PL117841B1 - Semiconductor element and method of fabrication thereof rovodnikovogo ehlementa - Google Patents

Semiconductor element and method of fabrication thereof rovodnikovogo ehlementa Download PDF

Info

Publication number
PL117841B1
PL117841B1 PL1978204821A PL20482178A PL117841B1 PL 117841 B1 PL117841 B1 PL 117841B1 PL 1978204821 A PL1978204821 A PL 1978204821A PL 20482178 A PL20482178 A PL 20482178A PL 117841 B1 PL117841 B1 PL 117841B1
Authority
PL
Poland
Prior art keywords
layer
passivating
semiconductor element
semiconductor
polycrystalline silicon
Prior art date
Application number
PL1978204821A
Other languages
English (en)
Polish (pl)
Other versions
PL204821A1 (pl
Inventor
Walter A Hicinbothen
Ming L Tarng
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of PL204821A1 publication Critical patent/PL204821A1/xx
Publication of PL117841B1 publication Critical patent/PL117841B1/pl

Links

Classifications

    • H10P14/662
    • H10P14/69215
    • H10P14/69433
    • H10P95/00
    • H10W74/01
    • H10W74/137
    • H10P14/69391

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
PL1978204821A 1977-02-24 1978-02-22 Semiconductor element and method of fabrication thereof rovodnikovogo ehlementa PL117841B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77174977A 1977-02-24 1977-02-24

Publications (2)

Publication Number Publication Date
PL204821A1 PL204821A1 (pl) 1978-11-06
PL117841B1 true PL117841B1 (en) 1981-08-31

Family

ID=25092854

Family Applications (1)

Application Number Title Priority Date Filing Date
PL1978204821A PL117841B1 (en) 1977-02-24 1978-02-22 Semiconductor element and method of fabrication thereof rovodnikovogo ehlementa

Country Status (10)

Country Link
JP (1) JPS53105979A (index.php)
BE (1) BE864271A (index.php)
DE (1) DE2806492A1 (index.php)
FR (1) FR2382095B1 (index.php)
GB (1) GB1552760A (index.php)
IN (1) IN147578B (index.php)
IT (1) IT1092729B (index.php)
PL (1) PL117841B1 (index.php)
SE (1) SE7801092L (index.php)
YU (1) YU42276B (index.php)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3021175A1 (de) * 1980-06-04 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum passivieren von siliciumbauelementen
FR2487576A1 (fr) * 1980-07-24 1982-01-29 Thomson Csf Procede de fabrication de diodes mesa glassivees
US4344985A (en) 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US4420765A (en) 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
JPS60208886A (ja) * 1984-03-31 1985-10-21 株式会社東芝 電子部品の製造方法
US4826733A (en) * 1986-12-03 1989-05-02 Dow Corning Corporation Sin-containing coatings for electronic devices
FR2625839B1 (fr) * 1988-01-13 1991-04-26 Sgs Thomson Microelectronics Procede de passivation d'un circuit integre

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1250099A (index.php) * 1969-04-14 1971-10-20
JPS532552B2 (index.php) * 1974-03-30 1978-01-28
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices
JPS6022497B2 (ja) * 1974-10-26 1985-06-03 ソニー株式会社 半導体装置
NL7500492A (nl) * 1975-01-16 1976-07-20 Philips Nv Werkwijze voor het vervaardigen van halfgelei- derinrichtingen, waarbij een glazen bedekking wordt aangebracht, en halfgeleiderinrichtingen, vervaardigd volgens deze werkwijze.
JPS6041458B2 (ja) * 1975-04-21 1985-09-17 ソニー株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
BE864271A (fr) 1978-06-16
YU19278A (en) 1982-06-30
FR2382095A1 (fr) 1978-09-22
IT7819175A0 (it) 1978-01-11
GB1552760A (en) 1979-09-19
FR2382095B1 (fr) 1985-10-18
DE2806492A1 (de) 1978-08-31
JPS5626981B2 (index.php) 1981-06-22
JPS53105979A (en) 1978-09-14
SE7801092L (sv) 1978-08-25
IN147578B (index.php) 1980-04-19
IT1092729B (it) 1985-07-12
PL204821A1 (pl) 1978-11-06
YU42276B (en) 1988-08-31

Similar Documents

Publication Publication Date Title
US5508881A (en) Capacitors and interconnect lines for use with integrated circuits
US5698451A (en) Method of fabricating contacts for solar cells
Fuller et al. Diffusion, solubility, and electrical behavior of Li in GaAs single crystals
US3300339A (en) Method of covering the surfaces of objects with protective glass jackets and the objects produced thereby
JP4242648B2 (ja) 金属イオン拡散バリア層
PL117841B1 (en) Semiconductor element and method of fabrication thereof rovodnikovogo ehlementa
Demourgues et al. Transport and magnetic properties of La2NiO4+ δ (0≤ δ≤ 0.25)
US4746377A (en) Semiconductor device with thermally oxidized insulating and arsenic diffusion layers
DeKeersmaecker et al. Hole trapping in the bulk of SiO2 layers at room temperature
JPS6066866A (ja) 炭化珪素mos構造の製造方法
DE1242760C2 (de) Verfahren zum herstellen einer oberflaechen-schutzschicht fuer halbleiterbauelemente
PL116754B1 (en) Semiconductor element and a method of manufacturing thesame
US3717798A (en) Overlay for ohmic contact electrodes
US2894184A (en) Electrical characteristics of diodes
Duffy et al. Dielectric and interface properties of pyrolytic aluminum oxide films on silicon substrates
Bagnoli et al. Electrical characteristics of silicon nitride on silicon and InGaAs as a function of the insulator stoichiometry
Verderber et al. SiO 2/Si 3 N 4 passivation of high-power rectifiers
US6046490A (en) Semiconductor device having a capacitor dielectric element and wiring layers
Magee et al. Investigation of solid–solid reactions of Au films on silicon
Kim et al. The effects of substrate and annealing ambient on the electrical properties of Ta2O5 thin films prepared by plasma enhanced chemical vapor deposition
US2821490A (en) Titanate rectifiers
Chang et al. Double critical temperature characteristics of semiconducting (Ba0. 7Pb0. 3) TiO3 materials prepared by microwave sintering
US3698945A (en) Method of coating pn junction of semiconductor device with mixture of sio2 and tio2
Huang et al. Kinetics of Cu 3 Ge formation and reaction with Al
US3629666A (en) Semiconductor device and method of manufacturing same