RU2016115865A - Электронное устройство, содержащее органические материалы - Google Patents

Электронное устройство, содержащее органические материалы Download PDF

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RU2016115865A
RU2016115865A RU2016115865A RU2016115865A RU2016115865A RU 2016115865 A RU2016115865 A RU 2016115865A RU 2016115865 A RU2016115865 A RU 2016115865A RU 2016115865 A RU2016115865 A RU 2016115865A RU 2016115865 A RU2016115865 A RU 2016115865A
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RU2672778C2 (ru
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Бернд ЦИММЕРМАНН
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Флексенэбл Лимитед
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
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    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
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    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66409—Unipolar field-effect transistors
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    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
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    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
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Claims (9)

1. Способ, включающий формирование на общей подложке одной или более серий многослойных электронных устройств с последующим разделением указанных устройств; каждое из которых содержит один или более слоев органического материала, при этом способ включает нанесение единственного или каждого из указанных слоев в виде слоя, имеющего протяженность по меньшей мере от одного конца одной или более серий устройств до противоположного конца одной или более серий устройств.
2. Способ по п. 1, в котором каждое электронное устройство содержит массив транзисторов, при этом один или более слоев органического материала, наносимых в виде одного или более непрерывных слоев, содержит один или более из следующих слоев: полупроводниковый слой, задающий полупроводниковые каналы транзисторов; диэлектрический слой, образующий диэлектрик затворов транзисторов, и один или более изоляторных слоев, нанесенных между проводящими слоями.
3. Способ по п. 1, в котором электронные устройства содержат по меньшей мере один проводящий слой, задающий массив проводников, активируемых через соответствующие выходные терминалы одного или более чипов драйвера, а способ включает формирование контактов для указанных одного или более чипов драйвера с локализацией указанных контактов поверх одного или более слоев органического материала, наносимых в виде непрерывных слоев, при этом указанные контакты связаны с соответствующими проводниками указанного массива через указанные один или более слоев органического материала.
4. Способ по п. 1, в котором устройства содержат по меньшей мере три проводящих слоя, расположенные на соответствующих уровнях, при этом способ дополнительно включает осуществление сжатия периферийной области указанных одного или более слоев органического материала, нанесенных в виде непрерывных слоев, и создание одного или более проводящих перемычек между одним или более частями верхнего проводящего слоя в указанной периферийной области и одной или более частями промежуточного проводящего слоя, смещенными внутрь относительно указанной периферийной области, через одну или более частей нижнего проводящего слоя, расположенных между указанной периферийной областью и областью, смещенной внутрь относительно периферийной области.
5. Способ по п. 4, в котором верхний проводящий слой задает контакты затвора и истока для массива транзисторов, а одна или более частей указанного промежуточного проводящего слоя содержат один или более проводников затвора, образующих электроды затвора для указанного массива транзисторов, и/или один или более проводников истока, образующих электроды истока для массива транзисторов.
6. Способ по любому из предыдущих пунктов, дополнительно включающий:
формирование по меньшей мере одного закорачивающего проводника, связывающего группу проводников, расположенных в проводящем слое под указанными одним или более слоями органического материала, нанесенными в виде непрерывных слоев;
формирование по меньшей мере одной межслоевой проводящей перемычки между указанным закорачивающим проводником и контактом, сформированным поверх указанных одного или более слоев органического материала, через указанные один или более слоев, нанесенных в виде непрерывных слоев, и
осуществление электрического тестирования через указанный контакт с последующим изолированием закорачивающего проводника от указанной группы проводников путем удаления одной или более частей указанного проводящего слоя и одной или более частей одного или более слоев органического материала, расположенных поверх указанных одной или более частей проводящего слоя.
RU2016115865A 2013-10-08 2014-10-07 Электронное устройство, содержащее органические материалы RU2672778C2 (ru)

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TWI651876B (zh) 2019-02-21
RU2016115865A3 (ru) 2018-05-24
CN105705990A (zh) 2016-06-22
GB2519081A (en) 2015-04-15
GB2519081B (en) 2019-07-03
DE112014004633T5 (de) 2016-07-28
CN105705990B (zh) 2020-09-29
RU2672778C2 (ru) 2018-11-19
GB201317760D0 (en) 2013-11-20
WO2015052200A1 (en) 2015-04-16

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