PL2092571T3 - Przednia elektroda z warstwą cienkiej metalowej powłoki i warstwą buforową o dużej pracy wyjścia do wykorzystania w urządzeniu fotowoltaicznym oraz sposób ich tworzenia - Google Patents

Przednia elektroda z warstwą cienkiej metalowej powłoki i warstwą buforową o dużej pracy wyjścia do wykorzystania w urządzeniu fotowoltaicznym oraz sposób ich tworzenia

Info

Publication number
PL2092571T3
PL2092571T3 PL07852888T PL07852888T PL2092571T3 PL 2092571 T3 PL2092571 T3 PL 2092571T3 PL 07852888 T PL07852888 T PL 07852888T PL 07852888 T PL07852888 T PL 07852888T PL 2092571 T3 PL2092571 T3 PL 2092571T3
Authority
PL
Poland
Prior art keywords
metal film
thin metal
photovoltaic device
front electrode
making same
Prior art date
Application number
PL07852888T
Other languages
English (en)
Inventor
Alexey Krasnov
Original Assignee
Guardian Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guardian Industries filed Critical Guardian Industries
Publication of PL2092571T3 publication Critical patent/PL2092571T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
PL07852888T 2006-11-02 2007-10-23 Przednia elektroda z warstwą cienkiej metalowej powłoki i warstwą buforową o dużej pracy wyjścia do wykorzystania w urządzeniu fotowoltaicznym oraz sposób ich tworzenia PL2092571T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/591,676 US20080105299A1 (en) 2006-11-02 2006-11-02 Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
PCT/US2007/022427 WO2008057202A1 (en) 2006-11-02 2007-10-23 Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
EP07852888A EP2092571B1 (en) 2006-11-02 2007-10-23 Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same

Publications (1)

Publication Number Publication Date
PL2092571T3 true PL2092571T3 (pl) 2013-02-28

Family

ID=39108136

Family Applications (1)

Application Number Title Priority Date Filing Date
PL07852888T PL2092571T3 (pl) 2006-11-02 2007-10-23 Przednia elektroda z warstwą cienkiej metalowej powłoki i warstwą buforową o dużej pracy wyjścia do wykorzystania w urządzeniu fotowoltaicznym oraz sposób ich tworzenia

Country Status (8)

Country Link
US (1) US20080105299A1 (pl)
EP (1) EP2092571B1 (pl)
BR (1) BRPI0718008A2 (pl)
CA (1) CA2668103A1 (pl)
ES (1) ES2396570T3 (pl)
PL (1) PL2092571T3 (pl)
RU (1) RU2435251C2 (pl)
WO (1) WO2008057202A1 (pl)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080302414A1 (en) * 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
US8012317B2 (en) * 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US7964788B2 (en) * 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
US20080308145A1 (en) * 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
US20080308146A1 (en) * 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
CN101419323A (zh) * 2007-10-22 2009-04-29 鸿富锦精密工业（深圳）有限公司 微型相机模组及其制作方法
US7888594B2 (en) * 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US20090194155A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US20090194157A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US8981211B2 (en) * 2008-03-18 2015-03-17 Zetta Research and Development LLC—AQT Series Interlayer design for epitaxial growth of semiconductor layers
US8501522B2 (en) * 2008-05-30 2013-08-06 Gtat Corporation Intermetal stack for use in a photovoltaic cell
US7915522B2 (en) 2008-05-30 2011-03-29 Twin Creeks Technologies, Inc. Asymmetric surface texturing for use in a photovoltaic cell and method of making
KR100993513B1 (ko) 2008-10-06 2010-11-10 엘지전자 주식회사 태양전지
US8022291B2 (en) * 2008-10-15 2011-09-20 Guardian Industries Corp. Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
DE102008055036A1 (de) 2008-12-19 2010-07-08 Q-Cells Se Solarzelle
KR20100130008A (ko) * 2009-06-02 2010-12-10 삼성전자주식회사 태양 전지 구조체
CN102473748B (zh) * 2009-07-01 2014-08-20 三菱电机株式会社 薄膜太阳能电池及其制造方法
DE102009034822A1 (de) * 2009-07-27 2011-02-03 Osram Opto Semiconductors Gmbh Elektronisches Bauelement sowie elektischer Kontakt
US20110180130A1 (en) * 2010-01-22 2011-07-28 Guardian Industries Corp. Highly-conductive and textured front transparent electrode for a-si thin-film solar cells, and/or method of making the same
TW201218397A (en) * 2010-07-09 2012-05-01 Applied Materials Inc High performance multi-layer back contact stack for silicon solar cells
NL2005261C2 (en) * 2010-08-24 2012-02-27 Solland Solar Cells B V Back contacted photovoltaic cell with an improved shunt resistance.
US20120055534A1 (en) * 2010-09-08 2012-03-08 Applied Materials, Inc. Photovoltaic Devices with High Work-Function TCO Buffer Layers and Methods of Manufacture
WO2012125816A1 (en) * 2011-03-15 2012-09-20 Xunlight 26 Solar, Llc Intrinsically semitransparent solar cell and method of making same
US20120255600A1 (en) * 2011-04-06 2012-10-11 International Business Machines Corporation Method of bonding and formation of back surface field (bsf) for multi-junction iii-v solar cells
CN103094374B (zh) * 2011-10-27 2016-03-09 清华大学 太阳能电池
CN102394258B (zh) * 2011-11-18 2013-05-01 牡丹江旭阳太阳能科技有限公司 薄膜太阳电池高导电性前电极的制备方法
US8679988B2 (en) * 2011-11-22 2014-03-25 Intermolecular, Inc. Plasma processing of metal oxide films for resistive memory device applications
WO2013106439A1 (en) * 2012-01-13 2013-07-18 Applied Materials, Inc. High work-function buffer layers for silicon-based photovoltaic devices
US20130224899A1 (en) 2012-02-28 2013-08-29 International Business Machines Corporation Enhancing efficiency in solar cells by adjusting deposition power
US9214577B2 (en) 2012-02-28 2015-12-15 International Business Machines Corporation Reduced light degradation due to low power deposition of buffer layer
US9379259B2 (en) * 2012-11-05 2016-06-28 International Business Machines Corporation Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
US20140217408A1 (en) * 2013-02-06 2014-08-07 International Business Machines Corporaton Buffer layer for high performing and low light degraded solar cells
US9385000B2 (en) * 2014-01-24 2016-07-05 United Microelectronics Corp. Method of performing etching process
EP3850673A4 (en) * 2018-09-14 2022-06-08 Ubiquitous Energy, Inc. METHOD AND SYSTEM FOR MULTILAYERY TRANSPARENT ELECTRODE FOR TRANSPARENT PHOTOVOLTAIC DEVICES

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL127148C (pl) * 1963-12-23
US4155781A (en) * 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
US4213798A (en) * 1979-04-27 1980-07-22 Rca Corporation Tellurium schottky barrier contact for amorphous silicon solar cells
US4378460A (en) * 1981-08-31 1983-03-29 Rca Corporation Metal electrode for amorphous silicon solar cells
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
JPS59175166A (ja) * 1983-03-23 1984-10-03 Agency Of Ind Science & Technol アモルファス光電変換素子
US4598396A (en) * 1984-04-03 1986-07-01 Itt Corporation Duplex transmission mechanism for digital telephones
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
AU616736B2 (en) * 1988-03-03 1991-11-07 Asahi Glass Company Limited Amorphous oxide film and article having such film thereon
EP0364780B1 (en) * 1988-09-30 1997-03-12 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Solar cell with a transparent electrode
US4940495A (en) * 1988-12-07 1990-07-10 Minnesota Mining And Manufacturing Company Photovoltaic device having light transmitting electrically conductive stacked films
DE4024308C2 (de) * 1989-07-31 1993-12-02 Central Glass Co Ltd Wärmeisolierglas mit dielektrischem Vielschichtenüberzug
WO1992007386A1 (en) * 1990-10-15 1992-04-30 United Solar Systems Corporation Monolithic solar cell array and method for its manufacture
DE4126738A1 (de) * 1990-12-11 1992-06-17 Claussen Nils Zr0(pfeil abwaerts)2(pfeil abwaerts)-haltiger keramikformkoerper
US5171411A (en) * 1991-05-21 1992-12-15 The Boc Group, Inc. Rotating cylindrical magnetron structure with self supporting zinc alloy target
US5256858A (en) * 1991-08-29 1993-10-26 Tomb Richard H Modular insulation electrically heated building panel with evacuated chambers
CA2081935C (en) * 1991-11-22 2004-05-25 Karl Eicken Anilide derivatives and their use for combating botrytis
JP3530595B2 (ja) * 1993-09-30 2004-05-24 キヤノン株式会社 太陽電池モジュール
JP3029178B2 (ja) * 1994-04-27 2000-04-04 キヤノン株式会社 薄膜半導体太陽電池の製造方法
GB9500330D0 (en) * 1995-01-09 1995-03-01 Pilkington Plc Coatings on glass
FR2730990B1 (fr) * 1995-02-23 1997-04-04 Saint Gobain Vitrage Substrat transparent a revetement anti-reflets
EP0733931B1 (en) * 1995-03-22 2003-08-27 Toppan Printing Co., Ltd. Multilayered conductive film, and transparent electrode substrate and liquid crystal device using the same
JP3431776B2 (ja) * 1995-11-13 2003-07-28 シャープ株式会社 太陽電池用基板の製造方法および太陽電池用基板加工装置
US6433913B1 (en) * 1996-03-15 2002-08-13 Gentex Corporation Electro-optic device incorporating a discrete photovoltaic device and method and apparatus for making same
GB9619134D0 (en) * 1996-09-13 1996-10-23 Pilkington Plc Improvements in or related to coated glass
US6406639B2 (en) * 1996-11-26 2002-06-18 Nippon Sheet Glass Co., Ltd. Method of partially forming oxide layer on glass substrate
US6123824A (en) * 1996-12-13 2000-09-26 Canon Kabushiki Kaisha Process for producing photo-electricity generating device
JP3805889B2 (ja) * 1997-06-20 2006-08-09 株式会社カネカ 太陽電池モジュールおよびその製造方法
JPH1146006A (ja) * 1997-07-25 1999-02-16 Canon Inc 光起電力素子およびその製造方法
US6222117B1 (en) * 1998-01-05 2001-04-24 Canon Kabushiki Kaisha Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
US6344608B2 (en) * 1998-06-30 2002-02-05 Canon Kabushiki Kaisha Photovoltaic element
FR2781062B1 (fr) * 1998-07-09 2002-07-12 Saint Gobain Vitrage Vitrage a proprietes optiques et/ou energetiques electrocommandables
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
FR2791147B1 (fr) * 1999-03-19 2002-08-30 Saint Gobain Vitrage Dispositif electrochimique du type dispositif electrocommandable a proprietes optiques et/ou energetiques variables
TW463528B (en) * 1999-04-05 2001-11-11 Idemitsu Kosan Co Organic electroluminescence element and their preparation
NO314525B1 (no) * 1999-04-22 2003-03-31 Thin Film Electronics Asa Fremgangsmåte ved fremstillingen av organiske halvledende innretninger i tynnfilm
US6187824B1 (en) * 1999-08-25 2001-02-13 Nyacol Nano Technologies, Inc. Zinc oxide sol and method of making
DE19958878B4 (de) * 1999-12-07 2012-01-19 Saint-Gobain Glass Deutschland Gmbh Dünnschicht-Solarzelle
JP4434411B2 (ja) * 2000-02-16 2010-03-17 出光興産株式会社 アクティブ駆動型有機ｅｌ発光装置およびその製造方法
RU2170994C1 (ru) * 2000-04-05 2001-07-20 Вологодский государственный технический университет Способ изготовления твердотельного фотогальванического элемента для преобразования энергии света в электрическую энергию
US7267879B2 (en) * 2001-02-28 2007-09-11 Guardian Industries Corp. Coated article with silicon oxynitride adjacent glass
CN1389085A (zh) * 2000-08-23 2003-01-01 出光兴产株式会社 有机el显示装置
US6784361B2 (en) * 2000-09-20 2004-08-31 Bp Corporation North America Inc. Amorphous silicon photovoltaic devices
JP2002260448A (ja) * 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
JP2002170431A (ja) * 2000-11-29 2002-06-14 Idemitsu Kosan Co Ltd 電極基板およびその製造方法
KR100768176B1 (ko) * 2001-02-07 2007-10-17 삼성에스디아이 주식회사 광학적 전기적 특성을 지닌 기능성 박막
