RU2012142922A - Пленкообразующий раствор для диффузии бора - Google Patents
Пленкообразующий раствор для диффузии бора Download PDFInfo
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- 238000009792 diffusion process Methods 0.000 title claims abstract 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract 8
- 239000010703 silicon Substances 0.000 claims abstract 8
- 239000000758 substrate Substances 0.000 claims abstract 8
- 238000000034 method Methods 0.000 claims abstract 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract 6
- 239000004065 semiconductor Substances 0.000 claims abstract 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000011230 binding agent Substances 0.000 claims abstract 4
- 150000001639 boron compounds Chemical class 0.000 claims abstract 4
- 239000002243 precursor Substances 0.000 claims abstract 4
- 150000003377 silicon compounds Chemical class 0.000 claims abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract 2
- 239000006117 anti-reflective coating Substances 0.000 claims abstract 2
- 229910052796 boron Inorganic materials 0.000 claims abstract 2
- 150000001875 compounds Chemical class 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 239000003960 organic solvent Substances 0.000 claims abstract 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract 2
- 239000000377 silicon dioxide Substances 0.000 claims abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
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- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/18—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
- C23C10/20—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions only one element being diffused
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Abstract
1. Пленкообразующий раствор, применяемый для диффузии бора в кремниевую подложку с целью образования диффузионного слоя р-типа, включающий соединение бора, органическое связующее, соединение кремния, предшественник оксида алюминия и воду и/или органический растворитель.2. Пленкообразующий раствор по п.1, в котором соединение бора присутствует в количестве до 4 мас.% пленкообразующего раствора.3. Пленкообразующий раствор по п.1, в котором органическим связующим является поливиниловый спирт, присутствующий в количестве до 4 мас.% пленкообразующего раствора.4. Пленкообразующий раствор по п.1, в котором соединением кремния является диоксид кремния, присутствующий в количестве до 5 мас.% пленкообразующего раствора.5. Пленкообразующий раствор по п.1, в котором предшественником оксида алюминия является соединение, способное образовывать оксид алюминия при термической обработке и присутствующее в количестве до 8 мас.% пленкообразующего раствора.6. Пленкообразующий раствор по п.1, где вязкость раствора составляет от 80 до 140 мПа·с при 25ºC.7. Способ получения полупроводникового устройства с использованием пленкообразующего раствора по п.1.8. Способ по п.7, в котором полупроводниковым устройством является солнечный элемент.9. Способ по п.8, включающий стадии:обеспечение кремниевой подложки n-типа с текстурой,нанесение пленкообразующего раствора по п.1 на одну поверхность кремниевой подложки,образование диффузионного слоя р-типа,образование диффузионного слоя n-типа на другой поверхности кремниевой подложки,образование антибликового покрытия на каждом диффузионном слое иобразование электродов.10. Полупроводниковое устройст�
Claims (11)
1. Пленкообразующий раствор, применяемый для диффузии бора в кремниевую подложку с целью образования диффузионного слоя р-типа, включающий соединение бора, органическое связующее, соединение кремния, предшественник оксида алюминия и воду и/или органический растворитель.
2. Пленкообразующий раствор по п.1, в котором соединение бора присутствует в количестве до 4 мас.% пленкообразующего раствора.
3. Пленкообразующий раствор по п.1, в котором органическим связующим является поливиниловый спирт, присутствующий в количестве до 4 мас.% пленкообразующего раствора.
4. Пленкообразующий раствор по п.1, в котором соединением кремния является диоксид кремния, присутствующий в количестве до 5 мас.% пленкообразующего раствора.
5. Пленкообразующий раствор по п.1, в котором предшественником оксида алюминия является соединение, способное образовывать оксид алюминия при термической обработке и присутствующее в количестве до 8 мас.% пленкообразующего раствора.
6. Пленкообразующий раствор по п.1, где вязкость раствора составляет от 80 до 140 мПа·с при 25ºC.
7. Способ получения полупроводникового устройства с использованием пленкообразующего раствора по п.1.
8. Способ по п.7, в котором полупроводниковым устройством является солнечный элемент.
