RU2615071C1 - Bipolar-field multidifferential operational amplifier - Google Patents

Abstract

FIELD: electricity.

SUBSTANCE: proposed bipolar-field multidifferential operational amplifier, which comprises a first (1) input bipolar transistor, the first (2) input device, the first (3) input FET with controlling p-n junction, the second (4) input device, the second ( 5) input bipolar transistor, and the third (6) input device, the second (7) input FET with controlling p-n junction, a fourth (8) input device, a current mirror (9), the first (10) power supply bus buffer amplifier (11), second (12) power supply bus, the first (13) and second (14) additional resistors, the first (15) and second (16) and third (17) additional bipolar transistors, the first (18) third current stabilizing two-pole, fourth (19), fifth (20) and sixth (21) additional bipolar transistors, the second (22) additional current stabilizing two-pole.

EFFECT: increase in voltage gain open multidifferential operational amplifier while maintaining the high stability of the zero level.

2 cl, 9 dwg

Description

The invention relates to the field of electronics and can be used as a precision device for amplifying broadband signals.

In modern microelectronics, the so-called multidifferential operational amplifiers (MOUs) are used, which have (in comparison with classical op amps) a number of indisputable advantages in connection schemes and their parameters [1-17]. Today, MOUs are implemented on bipolar [1, 2] and field-effect transistors [3-12], as well as in the form of hybrid circuitry solutions containing bipolar and field-effect transistors with a pn junction control [13-16]. The last subclass of MOU, when implemented on the basis of the technology of OJSC Integral (Minsk) [17], is characterized by high radiation resistance and, in this regard, refers to a rather promising elemental base.

However, to obtain increased voltage gains in such MOCs with restrictions on the number of main stages (no more than two), a special circuitry is necessary that takes into account the limitations of bipolar field technology [17], which provides radiation resistance of microelectronic products to 1 Mrad and withstands neutron flux up to 10 ¹³ n./cm ² .

The closest prototype of the claimed device is MOU according to patent RU 2523124, FIG. 3. It contains (Fig. 1) the first 1 input bipolar transistor, the base of which is connected to the first 2 input of the device, the emitter of the first 1 input bipolar transistor is connected to the source of the first 3 input field-effect transistor with a pn junction, the gate of which is connected to the second 4 by the input of the device, the second 5 input bipolar transistor, the base of which is connected to the third 6 input of the device, the emitter of the second 5 input bipolar transistor is connected to the source of the second 7 input field-effect transistor with a pn junction, the gate to otorogo connected to the fourth 8 input of the device, a current mirror 9, consistent with the first 10 bus power source, the output of which is connected to the input of the buffer amplifier 11, the second 12 bus power source.

A significant drawback of the well-known MOU is that due to the use of input field effect transistors, which are characterized by low slope, it does not provide high values of the voltage gain. Thus, the MOU prototype with two-stage architecture has limited areas of use.

The main objective of the invention is to increase the voltage gain of the open MOA while maintaining high stability of the zero level (low bias voltages of zero).

The problem is achieved in that in the bipolar-field multidifferential operational amplifier of FIG. 1, containing the first 1 input bipolar transistor, the base of which is connected to the first 2 input of the device, the emitter of the first 1 input bipolar transistor is connected to the source of the first 3 input field-effect transistor with a pn junction, the gate of which is connected to the second 4 input of the device, the second 5 an input bipolar transistor, the base of which is connected to the third 6 input of the device, the emitter of the second 5 input bipolar transistor is connected to the source of the second 7 input field-effect transistor with a pn junction, the gate of which connected to the fourth 8 input of the device, a current mirror 9, coordinated with the first 10 bus of the power source, the output of which is connected to the input of the buffer amplifier 11, the second 12 bus of the power source, new elements and communications are provided - the emitter of the first 1 input bipolar transistor is connected to the source of the first 3 input field-effect transistor with a control pn junction through the first 13 additional resistor, the emitter of the second 5 input bipolar transistor is connected to the source of the second 7 input field-effect transistor with a control pn by passing through the second 14 additional resistor, the collectors of the first 1 and second 5 input bipolar transistors are connected to the first 10 bus of the power supply, the drain of the first 3 input field-effect transistor with a pn junction is connected to the combined bases of the first 15, second 16 and third 17 additional bipolar transistors, the emitters of which are connected to the second 12 bus of the power source, and between the drain of the first 3 input field-effect transistor with a pn junction and the second 12 bus of the power source, the first 18 additional an effective current-stabilizing two-terminal device, the drain of the second 7 input field-effect transistor with a pn junction is connected to the combined bases of the fourth 19, fifth 20 and sixth 21 additional bipolar transistors, the emitters of which are connected to the second 12 bus of the power supply, and between the drain of the second 7 input field-effect transistor with a pn junction control and a second 12 power supply bus, a second 22 additional current-stabilizing bipolar is included, collectors of the second 16 and fifth 20 additional bipolar transistors the ditch is connected to the source of the first 3 input field-effect transistor with the control pn junction, the collectors of the third 17th and sixth 21 additional bipolar transistors are connected to the source of the second 7 input field-effect transistor with the control pn junction, the collector of the first 15 additional bipolar transistor is connected to the current input mirrors 9, and the collector of the fourth 19 additional bipolar transistor is connected to the output of the current mirror 9.

