NO953464L - Fremgangsmåte for fremstilling av et substramateriale for solceller - Google Patents
Fremgangsmåte for fremstilling av et substramateriale for solcellerInfo
- Publication number
- NO953464L NO953464L NO953464A NO953464A NO953464L NO 953464 L NO953464 L NO 953464L NO 953464 A NO953464 A NO 953464A NO 953464 A NO953464 A NO 953464A NO 953464 L NO953464 L NO 953464L
- Authority
- NO
- Norway
- Prior art keywords
- silicon
- solar cells
- rod
- preparing
- solar cell
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6210982A JPH0873297A (ja) | 1994-09-05 | 1994-09-05 | 太陽電池用基板材料の製法とこれを用いた太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
NO953464D0 NO953464D0 (no) | 1995-09-04 |
NO953464L true NO953464L (no) | 1996-03-06 |
Family
ID=16598355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO953464A NO953464L (no) | 1994-09-05 | 1995-09-04 | Fremgangsmåte for fremstilling av et substramateriale for solceller |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0704559A1 (ja) |
JP (1) | JPH0873297A (ja) |
NO (1) | NO953464L (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4607304B2 (ja) * | 2000-09-26 | 2011-01-05 | 信越半導体株式会社 | 太陽電池用シリコン単結晶及び太陽電池用シリコン単結晶ウエーハ並びにその製造方法 |
JP2009023851A (ja) * | 2007-07-17 | 2009-02-05 | Sumco Corp | シリコン単結晶製造用原料の製造方法およびシリコン単結晶の製造方法 |
EP2212249B1 (en) | 2007-09-13 | 2015-01-14 | Silicio Ferrosolar, S.L.U. | Process for the production of medium and high purity silicon from metallurgical grade silicon |
DE102008054519A1 (de) * | 2008-12-11 | 2010-06-17 | Wacker Chemie Ag | Polykristallines germaniumlegiertes Silicium und ein Verfahren zu seiner Herstellung |
JP5406126B2 (ja) | 2010-06-09 | 2014-02-05 | 株式会社岡本工作機械製作所 | インゴットブロックの複合面取り加工装置および加工方法 |
RU2635834C2 (ru) | 2012-08-09 | 2017-11-16 | Син-Эцу Кемикал Ко., Лтд. | Способ изготовления солнечного элемента и изготовленный с помощью этого способа солнечный элемент |
JP5935021B2 (ja) * | 2015-02-20 | 2016-06-15 | 蒲池 豊 | シリコン結晶の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3048114A1 (de) * | 1980-12-19 | 1982-07-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum tiegelfreien zonenschmelzen |
DE3220338A1 (de) * | 1982-05-28 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe |
DE3220343A1 (de) * | 1982-05-28 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen polykristalliner siliciumstaebe |
DE3220284A1 (de) * | 1982-05-28 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe |
DE3220340A1 (de) * | 1982-05-28 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe |
DE3611950A1 (de) * | 1986-04-09 | 1987-10-22 | Siemens Ag | Verfahren zum abtrennen von festen raktionsprodukten, wie kohlenstoff, aus carbothermisch erzeugtem silizium |
US4921026A (en) * | 1988-06-01 | 1990-05-01 | Union Carbide Chemicals And Plastics Company Inc. | Polycrystalline silicon capable of yielding long lifetime single crystalline silicon |
EP0450494B1 (en) * | 1990-03-30 | 1996-06-19 | Sumitomo Sitix Corporation | Manufacturing method for single-crystal silicon |
US5080726A (en) * | 1990-05-31 | 1992-01-14 | The United States Of America As Represented By The Administrator Of The National Aeornautics And Space Administration | Directional solidification processing of alloys using an applied electric field |
-
1994
- 1994-09-05 JP JP6210982A patent/JPH0873297A/ja active Pending
-
1995
- 1995-08-11 EP EP95401887A patent/EP0704559A1/en not_active Withdrawn
- 1995-09-04 NO NO953464A patent/NO953464L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NO953464D0 (no) | 1995-09-04 |
JPH0873297A (ja) | 1996-03-19 |
EP0704559A1 (en) | 1996-04-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100510200C (zh) | 直拉法拉晶设备 | |
EP0911885A3 (en) | Improved columnar-grained polycrystalline solar cell and process of manufacture | |
CN101174596A (zh) | 单晶硅太阳能电池的制造方法及单晶硅太阳能电池 | |
JP2009541195A (ja) | 半導体グレードの多結晶シリコンのインゴットの方向性凝固用の方法及び坩堝 | |
JP2009541193A (ja) | 半導体級シリコンを生産するための装置および方法 | |
NO953464L (no) | Fremgangsmåte for fremstilling av et substramateriale for solceller | |
EP1154049A4 (en) | PROCESS FOR THE PRODUCTION OF MONOCRYSTAL SILICON CARBIDE | |
CN105200526B (zh) | 一种氧化镓晶片去应力退火方法 | |
ATE222613T1 (de) | Einkristallpulver- und monokornmembranherstellung | |
CN101942701A (zh) | 一种太阳能级硅晶体的热处理方法 | |
Ciszek | Photovoltaic materials and crystal growth research and development in the Gigawatt era | |
TW200834741A (en) | Directional crystallization of silicon sheets using rapid thermal processing | |
CN107268071A (zh) | 一种太阳能电池板用单晶硅制备工艺 | |
Lan et al. | Recent progress of crystal growth technology for multi-crystalline silicon solar ingot | |
JPH0573323B2 (ja) | ||
JP2008143754A (ja) | 球状シリコン結晶及びその製造方法 | |
Einhaus et al. | Purifying UMG Silicon at the French PHOTOSIL project | |
CN109881249A (zh) | 用于多晶硅铸锭的石英坩埚、铸锭炉及多晶硅铸锭方法 | |
CN100376039C (zh) | 高效晶体硅电池规模化制造方法 | |
CN102618935A (zh) | 含易挥发组分多元化合物红外非线性单晶的退火方法 | |
JP3157201B2 (ja) | 半導体装置の製造方法 | |
MY115587A (en) | Process for the removal of copper from polished baron doped silicon wafers | |
JP2002104819A (ja) | 結晶質シリコン粒子およびその製造方法および結晶質シリコン粒子を用いた光電変換装置 | |
CN106350865B (zh) | 高纯度多晶硅片的制备方法 | |
JPH11238689A (ja) | エピタキシャル半導体ウエーハ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FC2A | Withdrawal, rejection or dismissal of laid open patent application |