33A SU 4652655 A SU4652655 A SU 4652655A SU 1829320 A1 SU1829320 A1 SU 1829320A1
Authority
SU
USSR - Soviet Union
Prior art keywords
production
glass ceramic
ferroelectric material
ceramic ferroelectric
dielectric constant
Prior art date
Application number
SU4652655/33A
Other languages
English (en)
Inventor
М.А. Самохвалов
В.Р. Миненков
Б.Г. Шубин
Original Assignee
Томский государственный университет им.В.В.Куйбышева
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Томский государственный университет им.В.В.Куйбышева filed Critical Томский государственный университет им.В.В.Куйбышева
Priority to SU4652655/33A priority Critical patent/SU1829320A1/ru
Application granted granted Critical
Publication of SU1829320A1 publication Critical patent/SU1829320A1/ru

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  • Glass Compositions (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

Изобретение относится к производству стеклокристаллических материалов и может быть использовано при создании элементов мощных газовых лазеров, а также в качестве рабочего тела высоковольтных конденсаторов большой емкости. Для повышения диэлектрической проницаемости материала в способе получения стеклокристаллического сегнетоэлектрического материала, включающем расплавление на воздухе шихты, содержащей TiO, кристаллизацию и отжиг, шихта дополнительно содержит BaCOи Si при следующем соотношении компонентов, мас. % : TiO27,3 - 28,0; BaCO67,5 - 69,2 и Si 2,8 - 5,2. Величина диэлектрической проницаемости полученного материала составляет 450000 - 530000. 1 табл.
SU4652655/33A 1989-02-20 1989-02-20 Способ получения стеклокристаллического сегнетоэлектрического материала SU1829320A1 (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU4652655/33A SU1829320A1 (ru) 1989-02-20 1989-02-20 Способ получения стеклокристаллического сегнетоэлектрического материала

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU4652655/33A SU1829320A1 (ru) 1989-02-20 1989-02-20 Способ получения стеклокристаллического сегнетоэлектрического материала

Publications (1)

Publication Number Publication Date
SU1829320A1 true SU1829320A1 (ru) 1995-04-30

Family

ID=60541295

Family Applications (1)

Application Number Title Priority Date Filing Date
SU4652655/33A SU1829320A1 (ru) 1989-02-20 1989-02-20 Способ получения стеклокристаллического сегнетоэлектрического материала

Country Status (1)

Country Link
SU (1) SU1829320A1 (ru)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2786939C1 (ru) * 2022-10-20 2022-12-26 Акционерное общество "НПЦ СпецЭлектронСистемы" Сегнетоэлектрический материал

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2786939C1 (ru) * 2022-10-20 2022-12-26 Акционерное общество "НПЦ СпецЭлектронСистемы" Сегнетоэлектрический материал

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