IL191756A - Process for manufacturing micromechanical devices containing a getter material - Google Patents
Process for manufacturing micromechanical devices containing a getter materialInfo
- Publication number
- IL191756A IL191756A IL191756A IL19175608A IL191756A IL 191756 A IL191756 A IL 191756A IL 191756 A IL191756 A IL 191756A IL 19175608 A IL19175608 A IL 19175608A IL 191756 A IL191756 A IL 191756A
- Authority
- IL
- Israel
- Prior art keywords
- silicon
- getter material
- support part
- process according
- intermediate layer
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000008569 process Effects 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 23
- 230000008021 deposition Effects 0.000 claims description 18
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 12
- 229910052726 zirconium Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052756 noble gas Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 230000013011 mating Effects 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 238000005304 joining Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Glass Compositions (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT002343A ITMI20052343A1 (it) | 2005-12-06 | 2005-12-06 | Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti |
| PCT/IT2006/000824 WO2007066370A1 (en) | 2005-12-06 | 2006-11-28 | Process for manufacturing micromechanical devices containing a getter material and devices so manufactured |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL191756A0 IL191756A0 (en) | 2008-12-29 |
| IL191756A true IL191756A (en) | 2012-08-30 |
Family
ID=37951839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL191756A IL191756A (en) | 2005-12-06 | 2008-05-27 | Process for manufacturing micromechanical devices containing a getter material |
Country Status (17)
| Country | Link |
|---|---|
| US (1) | US7833880B2 (enExample) |
| EP (1) | EP1957395B1 (enExample) |
| JP (1) | JP5015947B2 (enExample) |
| KR (1) | KR101364623B1 (enExample) |
| CN (1) | CN101291873B (enExample) |
| AT (1) | ATE480495T1 (enExample) |
| AU (1) | AU2006322862C1 (enExample) |
| CA (1) | CA2623020C (enExample) |
| DE (1) | DE602006016850D1 (enExample) |
| DK (1) | DK1957395T3 (enExample) |
| ES (1) | ES2348613T3 (enExample) |
| IL (1) | IL191756A (enExample) |
| IT (1) | ITMI20052343A1 (enExample) |
| NO (1) | NO20081994L (enExample) |
| RU (1) | RU2401245C2 (enExample) |
| TW (1) | TWI325409B (enExample) |
| WO (1) | WO2007066370A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2922202B1 (fr) * | 2007-10-15 | 2009-11-20 | Commissariat Energie Atomique | Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication. |
| EP2484629B1 (fr) * | 2011-02-03 | 2013-06-26 | Nivarox-FAR S.A. | Pièce de micromécanique complexe ajourée |
| RU2474912C1 (ru) * | 2011-08-23 | 2013-02-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" (МИЭТ) | Способ получения газопоглощающей структуры |
| US9966319B1 (en) * | 2011-10-27 | 2018-05-08 | Global Circuit Innovations Incorporated | Environmental hardening integrated circuit method and apparatus |
| US9935028B2 (en) | 2013-03-05 | 2018-04-03 | Global Circuit Innovations Incorporated | Method and apparatus for printing integrated circuit bond connections |
| US9870968B2 (en) | 2011-10-27 | 2018-01-16 | Global Circuit Innovations Incorporated | Repackaged integrated circuit and assembly method |
| RU2523718C2 (ru) * | 2012-11-20 | 2014-07-20 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" (МИЭТ) | Нанокомпозитная газопоглощающая структура и способ ее получения |
| RU2522362C1 (ru) * | 2012-12-29 | 2014-07-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана (МГТУ им. Н.Э. Баумана) | Микроэлектромеханический взрыватель изохорический |
| RU2522323C1 (ru) * | 2012-12-29 | 2014-07-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) | Микроэлектромеханический взрыватель |
| US10160638B2 (en) | 2013-01-04 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for a semiconductor structure |
| US8847373B1 (en) * | 2013-05-07 | 2014-09-30 | Innovative Micro Technology | Exothermic activation for high vacuum packaging |
| DE102015224499A1 (de) * | 2015-12-08 | 2017-06-08 | Robert Bosch Gmbh | Spannungsreduzierung beim Laserwiederverschluss durch Temperaturerhöhung |
| DE102015226772A1 (de) * | 2015-12-29 | 2017-06-29 | Robert Bosch Gmbh | Gettervorrichtung für ein mikromechanisches Bauelement |
| JP6932491B2 (ja) * | 2016-10-31 | 2021-09-08 | 株式会社豊田中央研究所 | Ｍｅｍｓ装置を製造する方法 |
| CN106517082B (zh) * | 2016-11-14 | 2017-11-03 | 北方电子研究院安徽有限公司 | 一种mems吸气剂图形化制备方法 |
| CN109879240B (zh) * | 2017-12-06 | 2021-11-09 | 有研工程技术研究院有限公司 | 一种厚膜吸气材料的制备方法 |
| FR3083537B1 (fr) * | 2018-07-06 | 2021-07-30 | Ulis | Boitier hermetique comportant un getter, composant integrant un tel boitier hermetique et procede de fabrication associe |
| US11508680B2 (en) | 2020-11-13 | 2022-11-22 | Global Circuit Innovations Inc. | Solder ball application for singular die |
| CN112614779B (zh) * | 2020-12-17 | 2024-12-03 | 苏州厚朴传感科技有限公司 | 一种吸气剂图形化的掩膜方式 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4050914A (en) * | 1976-07-26 | 1977-09-27 | S.A.E.S. Getters S.P.A. | Accelerator for charged particles |
| US5503285A (en) * | 1993-07-26 | 1996-04-02 | Litton Systems, Inc. | Method for forming an electrostatically force balanced silicon accelerometer |
| EP0734589B1 (en) | 1993-12-13 | 1998-03-25 | Honeywell Inc. | Integrated silicon vacuum micropackage for infrared devices |
| US5594170A (en) | 1994-06-15 | 1997-01-14 | Alliedsignal Inc. | Kip cancellation in a pendulous silicon accelerometer |
| US5656778A (en) | 1995-04-24 | 1997-08-12 | Kearfott Guidance And Navigation Corporation | Micromachined acceleration and coriolis sensor |
| JPH09196682A (ja) | 1996-01-19 | 1997-07-31 | Matsushita Electric Ind Co Ltd | 角速度センサと加速度センサ |
| US5821836A (en) | 1997-05-23 | 1998-10-13 | The Regents Of The University Of Michigan | Miniaturized filter assembly |
| RU2137249C1 (ru) * | 1998-03-31 | 1999-09-10 | Санкт-Петербургский государственный электротехнический университет | Способ изготовления микромеханических приборов |
| US6499354B1 (en) * | 1998-05-04 | 2002-12-31 | Integrated Sensing Systems (Issys), Inc. | Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices |
| US6110808A (en) * | 1998-12-04 | 2000-08-29 | Trw Inc. | Hydrogen getter for integrated microelectronic assembly |
| JP2000182511A (ja) * | 1998-12-14 | 2000-06-30 | Yamaha Corp | 電界放射型素子の製造方法 |
| US6058027A (en) | 1999-02-16 | 2000-05-02 | Maxim Integrated Products, Inc. | Micromachined circuit elements driven by micromachined DC-to-DC converter on a common substrate |
| US6590850B2 (en) | 2001-03-07 | 2003-07-08 | Hewlett-Packard Development Company, L.P. | Packaging for storage devices using electron emissions |
| US6534850B2 (en) * | 2001-04-16 | 2003-03-18 | Hewlett-Packard Company | Electronic device sealed under vacuum containing a getter and method of operation |
| TW533188B (en) | 2001-07-20 | 2003-05-21 | Getters Spa | Support for microelectronic, microoptoelectronic or micromechanical devices |
| US6923625B2 (en) | 2002-01-07 | 2005-08-02 | Integrated Sensing Systems, Inc. | Method of forming a reactive material and article formed thereby |
| US6621134B1 (en) | 2002-02-07 | 2003-09-16 | Shayne Zurn | Vacuum sealed RF/microwave microresonator |
| US6635509B1 (en) | 2002-04-12 | 2003-10-21 | Dalsa Semiconductor Inc. | Wafer-level MEMS packaging |
| ITMI20030069A1 (it) * | 2003-01-17 | 2004-07-18 | Getters Spa | Dispositivi micromeccanici o microoptoelettronici con deposito di materiale getter e riscaldatore integrato. |
| US7235461B2 (en) * | 2003-04-29 | 2007-06-26 | S.O.I.Tec Silicon On Insulator Technologies | Method for bonding semiconductor structures together |
| CN1594067A (zh) * | 2003-09-08 | 2005-03-16 | 华中科技大学机械科学与工程学院 | 一种低温集成的圆片级微机电系统气密性封装工艺 |