US7132666B2 (en) * 2001-02-07 2006-11-07 Tomoji Takamasa Radiation detector and radiation detecting element
US6774300B2 (en) * 2001-04-27 2004-08-10 Adrena, Inc. Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure
WO2002091483A2 (en) * 2001-05-08 2002-11-14 Bp Corporation North America Inc. Improved photovoltaic device
US6589657B2 (en) * 2001-08-31 2003-07-08 Von Ardenne Anlagentechnik Gmbh Anti-reflection coatings and associated methods
JP4162447B2 (ja) * 2001-09-28 2008-10-08 三洋電機株式会社 光起電力素子及び光起電力装置
US6936347B2 (en) * 2001-10-17 2005-08-30 Guardian Industries Corp. Coated article with high visible transmission and low emissivity
FR2832706B1 (fr) * 2001-11-28 2004-07-23 Saint Gobain Substrat transparent muni d'une electrode
US6830817B2 (en) * 2001-12-21 2004-12-14 Guardian Industries Corp. Low-e coating with high visible transmission
US7037869B2 (en) * 2002-01-28 2006-05-02 Guardian Industries Corp. Clear glass composition
US7169722B2 (en) * 2002-01-28 2007-01-30 Guardian Industries Corp. Clear glass composition with high visible transmittance
US6919133B2 (en) * 2002-03-01 2005-07-19 Cardinal Cg Company Thin film coating having transparent base layer
TWI254080B (en) * 2002-03-27 2006-05-01 Sumitomo Metal Mining Co Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
FR2844136B1 (fr) * 2002-09-03 2006-07-28 Corning Inc Materiau utilisable dans la fabrication de dispositifs d'affichage lumineux en particulier de diodes electroluminescentes organiques
FR2844364B1 (fr) * 2002-09-11 2004-12-17 Saint Gobain Substrat diffusant
US7141863B1 (en) * 2002-11-27 2006-11-28 University Of Toledo Method of making diode structures
TW583466B (en) * 2002-12-09 2004-04-11 Hannstar Display Corp Structure of liquid crystal display
TWI232066B (en) * 2002-12-25 2005-05-01 Au Optronics Corp Manufacturing method of organic light emitting diode for reducing reflection of external light
JP4241446B2 (ja) * 2003-03-26 2009-03-18 キヤノン株式会社 積層型光起電力素子
EP1624494A4 (en) * 2003-05-13 2007-10-10 Asahi Glass Co Ltd TRANSPARENT CONDUCTIVE SUBSTRATE FOR A SOLAR BATTERY AND METHOD FOR THE PRODUCTION THEREOF
US7087309B2 (en) * 2003-08-22 2006-08-08 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Coated article with tin oxide, silicon nitride and/or zinc oxide under IR reflecting layer and corresponding method
JP4761706B2 (ja) * 2003-12-25 2011-08-31 京セラ株式会社 光電変換装置の製造方法
US8524051B2 (en) * 2004-05-18 2013-09-03 Centre Luxembourg de Recherches pour le Verre et al Ceramique S. A. (C.R.V.C.) Coated article with oxidation graded layer proximate IR reflecting layer(s) and corresponding method
US20050257824A1 (en) * 2004-05-24 2005-11-24 Maltby Michael G Photovoltaic cell including capping layer
US7700869B2 (en) * 2005-02-03 2010-04-20 Guardian Industries Corp. Solar cell low iron patterned glass and method of making same
US7531239B2 (en) * 2005-04-06 2009-05-12 Eclipse Energy Systems Inc Transparent electrode
US7700870B2 (en) * 2005-05-05 2010-04-20 Guardian Industries Corp. Solar cell using low iron high transmission glass with antimony and corresponding method
US7743630B2 (en) * 2005-05-05 2010-06-29 Guardian Industries Corp. Method of making float glass with transparent conductive oxide (TCO) film integrally formed on tin bath side of glass and corresponding product
US7597964B2 (en) * 2005-08-02 2009-10-06 Guardian Industries Corp. Thermally tempered coated article with transparent conductive oxide (TCO) coating
JP2007067194A (ja) * 2005-08-31 2007-03-15 Fujifilm Corp 有機光電変換素子、および積層型光電変換素子
US20070184573A1 (en) * 2006-02-08 2007-08-09 Guardian Industries Corp., Method of making a thermally treated coated article with transparent conductive oxide (TCO) coating for use in a semiconductor device
US20070193624A1 (en) * 2006-02-23 2007-08-23 Guardian Industries Corp. Indium zinc oxide based front contact for photovoltaic device and method of making same
US7557053B2 (en) * 2006-03-13 2009-07-07 Guardian Industries Corp. Low iron high transmission float glass for solar cell applications and method of making same
US8648252B2 (en) * 2006-03-13 2014-02-11 Guardian Industries Corp. Solar cell using low iron high transmission glass and corresponding method
US20080047602A1 (en) * 2006-08-22 2008-02-28 Guardian Industries Corp. Front contact with high-function TCO for use in photovoltaic device and method of making same
US20080047603A1 (en) * 2006-08-24 2008-02-28 Guardian Industries Corp. Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same
US20080105298A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8012317B2 (en) * 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8334452B2 (en) * 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
US20080223436A1 (en) * 2007-03-15 2008-09-18 Guardian Industries Corp. Back reflector for use in photovoltaic device
US7888594B2 (en) * 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US20090194157A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
US20090194155A1 (en) * 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same

