RU2401245C2 - Способ изготовления микромеханических устройств, содержащих газопоглотительный материал, и изготовленные этим способом устройства - Google Patents
Способ изготовления микромеханических устройств, содержащих газопоглотительный материал, и изготовленные этим способом устройства Download PDFInfo
- Publication number
- RU2401245C2 RU2401245C2 RU2008127306/28A RU2008127306A RU2401245C2 RU 2401245 C2 RU2401245 C2 RU 2401245C2 RU 2008127306/28 A RU2008127306/28 A RU 2008127306/28A RU 2008127306 A RU2008127306 A RU 2008127306A RU 2401245 C2 RU2401245 C2 RU 2401245C2
- Authority
- RU
- Russia
- Prior art keywords
- substrate
- silicon
- intermediate layer
- getter material
- parts
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000002250 absorbent Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 27
- 230000008021 deposition Effects 0.000 claims description 23
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000011282 treatment Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- -1 nitrogen ions Chemical class 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 238000002513 implantation Methods 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 description 46
- 239000007789 gas Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000006023 eutectic alloy Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Glass Compositions (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT002343A ITMI20052343A1 (it) | 2005-12-06 | 2005-12-06 | Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti |
| ITMI2005A002343 | 2005-12-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2008127306A RU2008127306A (ru) | 2010-01-20 |
| RU2401245C2 true RU2401245C2 (ru) | 2010-10-10 |
Family
ID=37951839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2008127306/28A RU2401245C2 (ru) | 2005-12-06 | 2006-11-28 | Способ изготовления микромеханических устройств, содержащих газопоглотительный материал, и изготовленные этим способом устройства |
Country Status (17)
| Country | Link |
|---|---|
| US (1) | US7833880B2 (enExample) |
| EP (1) | EP1957395B1 (enExample) |
| JP (1) | JP5015947B2 (enExample) |
| KR (1) | KR101364623B1 (enExample) |
| CN (1) | CN101291873B (enExample) |
| AT (1) | ATE480495T1 (enExample) |
| AU (1) | AU2006322862C1 (enExample) |
| CA (1) | CA2623020C (enExample) |
| DE (1) | DE602006016850D1 (enExample) |
| DK (1) | DK1957395T3 (enExample) |
| ES (1) | ES2348613T3 (enExample) |
| IL (1) | IL191756A (enExample) |
| IT (1) | ITMI20052343A1 (enExample) |
| NO (1) | NO20081994L (enExample) |
| RU (1) | RU2401245C2 (enExample) |
| TW (1) | TWI325409B (enExample) |
| WO (1) | WO2007066370A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2474912C1 (ru) * | 2011-08-23 | 2013-02-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" (МИЭТ) | Способ получения газопоглощающей структуры |
| RU2522362C1 (ru) * | 2012-12-29 | 2014-07-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана (МГТУ им. Н.Э. Баумана) | Микроэлектромеханический взрыватель изохорический |
| RU2522323C1 (ru) * | 2012-12-29 | 2014-07-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) | Микроэлектромеханический взрыватель |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2922202B1 (fr) * | 2007-10-15 | 2009-11-20 | Commissariat Energie Atomique | Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication. |
| EP2484629B1 (fr) * | 2011-02-03 | 2013-06-26 | Nivarox-FAR S.A. | Pièce de micromécanique complexe ajourée |
| US9966319B1 (en) | 2011-10-27 | 2018-05-08 | Global Circuit Innovations Incorporated | Environmental hardening integrated circuit method and apparatus |
| US9870968B2 (en) | 2011-10-27 | 2018-01-16 | Global Circuit Innovations Incorporated | Repackaged integrated circuit and assembly method |
| US9935028B2 (en) | 2013-03-05 | 2018-04-03 | Global Circuit Innovations Incorporated | Method and apparatus for printing integrated circuit bond connections |
| RU2523718C2 (ru) * | 2012-11-20 | 2014-07-20 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" (МИЭТ) | Нанокомпозитная газопоглощающая структура и способ ее получения |
| US10160638B2 (en) | 2013-01-04 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for a semiconductor structure |
| US8847373B1 (en) * | 2013-05-07 | 2014-09-30 | Innovative Micro Technology | Exothermic activation for high vacuum packaging |
| DE102015224499A1 (de) * | 2015-12-08 | 2017-06-08 | Robert Bosch Gmbh | Spannungsreduzierung beim Laserwiederverschluss durch Temperaturerhöhung |
| DE102015226772A1 (de) * | 2015-12-29 | 2017-06-29 | Robert Bosch Gmbh | Gettervorrichtung für ein mikromechanisches Bauelement |
| JP6932491B2 (ja) * | 2016-10-31 | 2021-09-08 | 株式会社豊田中央研究所 | Ｍｅｍｓ装置を製造する方法 |
| CN106517082B (zh) * | 2016-11-14 | 2017-11-03 | 北方电子研究院安徽有限公司 | 一种mems吸气剂图形化制备方法 |
| CN109879240B (zh) * | 2017-12-06 | 2021-11-09 | 有研工程技术研究院有限公司 | 一种厚膜吸气材料的制备方法 |
| FR3083537B1 (fr) * | 2018-07-06 | 2021-07-30 | Ulis | Boitier hermetique comportant un getter, composant integrant un tel boitier hermetique et procede de fabrication associe |
| US11508680B2 (en) | 2020-11-13 | 2022-11-22 | Global Circuit Innovations Inc. | Solder ball application for singular die |
| CN112614779B (zh) * | 2020-12-17 | 2024-12-03 | 苏州厚朴传感科技有限公司 | 一种吸气剂图形化的掩膜方式 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2137249C1 (ru) * | 1998-03-31 | 1999-09-10 | Санкт-Петербургский государственный электротехнический университет | Способ изготовления микромеханических приборов |
| US6110808A (en) * | 1998-12-04 | 2000-08-29 | Trw Inc. | Hydrogen getter for integrated microelectronic assembly |
| WO2005047558A2 (en) * | 2003-11-14 | 2005-05-26 | Saes Getters S.P.A. | Process for manufacturing devices which require a non evaporable getter material for their working |
| US20050156302A1 (en) * | 2001-07-20 | 2005-07-21 | Saes Getters S.P.A. | System for manufacturing microelectronic, microoptoelectronic or micromechanical devices |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4050914A (en) * | 1976-07-26 | 1977-09-27 | S.A.E.S. Getters S.P.A. | Accelerator for charged particles |
| US5503285A (en) * | 1993-07-26 | 1996-04-02 | Litton Systems, Inc. | Method for forming an electrostatically force balanced silicon accelerometer |
| WO1995017014A1 (en) | 1993-12-13 | 1995-06-22 | Honeywell Inc. | Integrated silicon vacuum micropackage for infrared devices |
| US5594170A (en) | 1994-06-15 | 1997-01-14 | Alliedsignal Inc. | Kip cancellation in a pendulous silicon accelerometer |
| US5656778A (en) | 1995-04-24 | 1997-08-12 | Kearfott Guidance And Navigation Corporation | Micromachined acceleration and coriolis sensor |
| JPH09196682A (ja) | 1996-01-19 | 1997-07-31 | Matsushita Electric Ind Co Ltd | 角速度センサと加速度センサ |
| US5821836A (en) | 1997-05-23 | 1998-10-13 | The Regents Of The University Of Michigan | Miniaturized filter assembly |
| US6499354B1 (en) | 1998-05-04 | 2002-12-31 | Integrated Sensing Systems (Issys), Inc. | Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices |
| JP2000182511A (ja) * | 1998-12-14 | 2000-06-30 | Yamaha Corp | 電界放射型素子の製造方法 |
| US6058027A (en) | 1999-02-16 | 2000-05-02 | Maxim Integrated Products, Inc. | Micromachined circuit elements driven by micromachined DC-to-DC converter on a common substrate |
| US6590850B2 (en) | 2001-03-07 | 2003-07-08 | Hewlett-Packard Development Company, L.P. | Packaging for storage devices using electron emissions |
| US6534850B2 (en) * | 2001-04-16 | 2003-03-18 | Hewlett-Packard Company | Electronic device sealed under vacuum containing a getter and method of operation |
| US6923625B2 (en) | 2002-01-07 | 2005-08-02 | Integrated Sensing Systems, Inc. | Method of forming a reactive material and article formed thereby |
| US6621134B1 (en) | 2002-02-07 | 2003-09-16 | Shayne Zurn | Vacuum sealed RF/microwave microresonator |
| US6635509B1 (en) | 2002-04-12 | 2003-10-21 | Dalsa Semiconductor Inc. | Wafer-level MEMS packaging |