9. Способ по п.8, включающий стадии:
обеспечение кремниевой подложки n-типа с текстурой,
нанесение пленкообразующего раствора по п.1 на одну поверхность кремниевой подложки,
образование диффузионного слоя р-типа,
образование диффузионного слоя n-типа на другой поверхности кремниевой подложки,
образование антибликового покрытия на каждом диффузионном слое и
образование электродов.
10. Полупроводниковое устройство, которое получают способом по п.7.
11. Солнечный элемент, который получают способом по п.8.
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JP2011-220051 | 2011-10-04 | ||
JP2011220051 | 2011-10-04 |
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RU2012142922A true RU2012142922A (ru) | 2014-04-20 |
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US (1) | US9181615B2 (ru) |
EP (1) | EP2578721B1 (ru) |
JP (2) | JP2013093563A (ru) |
KR (1) | KR20130037173A (ru) |
CN (1) | CN103059666B (ru) |
AU (1) | AU2012233002B2 (ru) |
MY (1) | MY168836A (ru) |
RU (1) | RU2615134C2 (ru) |
SG (1) | SG189631A1 (ru) |
TW (1) | TW201331314A (ru) |
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US20130045560A1 (en) * | 2011-08-16 | 2013-02-21 | Kenneth P. MacWilliams | Techniques and systems for fabricating anti-reflective and passivation layers on solar cells |
US20150056743A1 (en) * | 2012-03-12 | 2015-02-26 | Mitsubishi Electric Corporation | Manufacturing method of solar cell |
JP6099437B2 (ja) * | 2013-03-07 | 2017-03-22 | 東京応化工業株式会社 | 拡散剤組成物、及び不純物拡散層の形成方法 |
CN103325668A (zh) * | 2013-06-04 | 2013-09-25 | 泰通(泰州)工业有限公司 | 一种晶体硅太阳能电池扩散源配方 |
KR20150035189A (ko) * | 2013-09-27 | 2015-04-06 | 엘지전자 주식회사 | 태양 전지 |
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US20180122640A1 (en) * | 2015-04-15 | 2018-05-03 | Merck Patent Gmbh | Screen-printable boron doping paste with simultaneous inhibition of phosphorus diffusion in co-diffusion processes |
US9525081B1 (en) * | 2015-12-28 | 2016-12-20 | Inventec Solar Energy Corporation | Method of forming a bifacial solar cell structure |
KR102531037B1 (ko) * | 2016-11-03 | 2023-05-09 | 토탈에너지스 마케팅 써비씨즈 | 태양 전지의 표면 처리 |
CN111370304B (zh) * | 2018-12-25 | 2023-03-28 | 天津环鑫科技发展有限公司 | 一种硼铝源及其配置方法 |
CN112599410B (zh) * | 2020-12-16 | 2022-12-13 | 上海玻纳电子科技有限公司 | 提高n型单晶硅片硼扩散的方法 |
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2012
- 2012-09-26 JP JP2012211773A patent/JP2013093563A/ja active Pending
- 2012-09-27 MY MYPI2012004284A patent/MY168836A/en unknown
- 2012-09-29 CN CN201210548232.1A patent/CN103059666B/zh active Active
- 2012-10-01 AU AU2012233002A patent/AU2012233002B2/en not_active Ceased
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US20130081691A1 (en) | 2013-04-04 |
EP2578721A3 (en) | 2014-11-26 |
RU2615134C2 (ru) | 2017-04-04 |
CN103059666A (zh) | 2013-04-24 |
MY168836A (en) | 2018-12-04 |
AU2012233002A1 (en) | 2013-04-18 |
JP2017028303A (ja) | 2017-02-02 |
AU2012233002B2 (en) | 2014-06-19 |
EP2578721A2 (en) | 2013-04-10 |
EP2578721B1 (en) | 2018-12-19 |
KR20130037173A (ko) | 2013-04-15 |
CN103059666B (zh) | 2017-04-12 |
US9181615B2 (en) | 2015-11-10 |
TW201331314A (zh) | 2013-08-01 |
JP6269760B2 (ja) | 2018-01-31 |
JP2013093563A (ja) | 2013-05-16 |
SG189631A1 (en) | 2013-05-31 |
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