In the drawing of FIG. 1 shows a diagram of the MOA prototype, and in the drawing of FIG. 2 is a diagram of the inventive device in accordance with paragraph 1 of the claims.

In the drawing of FIG. 3 shows a diagram of the inventive device in accordance with paragraph 2 of the claims.

In the drawing of FIG. 4 is a diagram of the inventive device of FIG. 2 in the environment PSpice on radiation-dependent models of integrated transistors ABMK_1_4 NPO Integral (Minsk).

In the drawing of FIG. 5 shows the amplitude-frequency characteristics of the voltage gain of the operational amplifier of FIG. 4 without negative feedback (upper graph) and with negative feedback (lower graph).

In the drawing of FIG. 6 shows the dependence of the systematic component of the zero bias voltage of the circuit of FIG. 4 when exposed to temperature and neutron flux.

In the drawing of FIG. 7 is a diagram of the inventive device of FIG. 3 in the environment PSpice on radiation-dependent models of integrated transistors ABMK_1_4 NPO Integral (Minsk) for the case of its non-inverting inclusion in the circuit with 100% negative feedback, which is introduced to the base of transistor Q2. Moreover, to reduce the output resistance, a buffer amplifier is provided in the circuit (Gain = 1). The circuit also uses a traditional frequency response correction circuit (capacitor C1).

In the drawing of FIG. 8 shows the amplitude-frequency characteristics of the operational amplifier of FIG. 7 without negative feedback and with negative feedback (OOS).

In the drawing of FIG. 9 shows the dependence of the systematic component of the zero bias voltage of the circuit of FIG. 7 when exposed to temperature and neutron flux in the absence of a dispersion of element parameters, as well as ideal current mirror 9 and buffer amplifier 11.

The bipolar field multidifferential operational amplifier of FIG. 2 contains the first 1 input bipolar transistor, the base of which is connected to the first 2 input of the device, the emitter of the first 1 input bipolar transistor is connected to the source of the first 3 input field-effect transistor with a pn junction, the gate of which is connected to the second 4 input of the device, the second 5 input a bipolar transistor, the base of which is connected to the third 6 input of the device, the emitter of the second 5 input bipolar transistor is connected to the source of the second 7 input field-effect transistor with a pn junction, the gate of which one with a fourth input device 8, a current mirror 9, consistent with the first power supply bus 10, whose output is connected to the input of the buffer amplifier 11, a second 12 power source bus. In this case, the emitter of the first 1 input bipolar transistor is connected to the source of the first 3 input field-effect transistor with a control pn junction through the first 13 additional resistor, the emitter of the second 5 input bipolar transistor is connected to the source of the second 7 input field-effect transistor with a control pn junction through the second 14 additional resistor, the collectors of the first 1 and second 5 input bipolar transistors are connected to the first 10 bus of the power source, the drain of the first 3 input field-effect transistor with a control pn junction It is connected with the bases of the first 15, second 16 and third 17 additional bipolar transistors, the emitters of which are connected to the second 12 bus of the power supply, and between the drain of the first 3 input field-effect transistor with a pn junction and the second 12 bus of the power supply, the first 18 additional current-stabilizing bipolar, the drain of the second 7 input field-effect transistor with a pn junction is connected to the combined bases of the fourth 19, fifth 20 and sixth 21 additional bipolar transistors, emitters which are connected to the second 12 bus of the power supply, and between the drain of the second 7 input field-effect transistor with a pn junction and the second 12 bus of the power supply, a second 22 additional current-stabilizing two-terminal device is connected, the collectors of the second 16 and fifth 20 additional bipolar transistors are connected to the source of the first 3 of the input field-effect transistor with a pn junction, the collectors of the third 17th and sixth 21 additional bipolar transistors are connected to the source of the second 7 input field-effect transistor with ravlyaetsya p-n junction, the collector of the first bipolar transistor 15 further coupled to the input of current mirror 9, and the collector of the fourth bipolar transistor 19 further coupled to the output of current mirror 9.