| ITMI20032209A1 (it) * | 2003-11-14 | 2005-05-15 | Getters Spa | Processo per la produzione di dispositivi che richiedono per il loro funzionamento un materiale getter non evaporabile. |
| ITMI20050616A1 (it) | 2005-04-12 | 2006-10-13 | Getters Spa | Processo per la formazione di depositi getter miniaturizzati e depositi getrter cosi'ottenuti |
-
2005
- 2005-12-06 IT IT002343A patent/ITMI20052343A1/it unknown
-
2006
- 2006-11-20 TW TW095142822A patent/TWI325409B/zh active
- 2006-11-28 ES ES06832341T patent/ES2348613T3/es active Active
- 2006-11-28 AU AU2006322862A patent/AU2006322862C1/en not_active Ceased
- 2006-11-28 AT AT06832341T patent/ATE480495T1/de active
- 2006-11-28 JP JP2008544013A patent/JP5015947B2/ja active Active
- 2006-11-28 DK DK06832341.9T patent/DK1957395T3/da active
- 2006-11-28 WO PCT/IT2006/000824 patent/WO2007066370A1/en not_active Ceased
- 2006-11-28 EP EP06832341A patent/EP1957395B1/en active Active
- 2006-11-28 DE DE602006016850T patent/DE602006016850D1/de active Active
- 2006-11-28 CA CA2623020A patent/CA2623020C/en active Active
- 2006-11-28 US US12/094,726 patent/US7833880B2/en active Active
- 2006-11-28 RU RU2008127306/28A patent/RU2401245C2/ru not_active IP Right Cessation
- 2006-11-28 CN CN2006800394011A patent/CN101291873B/zh active Active
- 2006-11-28 KR KR1020087016396A patent/KR101364623B1/ko active Active
-
2008
- 2008-04-25 NO NO20081994A patent/NO20081994L/no not_active Application Discontinuation
- 2008-05-27 IL IL191756A patent/IL191756A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| US20080293178A1 (en) | 2008-11-27 |
| US7833880B2 (en) | 2010-11-16 |
| ATE480495T1 (de) | 2010-09-15 |
| CA2623020C (en) | 2015-10-20 |
| AU2006322862A1 (en) | 2007-06-14 |
| IL191756A0 (en) | 2008-12-29 |
| DE602006016850D1 (de) | 2010-10-21 |
| KR20080081019A (ko) | 2008-09-05 |
| RU2401245C2 (ru) | 2010-10-10 |
| TW200732245A (en) | 2007-09-01 |
| CN101291873A (zh) | 2008-10-22 |
| NO20081994L (no) | 2008-06-05 |
| WO2007066370A1 (en) | 2007-06-14 |
| CN101291873B (zh) | 2011-06-15 |
| AU2006322862C1 (en) | 2011-12-01 |
| CA2623020A1 (en) | 2007-06-14 |
| KR101364623B1 (ko) | 2014-02-19 |
| EP1957395B1 (en) | 2010-09-08 |
| TWI325409B (en) | 2010-06-01 |
| ES2348613T3 (es) | 2010-12-09 |
| DK1957395T3 (da) | 2011-01-03 |
| JP5015947B2 (ja) | 2012-09-05 |
| AU2006322862B2 (en) | 2011-04-28 |
| RU2008127306A (ru) | 2010-01-20 |
| EP1957395A1 (en) | 2008-08-20 |
| JP2009518191A (ja) | 2009-05-07 |
| ITMI20052343A1 (it) | 2007-06-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IL191756A (en) | Process for manufacturing micromechanical devices containing a getter material | |
| US7138293B2 (en) | Wafer level packaging technique for microdevices | |
| EP1961036B1 (en) | Wafer level hermetic bond using metal alloy with raised feature | |
| US7863070B2 (en) | Methods for encapsulating microelectromechanical (MEM) devices on a wafer scale | |
| EP1352877B1 (en) | Wafer-level MEMS packaging | |
| US7204737B2 (en) | Hermetically sealed microdevice with getter shield | |
| US8039285B2 (en) | Thin film getter protection | |
| US20070218585A1 (en) | Encapsulation in a hermetic cavity of a microelectronic composite, particularly of a mems | |
| US8981544B2 (en) | Packaging structure of a micro-device including a getter material | |
| CN106029555A (zh) | 用于在密封腔体中包装微电子器件并控制带有专用孔的腔体的气氛的方法 | |
| US8349660B2 (en) | Cavity closure process for at least one microelectronic device | |
| CN101168437A (zh) | 功能元件 | |
| EP2354083A1 (fr) | Procede d'encapsulation d'un microcomposant par un capot renforce mecaniquement | |
| JP2023514069A (ja) | デバイス用ウェーハレベルパッケージ | |
| US20050077342A1 (en) | Securing a cover for a device | |
| HK1123539A (en) | Process for manufacturing micromechanical devices containing a getter material and devices so manufactured | |
| ATOMIQUE | Souriau et al.(43) Pub. Date: Sep. 4, 2008 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed |