RU2265073C2 - Способ получения контактной массы - Google Patents
Способ получения контактной массы Download PDFInfo
- Publication number
- RU2265073C2 RU2265073C2 RU2002131157/15A RU2002131157A RU2265073C2 RU 2265073 C2 RU2265073 C2 RU 2265073C2 RU 2002131157/15 A RU2002131157/15 A RU 2002131157/15A RU 2002131157 A RU2002131157 A RU 2002131157A RU 2265073 C2 RU2265073 C2 RU 2265073C2
- Authority
- RU
- Russia
- Prior art keywords
- copper
- mass
- contact mass
- heat treatment
- silicon
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 64
- 229910052802 copper Inorganic materials 0.000 claims abstract description 57
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 238000010438 heat treatment Methods 0.000 claims abstract description 37
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 239000011863 silicon-based powder Substances 0.000 claims description 6
- 125000001188 haloalkyl group Chemical group 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- PDYXSJSAMVACOH-UHFFFAOYSA-N [Cu].[Zn].[Sn] Chemical compound [Cu].[Zn].[Sn] PDYXSJSAMVACOH-UHFFFAOYSA-N 0.000 claims 1
- 239000012974 tin catalyst Substances 0.000 claims 1
- 239000003054 catalyst Substances 0.000 abstract description 15
- 239000000126 substance Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 150000001350 alkyl halides Chemical class 0.000 abstract 2
- 229910018067 Cu3Si Inorganic materials 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 27
- 230000003993 interaction Effects 0.000 description 23
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 20
- 239000011135 tin Substances 0.000 description 19
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical class C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 description 18
- 229910052718 tin Inorganic materials 0.000 description 18
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 15
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 11
- 229940050176 methyl chloride Drugs 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 229910052725 zinc Inorganic materials 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- 238000011065 in-situ storage Methods 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 5
- 239000005055 methyl trichlorosilane Substances 0.000 description 5
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 5
- -1 zinc halide Chemical class 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000009835 boiling Methods 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000011856 silicon-based particle Substances 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000004594 Masterbatch (MB) Substances 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- 239000006011 Zinc phosphide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001348 alkyl chlorides Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001734 carboxylic acid salts Chemical class 0.000 description 1
- NEHMKBQYUWJMIP-NJFSPNSNSA-N chloro(114C)methane Chemical compound [14CH3]Cl NEHMKBQYUWJMIP-NJFSPNSNSA-N 0.000 description 1
- QABCGOSYZHCPGN-UHFFFAOYSA-N chloro(dimethyl)silicon Chemical compound C[Si](C)Cl QABCGOSYZHCPGN-UHFFFAOYSA-N 0.000 description 1
- HRYZWHHZPQKTII-UHFFFAOYSA-N chloroethane Chemical compound CCCl HRYZWHHZPQKTII-UHFFFAOYSA-N 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 1
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 description 1
- KTQYJQFGNYHXMB-UHFFFAOYSA-N dichloro(methyl)silicon Chemical compound C[Si](Cl)Cl KTQYJQFGNYHXMB-UHFFFAOYSA-N 0.000 description 1
- KTPJDYNQZVAFBU-UHFFFAOYSA-N dichloro-[chloro(dimethyl)silyl]-methylsilane Chemical compound C[Si](C)(Cl)[Si](C)(Cl)Cl KTPJDYNQZVAFBU-UHFFFAOYSA-N 0.000 description 1
- 229960003750 ethyl chloride Drugs 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000005048 methyldichlorosilane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SNMVRZFUUCLYTO-UHFFFAOYSA-N n-propyl chloride Chemical compound CCCCl SNMVRZFUUCLYTO-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 229940048462 zinc phosphide Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/18—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on silicides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/06—Metal silicides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
- C07F7/16—Preparation thereof from silicon and halogenated hydrocarbons direct synthesis
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Catalysts (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/553,912 US6528674B1 (en) | 2000-04-20 | 2000-04-20 | Method for preparing a contact mass |
| US09/553,912 | 2000-04-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2002131157A RU2002131157A (ru) | 2004-03-27 |
| RU2265073C2 true RU2265073C2 (ru) | 2005-11-27 |
Family
ID=24211281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2002131157/15A RU2265073C2 (ru) | 2000-04-20 | 2001-02-20 | Способ получения контактной массы |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6528674B1 (fr) |
| EP (1) | EP1280733A2 (fr) |
| JP (1) | JP2003531007A (fr) |
| KR (1) | KR20020093931A (fr) |
| CN (1) | CN1250452C (fr) |
| AU (1) | AU2001241595A1 (fr) |
| RU (1) | RU2265073C2 (fr) |
| WO (1) | WO2001081354A2 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2575897C2 (ru) * | 2014-07-18 | 2016-02-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Курганский государственный университет" | Способ получения двухкомпонентного сплава, содержащего медь и кремний, и устройство для его осуществления. |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6423860B1 (en) * | 2000-09-05 | 2002-07-23 | General Electric Company | Method for promoting dialkyldihalosilane formation during direct method alkylhalosilane production |
| US7153991B2 (en) * | 2000-12-01 | 2006-12-26 | General Electric Company | Rochow-Müller direct synthesis using nanosized copper catalyst precursors |
| US7858818B2 (en) * | 2001-01-31 | 2010-12-28 | Momentive Performance Materials Inc. | Nanosized copper catalyst precursors for the direct synthesis of trialkoxysilanes |
| US7339068B2 (en) | 2001-01-31 | 2008-03-04 | Momentive Performance Materials Inc. | Nanosized copper catalyst precursors for the direct synthesis of trialkoxysilanes |
| JP3775491B2 (ja) * | 2001-08-30 | 2006-05-17 | 信越化学工業株式会社 | オルガノハロシランの製造方法 |
| DE50309734D1 (de) * | 2002-04-17 | 2008-06-12 | Wacker Chemie Ag | Verfahren zur herstellung von halosilanen unter mikrowellenenergiebeaufschlagung |
| US20030220514A1 (en) * | 2002-05-20 | 2003-11-27 | General Electric Company | Method for preparing a contact mass |
| JP4788866B2 (ja) * | 2004-10-19 | 2011-10-05 | 信越化学工業株式会社 | フェニルクロロシランの製造方法 |
| US7230138B2 (en) * | 2004-12-10 | 2007-06-12 | Air Products And Chemicals, Inc. | Bis(3-alkoxypropan-2-ol) sulfides, sulfoxides, and sulfones: new preparative methods |
| US8772525B2 (en) * | 2010-05-28 | 2014-07-08 | Dow Corning Corporation | Method for preparing a diorganodihalosilane |
| DE102011006869A1 (de) | 2011-04-06 | 2012-10-11 | Wacker Chemie Ag | Verfahren zur Herstellung einer Kontaktmasse |
| CN103566955B (zh) * | 2012-08-02 | 2015-05-13 | 中国石油天然气股份有限公司 | 一种提高二甲基二氯硅烷选择性的催化剂及其应用 |
| CN105435788B (zh) * | 2014-06-16 | 2018-03-30 | 新特能源股份有限公司 | 脱氯加氢工艺中的四氯化硅还原方法及含有Cu‑Si金属键的铜‑硅合金催化剂的制备方法 |
| CN104151343B (zh) * | 2014-07-21 | 2016-09-07 | 鲁西化工集团股份有限公司硅化工分公司 | 一种提高甲基氯硅烷合成中硅粉利用率的添加剂 |
| DE102014225460A1 (de) | 2014-12-10 | 2016-06-16 | Wacker Chemie Ag | Verfahren zur Direktsynthese von Methylchlorsilanen in Wirbelschichtreaktoren |
| CN105399101A (zh) * | 2015-12-14 | 2016-03-16 | 辽宁石油化工大学 | 一种冷氢化制备三氯氢硅的方法 |
| CN110813291B (zh) * | 2019-10-11 | 2021-04-13 | 中国科学院过程工程研究所 | 利用有机硅单体三甲氧基硅烷生产中的废触体制备铜基复合催化剂的方法及用途 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2380995A (en) | 1941-09-26 | 1945-08-07 | Gen Electric | Preparation of organosilicon halides |
| BE481523A (fr) | 1947-02-27 | |||
| US4314908A (en) | 1979-10-24 | 1982-02-09 | Union Carbide Corporation | Preparation of reaction mass for the production of methylchlorosilane |
| US4500724A (en) | 1983-07-28 | 1985-02-19 | General Electric Company | Method for making alkylhalosilanes |
| US5061672A (en) * | 1990-01-30 | 1991-10-29 | Elkem Metals Company | Active mass for making organohalosilanes |
| US5250716A (en) * | 1992-05-28 | 1993-10-05 | Mui Jeffrey Y P | Method for making a silicon/copper contact mass suitable for direct reaction |
| EP0832895A3 (fr) * | 1996-09-30 | 1999-09-01 | Shin-Etsu Chemical Co., Ltd. | Préparation d'alkylhalosilanes |
| JP3362619B2 (ja) | 1996-12-13 | 2003-01-07 | 信越化学工業株式会社 | アルキルハロシランの製造方法 |
| US6057469A (en) * | 1997-07-24 | 2000-05-02 | Pechiney Electrometallurgie | Process for manufacturing active silicon powder for the preparation of alkyl- or aryl-halosilanes |
| US5973177A (en) * | 1998-07-29 | 1999-10-26 | Dow Corning Corporation | Method for selecting silicon metalloid having improved performance in the direct process for making organohalosilanes |
| US6005130A (en) * | 1998-09-28 | 1999-12-21 | General Electric Company | Method for making alkylhalosilanes |
-
2000
- 2000-04-20 US US09/553,912 patent/US6528674B1/en not_active Expired - Fee Related
-
2001
- 2001-02-20 KR KR1020027014041A patent/KR20020093931A/ko not_active Application Discontinuation
- 2001-02-20 JP JP2001578442A patent/JP2003531007A/ja not_active Withdrawn
- 2001-02-20 EP EP01912855A patent/EP1280733A2/fr not_active Withdrawn
- 2001-02-20 CN CNB018115160A patent/CN1250452C/zh not_active Expired - Fee Related
- 2001-02-20 RU RU2002131157/15A patent/RU2265073C2/ru not_active IP Right Cessation
- 2001-02-20 WO PCT/US2001/005417 patent/WO2001081354A2/fr not_active Application Discontinuation
- 2001-02-20 AU AU2001241595A patent/AU2001241595A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2575897C2 (ru) * | 2014-07-18 | 2016-02-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Курганский государственный университет" | Способ получения двухкомпонентного сплава, содержащего медь и кремний, и устройство для его осуществления. |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2001241595A1 (en) | 2001-11-07 |
| CN1250452C (zh) | 2006-04-12 |
| EP1280733A2 (fr) | 2003-02-05 |
| CN1437562A (zh) | 2003-08-20 |
| US6528674B1 (en) | 2003-03-04 |
| KR20020093931A (ko) | 2002-12-16 |
| WO2001081354A3 (fr) | 2002-04-04 |
| RU2002131157A (ru) | 2004-03-27 |
| WO2001081354A2 (fr) | 2001-11-01 |
| JP2003531007A (ja) | 2003-10-21 |
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