In order to reduce the influence of the Airlie voltage of the first 15 and fourth 19 additional bipolar transistors on the zero bias voltage Ucm MOA in the circuit of FIG. 2, a bias circuit of the static level 23 is introduced, made, for example, on the basis of a zener diode, resistors, or any voltage reference sources.

In the drawing of FIG. 3, in accordance with paragraph 2 of the claims, the drain of the first 3 input field-effect transistor with a pn junction is connected to the combined bases of the first 15, second 16 and third 17 additional bipolar transistors through the emitter-base junction of the first 23 auxiliary transistor, the collector of which connected to the first 10 bus of the power source, and the emitter is connected to the second 12 bus of the power source through the first 24 auxiliary resistor, the drain of the second 7 input field-effect transistor with a pn junction is connected to the bases of the fourth 19, fifth 20 and sixth 21 additional bipolar transistors through the emitter-base junction of the second 25 auxiliary transistor, the collector of which is connected to the first 10 bus of the power source, and the emitter is connected to the second 12 bus of the power source through the second 26 auxiliary resistor. In addition, in the diagram of FIG. 3, a conventional correction circuit for the amplitude-frequency characteristic 27 in the form of a correction capacitor Ck is provided.

Consider the operation of the MOA of FIG. 2 in static mode for the case when all the inputs of the MOA are connected to a common bus. In this inclusion of MOU, the emitter currents of the first 1 and second 5 input bipolar transistors depend on the resistances of the first 13 and second 14 additional resistors, are determined by the geometry of the first 3 and second 7 input field-effect transistors, and depend on the magnitude of their source current I _si = I ₀ . For the input circuit of the MOU, we can write the following Kirchhoff equation:

where U _{eb. 1} ≈0.7V - static voltage emitter-base of transistor 1;

- заданный уровень статического тока коллектора первого 15 и четвертого 19 дополнительных биполярных транзисторов;

- a given level of static collector current of the first 15 and fourth 19 additional bipolar transistors;

I ₀ - current of the first 18 and second 22 additional current-stabilizing two-terminal networks;

- напряжение затвор-исток первого 3 полевого транзистора с управляющим р-n переходом при токе стока, равном I_сз=I₀.

- gate-source voltage of the first 3 field-effect transistor with a control pn junction at a drain current equal to I _sz = I ₀ .

In equation (1), the known values are U _eb. 1 _≈0.7 V, as well as the voltage U _zi.3 for a given current I ₀ , which is determined by the gate-voltage characteristic of the first 3 (second 7) input field-effect transistor with a control p- n transition.

первого 15 и четвертого 19 дополнительных биполярных транзисторов, из уравнения (1) можно найти необходимую величину сопротивлений первого 13 (второго 14) дополнительного резистора, при котором в схеме МОУ фиг. 2 устанавливается необходимый статический режим.Thus, setting the static current

of the first 15 and fourth 19 additional bipolar transistors, from equation (1) you can find the required resistance values of the first 13 (second 14) additional resistor, in which in the MOU circuit of FIG. 2 sets the necessary static mode.

For the differential input signal of the MOA, the alternating components of the collector currents of the third 17 and fifth 20 additional bipolar transistors compensate each other in the source circuit of the first 3 input field-effect transistor with a pn junction and do not affect the operation of the circuit. Therefore, the overall gain of the MOA of FIG. 2, for example, for input 4, is determined by the product

where K _y1 is the transmission coefficient of the voltage u _I from the input 2 of the MOA to the drain circuit of the first 3 field-effect transistor with a pn junction;

K _y2 is the transmission coefficient of voltage from the base of the first 15 additional bipolar transistor to the input of the buffer amplifier 11;

K _y11 ≈1 is the voltage transfer coefficient of the buffer amplifier 11.

