CN104781695B - 用于探测器晶体的子带红外辐照 - Google Patents
用于探测器晶体的子带红外辐照 Download PDFInfo
- Publication number
- CN104781695B CN104781695B CN201380058602.6A CN201380058602A CN104781695B CN 104781695 B CN104781695 B CN 104781695B CN 201380058602 A CN201380058602 A CN 201380058602A CN 104781695 B CN104781695 B CN 104781695B
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- Prior art keywords
- direct conversion
- semiconductor layer
- infrared
- conversion semiconductor
- infrared radiation
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- 230000005855 radiation Effects 0.000 title claims abstract description 70
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 22
- 238000001514 detection method Methods 0.000 abstract description 8
- 230000010287 polarization Effects 0.000 abstract description 6
- 238000005259 measurement Methods 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910004613 CdTe Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 229910004611 CdZnTe Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000002059 diagnostic imaging Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000002591 computed tomography Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003094 perturbing effect Effects 0.000 description 1
- 230000010399 physical interaction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261724317P | 2012-11-09 | 2012-11-09 | |
| US61/724,317 | 2012-11-09 | ||
| PCT/IB2013/059990 WO2014072939A1 (en) | 2012-11-09 | 2013-11-08 | Sub-band infra-red irradiation for detector crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104781695A CN104781695A (zh) | 2015-07-15 |
| CN104781695B true CN104781695B (zh) | 2019-06-28 |
Family
ID=49713431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380058602.6A Active CN104781695B (zh) | 2012-11-09 | 2013-11-08 | 用于探测器晶体的子带红外辐照 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9664558B2 (enExample) |
| EP (1) | EP2917766B1 (enExample) |
| JP (1) | JP6310471B2 (enExample) |
| CN (1) | CN104781695B (enExample) |
| BR (1) | BR112015010277A2 (enExample) |
| RU (1) | RU2015121968A (enExample) |
| WO (1) | WO2014072939A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105765406B (zh) | 2014-09-26 | 2018-01-05 | 皇家飞利浦有限公司 | 具有加热设备的辐射探测器 |
| US9571765B2 (en) | 2015-06-25 | 2017-02-14 | General Electric Company | Universal four-side buttable digital CMOS imager |
| US9958556B1 (en) | 2015-07-09 | 2018-05-01 | Koninklijke Philips N.V. | Direct conversion radiation detector |
| EP3365706B1 (en) | 2015-10-20 | 2023-12-06 | Koninklijke Philips N.V. | Polarization correction for direct conversion x-ray detectors |
| DE102015220793A1 (de) * | 2015-10-23 | 2017-04-27 | Siemens Healthcare Gmbh | Röntgendetektor und/oder Gammadetektor mit Lichtbias |
| US9588240B1 (en) | 2015-10-27 | 2017-03-07 | General Electric Company | Digital readout architecture for four side buttable digital X-ray detector |
| US10283557B2 (en) | 2015-12-31 | 2019-05-07 | General Electric Company | Radiation detector assembly |
| US10686003B2 (en) | 2015-12-31 | 2020-06-16 | General Electric Company | Radiation detector assembly |
| DE102016210935B4 (de) * | 2016-06-20 | 2020-07-09 | Siemens Healthcare Gmbh | Röntgendetektor mit intransparenter Zwischenschicht |
| EP3516426B1 (en) * | 2016-09-23 | 2021-04-28 | Shenzhen Xpectvision Technology Co., Ltd. | Systems with multiple layers of semiconductor x-ray detectors |
| EP3422051A1 (en) * | 2017-06-28 | 2019-01-02 | Koninklijke Philips N.V. | Direct conversion radiation detection |
| EP3821279B1 (en) * | 2018-07-12 | 2025-08-20 | Shenzhen Xpectvision Technology Co., Ltd. | Method of making a radiation detector |
| EP3605151A1 (en) * | 2018-08-01 | 2020-02-05 | Koninklijke Philips N.V. | Photon counting detector |