| ITMI20030069A1 (it) * | 2003-01-17 | 2004-07-18 | Getters Spa | Dispositivi micromeccanici o microoptoelettronici con deposito di materiale getter e riscaldatore integrato. |
| US7235461B2 (en) * | 2003-04-29 | 2007-06-26 | S.O.I.Tec Silicon On Insulator Technologies | Method for bonding semiconductor structures together |
| CN1594067A (zh) * | 2003-09-08 | 2005-03-16 | 华中科技大学机械科学与工程学院 | 一种低温集成的圆片级微机电系统气密性封装工艺 |
| ITMI20050616A1 (it) | 2005-04-12 | 2006-10-13 | Getters Spa | Processo per la formazione di depositi getter miniaturizzati e depositi getrter cosi'ottenuti |
-
2005
- 2005-12-06 IT IT002343A patent/ITMI20052343A1/it unknown
-
2006
- 2006-11-20 TW TW095142822A patent/TWI325409B/zh active
- 2006-11-28 CN CN2006800394011A patent/CN101291873B/zh active Active
- 2006-11-28 DK DK06832341.9T patent/DK1957395T3/da active
- 2006-11-28 US US12/094,726 patent/US7833880B2/en active Active
- 2006-11-28 AT AT06832341T patent/ATE480495T1/de active
- 2006-11-28 RU RU2008127306/28A patent/RU2401245C2/ru not_active IP Right Cessation
- 2006-11-28 CA CA2623020A patent/CA2623020C/en active Active
- 2006-11-28 KR KR1020087016396A patent/KR101364623B1/ko active Active
- 2006-11-28 DE DE602006016850T patent/DE602006016850D1/de active Active
- 2006-11-28 WO PCT/IT2006/000824 patent/WO2007066370A1/en not_active Ceased
- 2006-11-28 JP JP2008544013A patent/JP5015947B2/ja active Active
- 2006-11-28 AU AU2006322862A patent/AU2006322862C1/en not_active Ceased
- 2006-11-28 EP EP06832341A patent/EP1957395B1/en active Active
- 2006-11-28 ES ES06832341T patent/ES2348613T3/es active Active
-
2008
- 2008-04-25 NO NO20081994A patent/NO20081994L/no not_active Application Discontinuation
- 2008-05-27 IL IL191756A patent/IL191756A/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2137249C1 (ru) * | 1998-03-31 | 1999-09-10 | Санкт-Петербургский государственный электротехнический университет | Способ изготовления микромеханических приборов |
| US6110808A (en) * | 1998-12-04 | 2000-08-29 | Trw Inc. | Hydrogen getter for integrated microelectronic assembly |
| US20050156302A1 (en) * | 2001-07-20 | 2005-07-21 | Saes Getters S.P.A. | System for manufacturing microelectronic, microoptoelectronic or micromechanical devices |
| WO2005047558A2 (en) * | 2003-11-14 | 2005-05-26 | Saes Getters S.P.A. | Process for manufacturing devices which require a non evaporable getter material for their working |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2474912C1 (ru) * | 2011-08-23 | 2013-02-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" (МИЭТ) | Способ получения газопоглощающей структуры |
| RU2522362C1 (ru) * | 2012-12-29 | 2014-07-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана (МГТУ им. Н.Э. Баумана) | Микроэлектромеханический взрыватель изохорический |
| RU2522323C1 (ru) * | 2012-12-29 | 2014-07-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) | Микроэлектромеханический взрыватель |
Also Published As
| Publication number | Publication date |
|---|---|
| DK1957395T3 (da) | 2011-01-03 |
| ES2348613T3 (es) | 2010-12-09 |
| KR101364623B1 (ko) | 2014-02-19 |
| CN101291873A (zh) | 2008-10-22 |
| JP5015947B2 (ja) | 2012-09-05 |
| CA2623020C (en) | 2015-10-20 |
| CN101291873B (zh) | 2011-06-15 |
| DE602006016850D1 (de) | 2010-10-21 |
| TWI325409B (en) | 2010-06-01 |
| EP1957395A1 (en) | 2008-08-20 |
| EP1957395B1 (en) | 2010-09-08 |
| AU2006322862C1 (en) | 2011-12-01 |
| WO2007066370A1 (en) | 2007-06-14 |
| TW200732245A (en) | 2007-09-01 |
| IL191756A0 (en) | 2008-12-29 |
| RU2008127306A (ru) | 2010-01-20 |
| AU2006322862B2 (en) | 2011-04-28 |
| KR20080081019A (ko) | 2008-09-05 |
| US7833880B2 (en) | 2010-11-16 |
| US20080293178A1 (en) | 2008-11-27 |
| AU2006322862A1 (en) | 2007-06-14 |
| IL191756A (en) | 2012-08-30 |
| CA2623020A1 (en) | 2007-06-14 |
| JP2009518191A (ja) | 2009-05-07 |
| ATE480495T1 (de) | 2010-09-15 |
| NO20081994L (no) | 2008-06-05 |
| ITMI20052343A1 (it) | 2007-06-07 |
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