RU2015121968A - Подзонное инфракрасное облучение для кристаллов детекторов - Google Patents
Подзонное инфракрасное облучение для кристаллов детекторов Download PDFInfo
- Publication number
- RU2015121968A RU2015121968A RU2015121968A RU2015121968A RU2015121968A RU 2015121968 A RU2015121968 A RU 2015121968A RU 2015121968 A RU2015121968 A RU 2015121968A RU 2015121968 A RU2015121968 A RU 2015121968A RU 2015121968 A RU2015121968 A RU 2015121968A
- Authority
- RU
- Russia
- Prior art keywords
- semiconductor layer
- infrared
- sources
- radiation
- directly converting
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261724317P | 2012-11-09 | 2012-11-09 | |
| US61/724,317 | 2012-11-09 | ||
| PCT/IB2013/059990 WO2014072939A1 (en) | 2012-11-09 | 2013-11-08 | Sub-band infra-red irradiation for detector crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU2015121968A true RU2015121968A (ru) | 2017-01-10 |
Family
ID=49713431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2015121968A RU2015121968A (ru) | 2012-11-09 | 2013-11-08 | Подзонное инфракрасное облучение для кристаллов детекторов |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9664558B2 (enExample) |
| EP (1) | EP2917766B1 (enExample) |
| JP (1) | JP6310471B2 (enExample) |
| CN (1) | CN104781695B (enExample) |
| BR (1) | BR112015010277A2 (enExample) |
| RU (1) | RU2015121968A (enExample) |
| WO (1) | WO2014072939A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BR112016010217A2 (pt) | 2014-09-26 | 2017-08-08 | Koninklijke Philips Nv | detector de radiação, método para operação de um detector de radiação, e, aparelho de imageamento para a geração de imagens de um objeto |
| US9571765B2 (en) | 2015-06-25 | 2017-02-14 | General Electric Company | Universal four-side buttable digital CMOS imager |
| JP6243578B1 (ja) * | 2015-07-09 | 2017-12-06 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 直接変換放射線検出器 |
| CN108139494B (zh) | 2015-10-20 | 2022-07-26 | 皇家飞利浦有限公司 | 用于直接转换x射线检测器的极化校正 |
| DE102015220793A1 (de) * | 2015-10-23 | 2017-04-27 | Siemens Healthcare Gmbh | Röntgendetektor und/oder Gammadetektor mit Lichtbias |
| US9588240B1 (en) | 2015-10-27 | 2017-03-07 | General Electric Company | Digital readout architecture for four side buttable digital X-ray detector |
| US10283557B2 (en) | 2015-12-31 | 2019-05-07 | General Electric Company | Radiation detector assembly |
| US10686003B2 (en) | 2015-12-31 | 2020-06-16 | General Electric Company | Radiation detector assembly |
| DE102016210935B4 (de) * | 2016-06-20 | 2020-07-09 | Siemens Healthcare Gmbh | Röntgendetektor mit intransparenter Zwischenschicht |
| EP3516426B1 (en) * | 2016-09-23 | 2021-04-28 | Shenzhen Xpectvision Technology Co., Ltd. | Systems with multiple layers of semiconductor x-ray detectors |
| EP3422051A1 (en) | 2017-06-28 | 2019-01-02 | Koninklijke Philips N.V. | Direct conversion radiation detection |
| CN112384827B (zh) * | 2018-07-12 | 2024-08-02 | 深圳帧观德芯科技有限公司 | 制造辐射探测器的方法 |
| EP3605151A1 (en) * | 2018-08-01 | 2020-02-05 | Koninklijke Philips N.V. | Photon counting detector |
| DE102018219061A1 (de) * | 2018-10-25 | 2020-04-30 | Redlen Technologies, Inc. | Röntgen-zu-infrarot-umwandlungsstrukturen zum beleuchten von röntgendetektoren mit infrarotlicht für verbesserte leistung |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61223689A (ja) * | 1985-03-29 | 1986-10-04 | Shimadzu Corp | 半導体放射線位置検出装置 |
| JP2564979B2 (ja) * | 1990-09-26 | 1996-12-18 | 株式会社島津製作所 | 放射線検出器 |
| US5677539A (en) | 1995-10-13 | 1997-10-14 | Digirad | Semiconductor radiation detector with enhanced charge collection |
| DE19616545B4 (de) | 1996-04-25 | 2006-05-11 | Siemens Ag | Schneller Strahlungsdetektor |
| EP0848885B1 (en) * | 1996-07-08 | 2004-10-06 | Koninklijke Philips Electronics N.V. | X-ray examination apparatus with a semiconductor x-ray detector |
| US6373064B1 (en) * | 1998-10-02 | 2002-04-16 | Sandia Corporation | Semiconductor radiation spectrometer |
| DE10132924A1 (de) * | 2001-07-06 | 2003-01-16 | Philips Corp Intellectual Pty | Flacher dynamischer Strahlungsdetektor |
| JP4211435B2 (ja) | 2002-08-30 | 2009-01-21 | 株式会社島津製作所 | 放射線検出器 |
| US7223981B1 (en) | 2002-12-04 | 2007-05-29 | Aguila Technologies Inc. | Gamma ray detector modules |
| US7379528B2 (en) * | 2003-01-06 | 2008-05-27 | Koninklijke Philips Electronics N.V. | Radiation detector with shielded electronics for computed tomography |
| JP2007527987A (ja) * | 2003-04-24 | 2007-10-04 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Ｘ線検出器素子 |
| JP2005024368A (ja) * | 2003-07-01 | 2005-01-27 | Fuji Photo Film Co Ltd | 放射線画像検出器の残像消去方法および装置 |
| DE102005037898B3 (de) * | 2005-08-10 | 2007-04-12 | Siemens Ag | Festkörperdetektor bzw. Verfahren zur Rücksetzung von Restladungen durch Beleuchtung bei einem Festkörperdetektor |
| US7652258B2 (en) * | 2007-01-08 | 2010-01-26 | Orbotech Medical Solutions Ltd. | Method, apparatus, and system of reducing polarization in radiation detectors |
| EP2088451B1 (en) * | 2008-02-05 | 2016-01-06 | PANalytical B.V. | Imaging detector |
| US20100078558A1 (en) * | 2008-09-26 | 2010-04-01 | Michael Prokesch | Infra-red light stimulated cdZnTe spectroscopic semiconductor x-ray and gamma-ray radiation detector |
| DE102010015422B4 (de) * | 2010-04-19 | 2013-04-18 | Siemens Aktiengesellschaft | Röntgendetektor mit einer direkt konvertierenden Halbleiterschicht und Kalibrierverfahren für einen solchen Röntgendetektor |
| KR101761817B1 (ko) * | 2011-03-04 | 2017-07-26 | 삼성전자주식회사 | 대면적 엑스선 검출기 |
| US8927937B2 (en) * | 2011-05-11 | 2015-01-06 | Koninklijke Philips N.V. | Ionizing radiation detection |
| DE102012213404B3 (de) * | 2012-07-31 | 2014-01-23 | Siemens Aktiengesellschaft | Verfahren zur Temperaturstabilisierung, Röntgenstrahlungsdetektor und CT-System |
-
2013
- 2013-11-08 BR BR112015010277A patent/BR112015010277A2/pt not_active IP Right Cessation
- 2013-11-08 CN CN201380058602.6A patent/CN104781695B/zh active Active
- 2013-11-08 US US14/440,609 patent/US9664558B2/en active Active
- 2013-11-08 EP EP13799686.4A patent/EP2917766B1/en active Active
- 2013-11-08 RU RU2015121968A patent/RU2015121968A/ru not_active Application Discontinuation
- 2013-11-08 JP JP2015541280A patent/JP6310471B2/ja active Active
- 2013-11-08 WO PCT/IB2013/059990 patent/WO2014072939A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN104781695A (zh) | 2015-07-15 |
| US9664558B2 (en) | 2017-05-30 |
| EP2917766A1 (en) | 2015-09-16 |
| EP2917766B1 (en) | 2019-11-06 |
| JP2016504567A (ja) | 2016-02-12 |
| WO2014072939A1 (en) | 2014-05-15 |
| US20150285676A1 (en) | 2015-10-08 |
| BR112015010277A2 (pt) | 2017-07-11 |
| CN104781695B (zh) | 2019-06-28 |
| JP6310471B2 (ja) | 2018-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FA94 | Acknowledgement of application withdrawn (non-payment of fees) |
Effective date: 20180724 |