| DE102018219061A1 (de) * | 2018-10-25 | 2020-04-30 | Redlen Technologies, Inc. | Röntgen-zu-infrarot-umwandlungsstrukturen zum beleuchten von röntgendetektoren mit infrarotlicht für verbesserte leistung |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6989539B2 (en) * | 2001-07-06 | 2006-01-24 | Koninklije Philips Electronics N.V. | Flat dynamic radiation detector |
| CN1735818A (zh) * | 2003-01-06 | 2006-02-15 | 皇家飞利浦电子股份有限公司 | 用于计算机断层摄影的具有被遮挡的电子装置的辐射探测器 |
| US7196334B2 (en) * | 2003-04-24 | 2007-03-27 | Koninklijke Philips Electronics N.V. | X-ray detector element |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61223689A (ja) * | 1985-03-29 | 1986-10-04 | Shimadzu Corp | 半導体放射線位置検出装置 |
| JP2564979B2 (ja) * | 1990-09-26 | 1996-12-18 | 株式会社島津製作所 | 放射線検出器 |
| US5677539A (en) | 1995-10-13 | 1997-10-14 | Digirad | Semiconductor radiation detector with enhanced charge collection |
| DE19616545B4 (de) | 1996-04-25 | 2006-05-11 | Siemens Ag | Schneller Strahlungsdetektor |
| WO1998001992A2 (en) * | 1996-07-08 | 1998-01-15 | Philips Electronics N.V. | X-ray examination apparatus with a semiconductor x-ray detector |
| US6373064B1 (en) * | 1998-10-02 | 2002-04-16 | Sandia Corporation | Semiconductor radiation spectrometer |
| JP4211435B2 (ja) * | 2002-08-30 | 2009-01-21 | 株式会社島津製作所 | 放射線検出器 |
| US7223981B1 (en) | 2002-12-04 | 2007-05-29 | Aguila Technologies Inc. | Gamma ray detector modules |
| JP2005024368A (ja) * | 2003-07-01 | 2005-01-27 | Fuji Photo Film Co Ltd | 放射線画像検出器の残像消去方法および装置 |
| DE102005037898B3 (de) * | 2005-08-10 | 2007-04-12 | Siemens Ag | Festkörperdetektor bzw. Verfahren zur Rücksetzung von Restladungen durch Beleuchtung bei einem Festkörperdetektor |
| US7652258B2 (en) * | 2007-01-08 | 2010-01-26 | Orbotech Medical Solutions Ltd. | Method, apparatus, and system of reducing polarization in radiation detectors |
| EP2088451B1 (en) * | 2008-02-05 | 2016-01-06 | PANalytical B.V. | Imaging detector |
| US20100078558A1 (en) * | 2008-09-26 | 2010-04-01 | Michael Prokesch | Infra-red light stimulated cdZnTe spectroscopic semiconductor x-ray and gamma-ray radiation detector |
| DE102010015422B4 (de) * | 2010-04-19 | 2013-04-18 | Siemens Aktiengesellschaft | Röntgendetektor mit einer direkt konvertierenden Halbleiterschicht und Kalibrierverfahren für einen solchen Röntgendetektor |
| KR101761817B1 (ko) * | 2011-03-04 | 2017-07-26 | 삼성전자주식회사 | 대면적 엑스선 검출기 |
| US8927937B2 (en) * | 2011-05-11 | 2015-01-06 | Koninklijke Philips N.V. | Ionizing radiation detection |
| DE102012213404B3 (de) * | 2012-07-31 | 2014-01-23 | Siemens Aktiengesellschaft | Verfahren zur Temperaturstabilisierung, Röntgenstrahlungsdetektor und CT-System |
-
2013
- 2013-11-08 BR BR112015010277A patent/BR112015010277A2/pt not_active IP Right Cessation
- 2013-11-08 EP EP13799686.4A patent/EP2917766B1/en active Active
- 2013-11-08 RU RU2015121968A patent/RU2015121968A/ru not_active Application Discontinuation
- 2013-11-08 WO PCT/IB2013/059990 patent/WO2014072939A1/en not_active Ceased
- 2013-11-08 US US14/440,609 patent/US9664558B2/en active Active
- 2013-11-08 JP JP2015541280A patent/JP6310471B2/ja active Active
- 2013-11-08 CN CN201380058602.6A patent/CN104781695B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6989539B2 (en) * | 2001-07-06 | 2006-01-24 | Koninklije Philips Electronics N.V. | Flat dynamic radiation detector |
| CN1735818A (zh) * | 2003-01-06 | 2006-02-15 | 皇家飞利浦电子股份有限公司 | 用于计算机断层摄影的具有被遮挡的电子装置的辐射探测器 |
| US7196334B2 (en) * | 2003-04-24 | 2007-03-27 | Koninklijke Philips Electronics N.V. | X-ray detector element |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104781695A (zh) | 2015-07-15 |
| EP2917766A1 (en) | 2015-09-16 |
| JP2016504567A (ja) | 2016-02-12 |
| US9664558B2 (en) | 2017-05-30 |
| JP6310471B2 (ja) | 2018-04-11 |
| RU2015121968A (ru) | 2017-01-10 |
| EP2917766B1 (en) | 2019-11-06 |
| US20150285676A1 (en) | 2015-10-08 |
| BR112015010277A2 (pt) | 2017-07-11 |
| WO2014072939A1 (en) | 2014-05-15 |
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Legal Events
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |