JPS57188822A - Vessel for baking - Google Patents
Vessel for bakingInfo
- Publication number
- JPS57188822A JPS57188822A JP56073721A JP7372181A JPS57188822A JP S57188822 A JPS57188822 A JP S57188822A JP 56073721 A JP56073721 A JP 56073721A JP 7372181 A JP7372181 A JP 7372181A JP S57188822 A JPS57188822 A JP S57188822A
- Authority
- JP
- Japan
- Prior art keywords
- vessel
- graphite
- film
- manufacture
- applied onto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 3
- 229910002804 graphite Inorganic materials 0.000 abstract 3
- 239000010439 graphite Substances 0.000 abstract 3
- 239000011347 resin Substances 0.000 abstract 3
- 229920005989 resin Polymers 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000007865 diluting Methods 0.000 abstract 1
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002966 varnish Substances 0.000 abstract 1
- 239000008096 xylene Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Furnace Charging Or Discharging (AREA)
Abstract
PURPOSE:To manufacture the vessel for sintering a compound semiconductor thin-film applied onto a substrate by using graphite. CONSTITUTION:The vessel consists of a shallow box-shaped vessel 1 and a cover 2 loosely fitted to the vessel 1, and a small hole 3 is formed to the cover as necessary. The silicon resin carbide thin-film 4 is shaped to the necessary section of the surface of the vessel in order to prevent the pollution of a semiconductor sintered film due to the falling off of the impalpable powder of graphite and improve the durability of the vessel for baking. According to this manufacture, the graphite block of 15% porosity and 1,200ppm ash content is formed in shape, external form size thereof is 360X360X45mm. and which is shown in the figure, through machining, and a material obtained by diluting silicon resin varnish by xylene and bringing a resin section to 5% is applied onto the surface. The block is heated for one hr. at 120 deg.C and for two hr. at 250 deg.C, slowly temperature- raised in nitrogen gas, kept for two hr. at 1,100 deg.C and cooled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56073721A JPS57188822A (en) | 1981-05-15 | 1981-05-15 | Vessel for baking |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56073721A JPS57188822A (en) | 1981-05-15 | 1981-05-15 | Vessel for baking |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57188822A true JPS57188822A (en) | 1982-11-19 |
| JPH0117074B2 JPH0117074B2 (en) | 1989-03-28 |
Family
ID=13526365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56073721A Granted JPS57188822A (en) | 1981-05-15 | 1981-05-15 | Vessel for baking |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57188822A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57200027U (en) * | 1981-06-15 | 1982-12-20 | ||
| JPH05187029A (en) * | 1992-01-10 | 1993-07-27 | Kensetsusho Hokurikuchihou Kensetsukyoku | Execution method of retaining wall |
-
1981
- 1981-05-15 JP JP56073721A patent/JPS57188822A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57200027U (en) * | 1981-06-15 | 1982-12-20 | ||
| JPH0228395Y2 (en) * | 1981-06-15 | 1990-07-30 | ||
| JPH05187029A (en) * | 1992-01-10 | 1993-07-27 | Kensetsusho Hokurikuchihou Kensetsukyoku | Execution method of retaining wall |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0117074B2 (en) | 1989-03-28 |
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