Also Published As

Publication number Publication date
RU2009120692A (ru) 2010-12-10
US20080105299A1 (en) 2008-05-08
BRPI0718008A2 (pt) 2013-11-26
EP2092571B1 (en) 2012-09-26
WO2008057202A1 (en) 2008-05-15
CA2668103A1 (en) 2008-05-15
RU2435251C2 (ru) 2011-11-27
EP2092571A1 (en) 2009-08-26
ES2396570T3 (es) 2013-02-22

Similar Documents

Publication Publication Date Title
TWI340396B (en) Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
TWI349961B (en) Surface protection film peeling method and surface protection film peeling device
SG10201402245VA (en) Transparent conductive oxide coating for thin film photovoltaic applications and methods of making the same
TWI370266B (en) Anti-glare film, method of manufacturing the same, and display device
EP2001797A4 (en) SILICON MANUFACTURING METHOD FOR SOLAR CELLS AND OTHER APPLICATIONS
TWI367130B (en) Film coating apparatus and film coating method
ZA200905467B (en) Method for activation of helper T cell and composition for use in the method
EP1998524A4 (en) METHOD AND DEVICE FOR POWER SAVING IN DIGITAL SUBSCRIBER LINES
PT2066399T (pt) Dispositivos de eletroporação e métodos de usar os mesmos para eletroporação de células em mamíferos
EP2109905A4 (en) ELECTRODE FOR A CELL OF A POWER STORAGE DEVICE AND METHOD OF MANUFACTURING THEREOF
TWI347614B (en) Silver electroconductive film and manufacturing method of the same
PT1876129E (pt) Processo e dispositivo para a redução do consumo de energia de uma instalação de elevadores
EP2221274A4 (en) CARBON THIN FILM AND METHOD FOR MANUFACTURING THE SAME
EP1978127A4 (en) PROJECTION DEVICE AND METHOD FOR FORMING FILM
PL2104718T3 (pl) Silikonowa kompozycja klejąca oraz sposób klejenia z użyciem takiej kompozycji
GB2442084B (en) Flow-through cell and method of use
ZA200901397B (en) Identifying and reducing causes of defects in thin cast strip
TWI339914B (en) Active layer utilized in solar cell and fabrication method thereof
EP2314728A4 (en) Al alloy member, electronic device manufacturing device, and manufacturing method for al alloy member with anodic oxide film
PL2029076T3 (pl) Część garderoby do zastosowania ze strukturą chłonną i sposób jej wytwarzania
IL192564A0 (en) Composition and method of use thereof
EP1886801A4 (en) THIN FILM FORMING AND TRANSLUCENT LINE FILM
PL2069048T3 (pl) Sposób formowania środka i jego zastosowanie w odsiarczaniu
TWI369693B (en) Thin film resistor structure and fabrication method thereof
TWI373144B (en) Thin film solar cell and manufacturing method thereof