Wherein

where R _eq.sz - equivalent resistance in the drain circuit of the first 3 input field-effect transistor with a control pn junction;

S _DC - the steepness of the conversion of voltage at input 2 to the increment of the drain current of the first 3 input field-effect transistor with a control pn junction.

For K _y2, one can find

where r _e = r _e15 = r _e19 is the differential resistance of the emitter junctions of the first 15 and fourth 19 additional bipolar transistors;

R _{equiv. 11} is the equivalent resistance in the input circuit of the buffer amplifier 11;

ϕ _t = 26 mV - temperature potential;

- статически ток коллектора первого 15 и четвертого 19 дополнительных биполярных транзисторов.

- statically collector current of the first 15 and fourth 19 additional bipolar transistors.

Equivalent resistance R _eq.sz is determined by the equation:

where y _oy.3 - the output conductivity of the first 3 field-effect transistor with a control pn junction along the drain circuit;

y _{input 15} , y _{input 16} , y input ₁₇ - input conductivity along the base circuit of the first 15, second 16 and third 17 additional bipolar transistors;

y ₁₈ is the output conductivity of the first 18 additional current-stabilizing bipolar.

It can be approximately assumed that

where β = β ₁₅ ≈β ₁₆ ≈β ₁₇ is the current gain of the base of transistors 15, 16, 17;

ϕ _t = 26 mV - temperature potential;

- статический ток эмиттера транзисторов 15, 16, 17, 19, 20, 21.

- static current of the emitter of transistors 15, 16, 17, 19, 20, 21.

Thus, the overall gain of the MOA

An analysis of the above equations shows that in the claimed MOU of FIG. 2, the voltage gain reaches 60-80 dB. In the circuit of FIG. 3, corresponding to paragraph 2 of the claims, this parameter Ky assumes a value of the order of 100 dB, which is sufficient for its many applications. These findings are confirmed by the results of computer simulation of FIG. 5 and FIG. 8.

Thus, the proposed MOC with a two-stage architecture has a fairly high voltage gain (Fig. 8) - about 100 dB and a zero bias voltage (U _cm ) close to zero (Fig. 9) (in the absence of a dispersion of the parameters of the elements and ideal current mirror 9 and buffer amplifier 11).

The above calculation of parameters and computer simulation allow us to conclude that the proposed device has significant advantages in comparison with the known gain in open switching and can be widely used in precision systems for converting radio signals.

Information sources

1. Patent WO 03/04328, FIG. 6.

2. Patent application US 2008/0186091, FIG. four.

3. US Pat. No. 6,496,576; FIG. 2

4. Patent US 7205799, FIG. 4, FIG. 5.

5. A.c. USSR 537435, Fig. 1.

6. US Pat. No. 6,388,519, FIG. 36.

7. Patent application US 2003/0006841, FIG. one.

8. Patent application US 2013/0099782, FIG. 2.

9. Patent US 6,255,807; FIG. 5.

10. US Pat. No. 6,400,225, FIG. 3.

11. Patent application US 2003/0132803, FIG. 7.

12. US patent 6977526, FIG. one.

13. Patent RU 2517699, Fig.3.

14. The main connection circuits of the radiation-hardened differential difference amplifier based on the bipolar and field effect technological process / N.N. Prokopenko, O.V. Dvomikov, N.V. Butyrlagin, A.V. Bugakova // 2014 12th International conference on actual problems of electronic instrument engineering (APEIE - 2014) proceedings in 7 Volumes; Novosibirsk, October 2-4, 2014. - Novosibirsk State Technical University. - Vol. 1. - P. 29-34 DOI: 10.1109 / APEIE.2014.7040870 (Fig. 2).

15. Krutchinsky, S.G. Input stages of differential and multidifferential operational amplifiers with high common-mode voltage attenuation [Text] / S.G. Krutchinsky, A.E. Titov, M.S. Tsybin // Problems of developing promising micro- and nanoelectronic systems: Proceedings. - M .: IPPM RAS, 2010 .-- S. 537-542. - ISSN 2078-7707.

16. Prokopenko NN, Differential and multidifferential amplifiers in the elemental basis of the radiation-resistant process ABMK_1.5 [Text] / Prokopenko NN, Serebryakov AI, Butyrlagin NV // News of SFU. Technical science. Thematic issue “Management Problems in Fuel and Energy Complexes and Energy-Saving Technologies”. 2014. - No. 5 (154). - S. 58-66.

17. The element base of radiation-resistant information-measuring systems: monograph / N.N. Prokopenko, O.V. Dvornikov, S.G. Krutchinsky; under the general. ed. Doctor of Technical Sciences prof. N.N. Prokopenko; FSBEI HPE “South-Ros. state un-t economics and service. " - Mines: FSBEI HPE "URGUES", 2011. - 208 p.

18. The main properties, parameters and basic schemes for switching on multi-differential operational amplifiers with a high-impedance node / N.N. Prokopenko, O.V. Dvornikov, P.S. Budyakov // Electronic Engineering. Series 2. Semiconductor devices. Issue 2 (233), Moscow, Pulsar OJSC, 2014, pp. 53-64.

Claims (2)

1. A bipolar-field multidifferential operational amplifier containing the first (1) input bipolar transistor, the base of which is connected to the first (2) input of the device, the emitter of the first (1) input bipolar transistor is connected to the source of the first (3) input field-effect transistor with a control p -n junction, the gate of which is connected to the second (4) input of the device, the second (5) input bipolar transistor, the base of which is connected to the third (6) input of the device, the emitter of the second (5) input bipolar transistor is connected to the source of the second (7) an input field-effect transistor with a pn junction, the gate of which is connected to the fourth (8) input of the device, a current mirror (9), matched with the first (10) bus of the power source, the output of which is connected to the input of the buffer amplifier (11) , a second (12) power supply bus, characterized in that the emitter of the first (1) input bipolar transistor is connected to the source of the first (3) input field-effect transistor with a pn junction through the first (13) additional resistor, the emitter of the second (5) input bipolar transistor connected with the source of the second (7) input field-effect transistor with a pn junction through the second (14) additional resistor, the collectors of the first (1) and second (5) input bipolar transistors are connected to the first (10) bus of the power source, the drain of the first (3 ) the input field-effect transistor with a pn junction is connected to the combined bases of the first (15), second (16) and third (17) additional bipolar transistors, the emitters of which are connected to the second (12) bus of the power source, and between the drain of the first (3 ) input field effect transistor with control The first (18) additional current-stabilizing two-terminal device is connected by the transferring pn junction and the second (12) bus of the power supply, the drain of the second (7) input field-effect transistor with the pn junction control is connected to the combined bases of the fourth (19), fifth (20) and the sixth (21) additional bipolar transistors, the emitters of which are connected to the second (12) power supply bus, and between the drain of the second (7) input field-effect transistor with a pn junction and the second (12) power supply bus, a second (22) additional tocostabil isolating bipolar, collectors of the second (16) and fifth (20) additional bipolar transistors are connected to the source of the first (3) input field-effect transistor with a pn junction, collectors of the third (17) and sixth (21) additional bipolar transistors are connected to the source of the second (7) an input field-effect transistor with a pn junction control, the collector of the first (15) additional bipolar transistor is connected to the input of the current mirror (9), and the collector of the fourth (19) additional bipolar transistor is connected to the output ovogo mirror (9). 2. The bipolar field multidifferential operational amplifier according to claim 1, characterized in that the drain of the first (3) input field-effect transistor with a pn junction is connected to the combined bases of the first (15), second (16) and third (17) additional bipolar transistors through the emitter-base junction of the first (23) auxiliary transistor, the collector of which is connected to the first (10) bus of the power source, and the emitter is connected to the second (12) bus of the power supply through the first (24) auxiliary resistor, the drain of the second (7) input floor transistor with a pn junction is connected to the combined bases of the fourth (19), fifth (20) and sixth (21) additional bipolar transistors through the emitter-base junction of the second (25) auxiliary transistor, the collector of which is connected to the first (10) bus power supply, and the emitter is connected to the second (12) bus of the power supply through the second (26) auxiliary resistor.

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