JPS6489481A - Manufacture of superconducting thin-film - Google Patents
Manufacture of superconducting thin-filmInfo
- Publication number
- JPS6489481A JPS6489481A JP62244282A JP24428287A JPS6489481A JP S6489481 A JPS6489481 A JP S6489481A JP 62244282 A JP62244282 A JP 62244282A JP 24428287 A JP24428287 A JP 24428287A JP S6489481 A JPS6489481 A JP S6489481A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- layer
- film
- penetrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 8
- 229910052760 oxygen Inorganic materials 0.000 abstract 8
- 239000001301 oxygen Substances 0.000 abstract 8
- 238000000137 annealing Methods 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
PURPOSE:To stabilize characteristics by adjusting the amount of an oxygen content in a superconducting thin-film, and then by annealing it for a short period of time using a cover layer that oxygen cannot penetrate. CONSTITUTION:Superconducting materials, for example, Y, Ba, Cu, or O, that constitute Y1Ba2Cu3O7-delta (delta<0.5) are deposited on a substrate 11 such as Al2O3 single crystal (sapphire), MgO single crystal, and SrTiO3 single crystal so that the ratio of amounts of metal elements becomes the ratio in the above chemical equation. The substrate 11 with a substrate 12 is held at 200-800 deg.C in an atmosphere of oxygen. Oxygen supplied from the atmosphere is dissolved in the deposited layer 12, and the amount of oxygen is raised to the final required amount of oxygen in a superconducting thin-film. Then, the part that requires superconducting characteristics in this deposited layer 12 is covered with a layer that oxygen cannot penetrate. For a layer that oxygen cannot penetrate at an annealing temperature (about 900 deg.C), silicon nitride 13 is used. When the annealing time is short, SiO2, AlN, PSG, Pt, Au, Pd, Al, Si, etc., can be used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62244282A JPS6489481A (en) | 1987-09-30 | 1987-09-30 | Manufacture of superconducting thin-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62244282A JPS6489481A (en) | 1987-09-30 | 1987-09-30 | Manufacture of superconducting thin-film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6489481A true JPS6489481A (en) | 1989-04-03 |
Family
ID=17116424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62244282A Pending JPS6489481A (en) | 1987-09-30 | 1987-09-30 | Manufacture of superconducting thin-film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6489481A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100338250B1 (en) * | 1999-07-16 | 2002-05-27 | 이상영 | Method for improving the surface smoothness of YBa2Cu3O7-δhigh-temperature superconductor films grown on CeO2-buffered r-cut sapphire substrates |
-
1987
- 1987-09-30 JP JP62244282A patent/JPS6489481A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100338250B1 (en) * | 1999-07-16 | 2002-05-27 | 이상영 | Method for improving the surface smoothness of YBa2Cu3O7-δhigh-temperature superconductor films grown on CeO2-buffered r-cut sapphire substrates |
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