PL2491584T3 - Sposób i urządzenie do obróbki powierzchni podłoża - Google Patents

Sposób i urządzenie do obróbki powierzchni podłoża

Info

Publication number
PL2491584T3
PL2491584T3 PL10739585T PL10739585T PL2491584T3 PL 2491584 T3 PL2491584 T3 PL 2491584T3 PL 10739585 T PL10739585 T PL 10739585T PL 10739585 T PL10739585 T PL 10739585T PL 2491584 T3 PL2491584 T3 PL 2491584T3
Authority
PL
Poland
Prior art keywords
substrate
treating
substrate surface
Prior art date
Application number
PL10739585T
Other languages
English (en)
Inventor
Christian Schmid
Original Assignee
Gebr Schmid GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=43466586&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=PL2491584(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Gebr Schmid GmbH filed Critical Gebr Schmid GmbH
Publication of PL2491584T3 publication Critical patent/PL2491584T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3202—Mechanical details, e.g. rollers or belts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H10P72/0608—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
PL10739585T 2009-10-19 2010-07-28 Sposób i urządzenie do obróbki powierzchni podłoża PL2491584T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009050845A DE102009050845A1 (de) 2009-10-19 2009-10-19 Verfahren und Vorrichtung zur Behandlung einer Substratoberfläche eines Substrats
PCT/EP2010/060985 WO2011047894A1 (de) 2009-10-19 2010-07-28 Verfahren und vorrichtung zur behandlung einer substratoberfläche eines substrats
EP10739585.7A EP2491584B2 (de) 2009-10-19 2010-07-28 Verfahren und vorrichtung zur behandlung einer substratoberfläche eines substrats

Publications (1)

Publication Number Publication Date
PL2491584T3 true PL2491584T3 (pl) 2015-08-31

Family

ID=43466586

Family Applications (1)

Application Number Title Priority Date Filing Date
PL10739585T PL2491584T3 (pl) 2009-10-19 2010-07-28 Sposób i urządzenie do obróbki powierzchni podłoża

Country Status (16)

Country Link
US (1) US8685864B2 (pl)
EP (1) EP2491584B2 (pl)
JP (1) JP5763653B2 (pl)
KR (1) KR101719287B1 (pl)
CN (1) CN102754198B (pl)
AU (1) AU2010310049A1 (pl)
CA (1) CA2778207C (pl)
DE (1) DE102009050845A1 (pl)
ES (1) ES2536480T5 (pl)
IL (1) IL219322A0 (pl)
MX (1) MX2012004536A (pl)
MY (1) MY155130A (pl)
PH (1) PH12012500768A1 (pl)
PL (1) PL2491584T3 (pl)
TW (1) TWI514452B (pl)
WO (1) WO2011047894A1 (pl)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009051847A1 (de) 2009-10-29 2011-05-19 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats
JP5674148B2 (ja) * 2010-06-01 2015-02-25 旭硝子株式会社 ガラス基板の研磨方法及び研磨装置
CN102779724A (zh) * 2011-05-11 2012-11-14 均豪精密工业股份有限公司 单面蚀刻方法及单面蚀刻装置
DE102011081981A1 (de) * 2011-09-01 2013-03-07 Gebr. Schmid Gmbh & Co. Vorrichtung und Anlage zum Bearbeiten von flachen Substraten
DE102012107372B4 (de) 2012-08-10 2017-03-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Alkalischer Ätzprozess und Vorrichtung zur Durchführung des Verfahrens
DE202012103661U1 (de) 2012-09-24 2012-10-26 Rena Gmbh Vorrichtung zur nasschemischen Behandlung und zum Schutz flacher Substrate
DE102013202138A1 (de) * 2013-02-08 2014-08-14 Gebr. Schmid Gmbh Vorrichtung zur Substratnassbehandlung und Verwendung
CN103258728A (zh) * 2013-05-30 2013-08-21 英利能源（中国）有限公司 硅片刻蚀的方法及太阳能电池片的制作方法
DE102013221522A1 (de) 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
DE102013219886A1 (de) 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
CN103985630A (zh) * 2014-06-03 2014-08-13 天津源天晟科技发展有限公司 液体内吸附传输方法
DE102014117276A1 (de) * 2014-11-25 2016-05-25 Rena Gmbh Verfahren und Vorrichtung zur unterseitigen Behandlung eines Substrats
CN104538297A (zh) * 2014-12-31 2015-04-22 常州捷佳创精密机械有限公司 一种对硅片背表面进行抛光处理的方法
DE102015205437A1 (de) * 2015-03-25 2016-09-29 Rct Solutions Gmbh Vorrichtung und Verfahren zur chemischen Behandlung eines Halbleiter-Substrats
DE102015223227A1 (de) 2015-11-24 2017-05-24 Rct Solutions Gmbh Vorrichtung und Verfahren zur chemischen Behandlung eines Halbleiter-Substrats
DE102016009499A1 (de) 2016-08-04 2018-02-08 International Solar Energy Research Center Konstanz E.V. Verfahren und Vorrichtung zum Aufbringen einer Flüssigkeitskappe auf einer Substratoberseite als Schutz der Substratoberseite in einseitigen, horizontalen nasschemischen Behandlungsprozessen
CN106601831B (zh) * 2016-12-30 2018-02-13 常州亿晶光电科技有限公司 一种太阳能电池硅片刻蚀用水膜溶液及其应用
DE102017116419A1 (de) 2017-07-20 2019-01-24 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung von PERT Solarzellen
CN110556321A (zh) * 2019-09-12 2019-12-10 常州时创能源科技有限公司 水膜装置
KR102666521B1 (ko) * 2022-03-23 2024-05-16 주식회사 에스이에이 기판 표면 처리장치
KR102704249B1 (ko) 2022-09-07 2024-09-06 주식회사 에스이에이 기판 표면 처리 방법 및 시스템

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4423326A1 (de) 1994-07-02 1996-01-04 Bosch Gmbh Robert Verfahren und Vorrichtung zum Rückseitenätzen einer Silicium-Waferstruktur
JP3476691B2 (ja) * 1998-11-20 2003-12-10 シャープ株式会社 基板反転装置および基板格納装置
JP3641156B2 (ja) 1999-03-15 2005-04-20 株式会社東芝 新規微生物および海生物の生物処理法
JP3395696B2 (ja) * 1999-03-15 2003-04-14 日本電気株式会社 ウェハ処理装置およびウェハ処理方法
US7029597B2 (en) * 2001-01-23 2006-04-18 Lorin Industries, Inc. Anodized aluminum etching process and related apparatus
JP3912652B2 (ja) * 2001-06-29 2007-05-09 株式会社Ｓｕｍｃｏ 半導体ウェーハの片面エッチング方法およびその装置
JP2004228467A (ja) * 2003-01-27 2004-08-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2004288746A (ja) * 2003-03-19 2004-10-14 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
WO2005006409A1 (de) * 2003-07-09 2005-01-20 Rena Sondermaschinen Gmbh Vorrichtung zur reinigung von wafern nach dem cmp-prozess
US20050034742A1 (en) * 2003-08-11 2005-02-17 Kaijo Corporation Cleaning method and cleaning apparatus
WO2005093788A1 (de) * 2004-03-22 2005-10-06 Rena Sondermaschinen Gmbh Verfahren zur behandlung von substratoberflächen
DE102005062527A1 (de) 2005-12-16 2007-06-21 Gebr. Schmid Gmbh & Co. Vorrichtung und Verfahren zur Oberflächenbehandlung von Substraten
DE102005062528A1 (de) * 2005-12-16 2007-06-21 Gebr. Schmid Gmbh & Co. Vorrichtung und Verfahren zur Oberflächenbehandlung von Substraten
JP2007335791A (ja) * 2006-06-19 2007-12-27 Febacs:Kk 基板処理装置
CN100541730C (zh) * 2007-07-16 2009-09-16 无锡尚德太阳能电力有限公司 半导体基板表面的化学处理方法及其装置
DE102007063202A1 (de) * 2007-12-19 2009-06-25 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung von Silizium-Wafern

Also Published As

Publication number Publication date
IL219322A0 (en) 2012-06-28
PH12012500768A1 (en) 2012-11-26
WO2011047894A1 (de) 2011-04-28
MY155130A (en) 2015-09-15
KR101719287B1 (ko) 2017-03-23
ES2536480T5 (es) 2019-03-06
US8685864B2 (en) 2014-04-01
DE102009050845A1 (de) 2011-04-21
CA2778207A1 (en) 2011-04-28
EP2491584B1 (de) 2015-03-25
CA2778207C (en) 2019-02-26
TW201128693A (en) 2011-08-16
CN102754198B (zh) 2015-09-16
CN102754198A (zh) 2012-10-24
AU2010310049A1 (en) 2012-05-17
EP2491584A1 (de) 2012-08-29
KR20120093301A (ko) 2012-08-22
TWI514452B (zh) 2015-12-21
US20120234793A1 (en) 2012-09-20
JP2013508957A (ja) 2013-03-07
EP2491584B2 (de) 2018-10-03
ES2536480T3 (es) 2015-05-25
MX2012004536A (es) 2012-10-15
JP5763653B2 (ja) 2015-08-12

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