RU2018146553A3 - - Google Patents

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RU2018146553A3
RU2018146553A3 RU2018146553A RU2018146553A RU2018146553A3 RU 2018146553 A3 RU2018146553 A3 RU 2018146553A3 RU 2018146553 A RU2018146553 A RU 2018146553A RU 2018146553 A RU2018146553 A RU 2018146553A RU 2018146553 A3 RU2018146553 A3 RU 2018146553A3
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RU2018146553A
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RU2018146553A (ru
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • B32B9/007—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D31/00—Materials specially adapted for outerwear
    • A41D31/04—Materials specially adapted for outerwear characterised by special function or use
    • A41D31/10—Impermeable to liquids, e.g. waterproof; Liquid-repellent
    • A41D31/102—Waterproof and breathable
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B01D67/0039—Inorganic membrane manufacture
    • B01D67/0072—Inorganic membrane manufacture by deposition from the gaseous phase, e.g. sputtering, CVD, PVD
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B01D67/0039—Inorganic membrane manufacture
    • B01D67/0053—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes
    • B01D67/006—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes by elimination of segments of the precursor, e.g. nucleation-track membranes, lithography or laser methods
    • B01D67/0062—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes by elimination of segments of the precursor, e.g. nucleation-track membranes, lithography or laser methods by micromachining techniques, e.g. using masking and etching steps, photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/10—Supported membranes; Membrane supports
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/10—Supported membranes; Membrane supports
    • B01D69/107—Organic support material
    • B01D69/1071—Woven, non-woven or net mesh
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/10—Supported membranes; Membrane supports
    • B01D69/108—Inorganic support material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/021—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/021—Carbon
    • B01D71/0211—Graphene or derivates thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/022—Metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/024—Oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2323/00—Details relating to membrane preparation
    • B01D2323/64—Use of a temporary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2325/00—Details relating to properties of membranes
    • B01D2325/04—Characteristic thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2305/00—Condition, form or state of the layers or laminate
    • B32B2305/02—Cellular or porous
    • B32B2305/026—Porous
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/724—Permeability to gases, adsorption
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/726—Permeability to liquids, absorption
    • B32B2307/7265—Non-permeable
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2437/00—Clothing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/16—Pore diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Textile Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Laminated Bodies (AREA)
RU2018146553A 2016-06-10 2017-06-09 Способ изготовления пористых графеновых мембран и мембраны, изготовленные с использованием этого способа RU2745631C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16174017.0A EP3254750A1 (en) 2016-06-10 2016-06-10 Method for making porous graphene membranes and membranes produced using the method
EP16174017.0 2016-06-10
PCT/EP2017/064156 WO2017212039A1 (en) 2016-06-10 2017-06-09 Method for making porous graphene membranes and membranes produced using the method

Publications (3)

Publication Number Publication Date
RU2018146553A RU2018146553A (ru) 2020-07-13
RU2018146553A3 true RU2018146553A3 (ru) 2020-10-23
RU2745631C2 RU2745631C2 (ru) 2021-03-29

Family

ID=56131380

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2018146553A RU2745631C2 (ru) 2016-06-10 2017-06-09 Способ изготовления пористых графеновых мембран и мембраны, изготовленные с использованием этого способа

Country Status (9)

Country Link
US (1) US11518142B2 (ru)
EP (2) EP3254750A1 (ru)
JP (1) JP7131774B2 (ru)
KR (1) KR102396120B1 (ru)
CN (1) CN109310954B (ru)
AU (1) AU2017276780B2 (ru)
CA (1) CA3026791C (ru)
RU (1) RU2745631C2 (ru)
WO (1) WO2017212039A1 (ru)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11524898B2 (en) 2016-11-04 2022-12-13 Massachusetts Institute Of Technology Formation of pores in atomically thin layers
US20180330842A1 (en) * 2017-05-15 2018-11-15 The Trustees Of Columbia University In The City Of New York Layered metal-graphene-metal laminate structure
WO2019127335A1 (zh) * 2017-12-29 2019-07-04 广东工业大学 一种氧化石墨烯过滤膜制造方法
CN108033440B (zh) * 2018-01-16 2021-07-13 上海理工大学 一种高比表面积多孔褶皱石墨烯的制备方法
WO2020045695A1 (ko) * 2018-08-28 2020-03-05 한국에너지기술연구원 나노 기공을 갖는 초박막 그래핀 멤브레인 제조 방법
KR102141512B1 (ko) 2018-09-11 2020-08-05 재단법인 나노기반소프트일렉트로닉스연구단 화학기상증착법을 이용한 다층 그래핀 및 그의 제조방법
EP3931150A4 (en) * 2019-03-01 2022-12-07 Commonwealth Scientific and Industrial Research Organisation VERTICAL BRANCHING GRAPH
CN110125385A (zh) * 2019-04-15 2019-08-16 中国航发北京航空材料研究院 一种基于原位合成的石墨烯铜基复合材料的制备方法
CN112121847B (zh) * 2019-06-25 2024-01-05 高化学株式会社 一种二甲醚羰基化制备乙酸甲酯用催化剂及其制备和应用
CN110627051B (zh) * 2019-10-17 2021-06-15 武汉大学 具有均匀孔洞的石墨烯膜及其制备方法
CN114901386A (zh) 2019-11-28 2022-08-12 苏黎世联邦理工学院 用于制造多孔过滤膜的方法
KR20220112295A (ko) 2019-12-19 2022-08-10 하이큐 마테리알스 아게 다공성 그래핀 멤브레인의 제조 방법 및 이 방법을 사용하여 제조된 멤브레인
WO2021133159A1 (en) * 2019-12-24 2021-07-01 Mimos Berhad A method of forming graphene nanomesh
JP2021135403A (ja) * 2020-02-27 2021-09-13 凸版印刷株式会社 ペリクル膜、ペリクル、膜、グラフェンシート及びその製造方法
CN111847432B (zh) * 2020-07-24 2023-08-29 北京石墨烯研究院 大面积多层石墨烯及其制备方法
CN112408377B (zh) * 2020-12-01 2021-12-28 江苏星途新材料科技有限公司 一种多孔的改性氧化石墨烯膜及其制备方法
CN112622357A (zh) * 2020-12-02 2021-04-09 成都飞机工业（集团）有限责任公司 多层多孔高导电性能的石墨烯薄膜及其制造方法
WO2022184807A1 (en) 2021-03-04 2022-09-09 Heiq Materials Ag Artificial solid-electrolyte interphase layer material and uses thereof
KR102565154B1 (ko) * 2021-04-08 2023-08-09 주식회사 유디 고순도 그래핀 플레이크의 친환경 양산 제조방법
CN113213461A (zh) * 2021-05-24 2021-08-06 崔云 一种晶形石墨烯及其制备方法和应用
CN114247305B (zh) * 2021-12-21 2023-06-20 郑州大学 一种二维纳米岛@石墨烯异质结自组装疏水纳滤膜及其制备方法
CN114931866B (zh) * 2022-03-15 2023-04-14 电子科技大学 一种多孔高分子聚合材料过滤膜的制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102656025A (zh) * 2009-11-26 2012-09-05 株式会社普利司通 充气轮胎
KR101325575B1 (ko) 2010-12-28 2013-11-05 성균관대학교산학협력단 다공성 나노구조를 갖는 그래핀막의 제조방법
WO2012170099A2 (en) * 2011-03-22 2012-12-13 Massachusetts Institute Of Technology Direct synthesis of patterned graphene by deposition
KR101813170B1 (ko) 2011-04-11 2017-12-28 삼성전자주식회사 그래핀 함유 분리막
WO2013028826A2 (en) * 2011-08-25 2013-02-28 Wisconsin Alumni Research Foundation Barrier guided growth of microstructured and nanostructured graphene and graphite
CN103215469B (zh) * 2012-01-19 2015-08-19 中国科学院上海硅酸盐研究所 多孔石墨烯、石墨烯/多孔金属复合材料以及它们的制备方法
CN102583337A (zh) 2012-01-20 2012-07-18 中国科学院上海硅酸盐研究所 多孔结构石墨烯材料的制备方法
KR101638060B1 (ko) * 2012-01-26 2016-07-08 엠파이어 테크놀로지 디벨롭먼트 엘엘씨 주기적인 옹스트롬 단위의 구멍을 갖는 그래핀 멤브레인
CN103241728B (zh) 2012-02-14 2016-01-20 中国科学院上海微系统与信息技术研究所 利用多孔阳极氧化铝为模板化学气相沉积制备石墨烯纳米孔阵列的方法
US20150273401A1 (en) 2012-11-30 2015-10-01 Empire Technology Development Llc Selective membrane supported on nanoporous graphene
US9656214B2 (en) * 2012-11-30 2017-05-23 Empire Technology Development Llc Graphene membrane laminated to porous woven or nonwoven support
TWI456083B (zh) 2013-04-09 2014-10-11 Univ Nat Sun Yat Sen 以化學氣相沉積程序於多孔洞基材形成大面積石墨烯層之方法
KR102232418B1 (ko) 2014-04-29 2021-03-29 엘지전자 주식회사 그래핀 멤브레인 및 그 제조 방법
US10748672B2 (en) * 2014-07-17 2020-08-18 Global Graphene Group, Inc. Highly conductive graphene foams and process for producing same
CN104261403B (zh) 2014-10-27 2016-05-04 福州大学 一种三维多孔结构石墨烯的制备方法
US9945027B2 (en) * 2015-11-20 2018-04-17 Fourté International, Sdn. Bhd. High conductivity graphene-metal composite and methods of manufacture
CN105647159B (zh) 2016-01-04 2018-08-21 杭州师范大学 一种石墨烯带修饰的聚合物基泡沫材料及其制备方法与应用
CN105603384B (zh) * 2016-01-26 2019-01-18 无锡格菲电子薄膜科技有限公司 一种cvd沉积石墨烯膜的规模化生产方法

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