RU2235747C2 - Способ химико-механической планаризации и полученные с его помощью изделия - Google Patents

Способ химико-механической планаризации и полученные с его помощью изделия Download PDF

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Publication number
RU2235747C2
RU2235747C2 RU2002107429/04A RU2002107429A RU2235747C2 RU 2235747 C2 RU2235747 C2 RU 2235747C2 RU 2002107429/04 A RU2002107429/04 A RU 2002107429/04A RU 2002107429 A RU2002107429 A RU 2002107429A RU 2235747 C2 RU2235747 C2 RU 2235747C2
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Russia
Prior art keywords
alumina
particles
abrasive
alpha
powder
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RU2002107429/04A
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English (en)
Russian (ru)
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RU2002107429A (ru
Inventor
Аджай К. ГАРГ (IN)
Аджай К. ГАРГ
Брахманандам В. ТАНИКЕЛЛА (US)
Брахманандам В. Таникелла
Уиль м Р. ДЕЛЭНИ (US)
Уильям Р. ДЕЛЭНИ
Original Assignee
Сент-Гобэн Керамикс Энд Пластикс, Инк.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C01F7/44—Dehydration of aluminium oxide or hydroxide, i.e. all conversions of one form into another involving a loss of water
    • C01F7/441—Dehydration of aluminium oxide or hydroxide, i.e. all conversions of one form into another involving a loss of water by calcination
    • C01F7/442—Dehydration of aluminium oxide or hydroxide, i.e. all conversions of one form into another involving a loss of water by calcination in presence of a calcination additive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/01—Crystal-structural characteristics depicted by a TEM-image
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C01P2004/52—Particles with a specific particle size distribution highly monodisperse size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Compositions Of Oxide Ceramics (AREA)
RU2002107429/04A 1999-10-06 2000-08-30 Способ химико-механической планаризации и полученные с его помощью изделия RU2235747C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/413,518 1999-10-06
US09/413,518 US6258137B1 (en) 1992-02-05 1999-10-06 CMP products

Publications (2)

Publication Number Publication Date
RU2002107429A RU2002107429A (ru) 2003-09-27
RU2235747C2 true RU2235747C2 (ru) 2004-09-10

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RU2002107429/04A RU2235747C2 (ru) 1999-10-06 2000-08-30 Способ химико-механической планаризации и полученные с его помощью изделия

Country Status (12)

Country Link
US (1) US6258137B1 (enExample)
EP (1) EP1228161A1 (enExample)
JP (3) JP2003511850A (enExample)
KR (1) KR100485205B1 (enExample)
CN (1) CN100396749C (enExample)
AU (1) AU754060B2 (enExample)
BR (1) BR0014533A (enExample)
CA (1) CA2382724C (enExample)
RU (1) RU2235747C2 (enExample)
TW (1) TWI261068B (enExample)
WO (1) WO2001025366A1 (enExample)
ZA (1) ZA200201091B (enExample)

Cited By (5)

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RU2392226C1 (ru) * 2009-01-26 2010-06-20 Закрытое акционерное общество "Центр инновационных керамических нанотехнологий Нанокомпозит" Способ получения нанодисперсного порошка альфа-оксида алюминия
RU2579597C2 (ru) * 2009-11-13 2016-04-10 Басф Се Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы
RU2669598C2 (ru) * 2013-07-11 2018-10-12 Басф Се Композиция для химико-механической полировки (cmp), содержащая бензотриазольные производные в качестве ингибиторов коррозии
RU2687649C2 (ru) * 2017-10-04 2019-05-15 Общество с ограниченной ответственностью "КРОКУС НАНОЭЛЕКТРОНИКА" Способ химико-механической полировки толстых слоев кобальтсодержащих сплавов
RU2842564C1 (ru) * 2025-01-14 2025-06-30 Общество С Ограниченной Ответственностью "С-Инновации" (Ооо "С-Инновации") Способ непрерывной планаризации длинномерной ленты-подложки для высокотемпературных сверхпроводников второго поколения

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CN100396749C (zh) 2008-06-25
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US6258137B1 (en) 2001-07-10
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TWI261068B (en) 2006-09-01
CA2382724A1 (en) 2001-04-12
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AU7090200A (en) 2001-05-10
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