RU1321048C - Etching reagent - Google Patents
Etching reagent Download PDFInfo
- Publication number
- RU1321048C RU1321048C SU3928282A RU1321048C RU 1321048 C RU1321048 C RU 1321048C SU 3928282 A SU3928282 A SU 3928282A RU 1321048 C RU1321048 C RU 1321048C
- Authority
- RU
- Russia
- Prior art keywords
- hydrofluoric acid
- quartz
- etching reagent
- dimethylformamide
- etching
- Prior art date
Links
Images
Landscapes
- Surface Treatment Of Glass (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Steroid Compounds (AREA)
Abstract
Description
Изобретение относится к химии и может быть использовано при обработке кварца. The invention relates to chemistry and can be used in the processing of quartz.
Целью изобретения является повышение качества обработки кварца. The aim of the invention is to improve the quality of processing of quartz.
Вводимые компоненты, образуют комплексы с молекулами фтористоводородной кислоты, что способствует поверхностному травлению, уменьшая преимущественное проникновение фтористоводородной кислоты по дефектам вглубь кристалла, т. е. уменьшается неоднородность травления. Спирт выбирают из группы: бензиловый, изоамиловый, циклогексанол, изобутиловый и изопропиловый. The introduced components form complexes with molecules of hydrofluoric acid, which contributes to surface etching, reducing the predominant penetration of hydrofluoric acid through defects deep into the crystal, i.e., the etching inhomogeneity decreases. Alcohol is selected from the group: benzyl, isoamyl, cyclohexanol, isobutyl and isopropyl.
Перемешивание раствора способствует смене травителя и отводу продуктов реакции. Mixing the solution promotes the change of the etchant and the removal of reaction products.
Травитель получают простым смешиванием в обычных условиях. The etchant is obtained by simple mixing under normal conditions.
Полученные смеси используют для травления монокристаллического кварца с различными исходными по шероховатости поверхностями, Ra, мкм 0,02; 0,1; 0,16.The resulting mixtures are used for etching single-crystal quartz with various initial roughness surfaces, R a , μm 0.02; 0.1; 0.16.
После травления пластин кварца на глубину 15 мкм получена шероховатость поверхностей, указанная в таблице. After etching the quartz plates to a depth of 15 μm, the surface roughness indicated in the table is obtained.
Как видно из таблицы, у кварцевых пластин, предварительно прошедших шлифование порошком М-5 (Rа= 0,01 мкм) и М-10 (Rd= 0,16 мкм), после травления величина микронеровностей значительно уменьшается, а у полированных (Rd = 0,02 мкм) - увеличивается незначительно, т. е. травитель обладает полирующими свойствами.As can be seen from the table, in quartz wafers previously polished with M-5 powder (R a = 0.01 μm) and M-10 (R d = 0.16 μm), after etching, the microroughness is significantly reduced, and in polished ( R d = 0.02 μm) - increases slightly, i.e., the etchant has polishing properties.
(56) Авторское свидетельство СССР N 329690, кл. C 09 K 13/00, 1970. (56) Copyright certificate of the USSR N 329690, cl. C 09
Авторское свидетельство СССР N 628161, кл. C 09 K 13/06, 1976. USSR copyright certificate N 628161, cl. C 09
Claims (1)
Плавиковая кислота 40 - 60
Предельный спирт 10 - 40
Диметилформамид 10 - 40HERBAL SOLUTION, comprising hydrofluoric acid, a saturated alcohol and a nitrogen-containing compound, characterized in that, in order to improve the quality of processing of quartz, it contains a saturated alcohol selected from the group: benzyl, isoamyl, cyclohexanol, isobutyl and isopropyl, and as a nitrogen-containing compound dimethylformamide in the following ratio of components, about. %:
Hydrofluoric Acid 40 - 60
Limit alcohol 10 - 40
Dimethylformamide 10 - 40
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU3928282 RU1321048C (en) | 1985-07-16 | 1985-07-16 | Etching reagent |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU3928282 RU1321048C (en) | 1985-07-16 | 1985-07-16 | Etching reagent |
Publications (1)
Publication Number | Publication Date |
---|---|
RU1321048C true RU1321048C (en) | 1994-05-30 |
Family
ID=30440290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU3928282 RU1321048C (en) | 1985-07-16 | 1985-07-16 | Etching reagent |
Country Status (1)
Country | Link |
---|---|
RU (1) | RU1321048C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113061438A (en) * | 2021-03-23 | 2021-07-02 | 泰晶科技股份有限公司 | Organic etching liquid and etching method for AT cut quartz wafer |
-
1985
- 1985-07-16 RU SU3928282 patent/RU1321048C/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113061438A (en) * | 2021-03-23 | 2021-07-02 | 泰晶科技股份有限公司 | Organic etching liquid and etching method for AT cut quartz wafer |
CN113061438B (en) * | 2021-03-23 | 2022-05-17 | 泰晶科技股份有限公司 | Organic etching liquid and etching method for AT-cut quartz wafer |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
RU2099812C1 (en) | Process of wet chemical treatment of disc preforms | |
US7829467B2 (en) | Method for producing a polished semiconductor | |
JPS55153338A (en) | Surface treatment of semiconductor substrate | |
DE3854690D1 (en) | Process for the preparation of aluminoxanes. | |
RU1321048C (en) | Etching reagent | |
KR100197339B1 (en) | Method of removing damaged crystal areas from silicon wafers | |
DK331288D0 (en) | SURFACE | |
GB878594A (en) | Glass polishing method | |
SU722865A1 (en) | Pickling solution | |
SU1560497A1 (en) | Polishing solution for processing glassware in ultrasound field | |
SU628161A1 (en) | Solution for etching glass crystal materials | |
BR8706782A (en) | BATHS FOR POLISHING POLISHING STAINLESS STEEL SURFACES AND PROCESS FOR POLISHING STAINLESS STEEL SURFACES | |
SU1093732A1 (en) | Solution for vibrochemical deburring of steel | |
RU2019579C1 (en) | Solution for pickling coatings of titanium nitride | |
JPH031535A (en) | Semiconductor wafer and processing thereof | |
US3755023A (en) | Technique for etch polishing single rare earth crystal synthetic garnet | |
SU1057856A1 (en) | Reagent for revealing boundaries and sizes of grains in steel | |
SU885169A1 (en) | Pickling solution | |
SU926076A1 (en) | Solution for treating metal surface | |
JPH0684731A (en) | Semiconductor wafer | |
SU629178A1 (en) | Etching solution | |
JPS63274782A (en) | Lapping fluid for stainless steel | |
JPS5785978A (en) | Etching jig | |
RU2457574C1 (en) | Method of polishing semiconductor materials | |
JPS59227127A (en) | Chemical polishing method |