NO931029L - Fremgangsmaate og anordning for aa tilveiebringe variabel, rommessig frekvensstyring i plasmaassistert, kjemisk etsing - Google Patents

Fremgangsmaate og anordning for aa tilveiebringe variabel, rommessig frekvensstyring i plasmaassistert, kjemisk etsing

Info

Publication number
NO931029L
NO931029L NO93931029A NO931029A NO931029L NO 931029 L NO931029 L NO 931029L NO 93931029 A NO93931029 A NO 93931029A NO 931029 A NO931029 A NO 931029A NO 931029 L NO931029 L NO 931029L
Authority
NO
Norway
Prior art keywords
plasma
chambers
substrate
assisted
spacious
Prior art date
Application number
NO93931029A
Other languages
English (en)
Other versions
NO931029D0 (no
Inventor
Peter B Mumola
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of NO931029D0 publication Critical patent/NO931029D0/no
Publication of NO931029L publication Critical patent/NO931029L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Reaktor (10) ved et vakuumhus (30) som omhyller flere plasmakamre (14a, 14b) for å utføre lokal plasma- assistert kjemisk etsing på et etsbart substrat (12). Kamrene (14a, 14b) kan beveges og er dimensjonert i samsvar med materialet som ønskes fjernet. Radiofre- kvensdrevne drevne elektroder (20a, 20b) og gassdif- fusor/elektroder (22a, 22b) har samme diameter som kamrene. Substratet (12) er montert på en substrahol- der (44) som også virker på den andre elektroden. Holderen (44) er montert på en X-Y-posisJoneringstabell (46). En prosessgass strømmer inn i et på forhånd valgt kammer med radlofrekvensenergi for således å oppdele prosessgassen til et plasma. Plasmakamrene' (14a, 14b) kan bli avsøkt over substratoverflåten mens gapet mellom kamrene og substratet varieres for å gi en ønsket etseprofil.
NO93931029A 1992-03-23 1993-03-22 Fremgangsmaate og anordning for aa tilveiebringe variabel, rommessig frekvensstyring i plasmaassistert, kjemisk etsing NO931029L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/854,718 US5292400A (en) 1992-03-23 1992-03-23 Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching

Publications (2)

Publication Number Publication Date
NO931029D0 NO931029D0 (no) 1993-03-22
NO931029L true NO931029L (no) 1993-09-24

Family

ID=25319390

Family Applications (1)

Application Number Title Priority Date Filing Date
NO93931029A NO931029L (no) 1992-03-23 1993-03-22 Fremgangsmaate og anordning for aa tilveiebringe variabel, rommessig frekvensstyring i plasmaassistert, kjemisk etsing

Country Status (6)

Country Link
US (1) US5292400A (no)
EP (1) EP0565259A1 (no)
JP (1) JPH0757911B2 (no)
IL (1) IL105026A (no)
NO (1) NO931029L (no)
TW (1) TW235378B (no)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385633A (en) * 1990-03-29 1995-01-31 The United States Of America As Represented By The Secretary Of The Navy Method for laser-assisted silicon etching using halocarbon ambients
JP3350237B2 (ja) * 1994-08-29 2002-11-25 株式会社東芝 エッチング方法及び装置
US5811021A (en) * 1995-02-28 1998-09-22 Hughes Electronics Corporation Plasma assisted chemical transport method and apparatus
US5996528A (en) * 1996-07-02 1999-12-07 Novellus Systems, Inc. Method and apparatus for flowing gases into a manifold at high potential
US6030887A (en) * 1998-02-26 2000-02-29 Memc Electronic Materials, Inc. Flattening process for epitaxial semiconductor wafers
US20010049196A1 (en) * 1997-09-09 2001-12-06 Roger Patrick Apparatus for improving etch uniformity and methods therefor
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US20080190558A1 (en) * 2002-04-26 2008-08-14 Accretech Usa, Inc. Wafer processing apparatus and method
US20080017316A1 (en) * 2002-04-26 2008-01-24 Accretech Usa, Inc. Clean ignition system for wafer substrate processing
US20080011332A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
DE10239083B4 (de) * 2002-08-26 2009-09-03 Schott Ag Vorrichtung zum Versorgen einer Prozesskammer mit fluiden Medien und deren Verwendung
US20040110314A1 (en) * 2002-12-05 2004-06-10 Ravi Kramadhati V. Silicon-on-insulator devices and methods for fabricating the same
US7500445B2 (en) * 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
US8039052B2 (en) * 2007-09-06 2011-10-18 Intermolecular, Inc. Multi-region processing system and heads
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5179650A (ja) * 1975-01-08 1976-07-12 Hitachi Ltd Supatsutaetsuchingusochi
US4233109A (en) * 1976-01-16 1980-11-11 Zaidan Hojin Handotai Kenkyu Shinkokai Dry etching method
US4411733A (en) * 1982-06-18 1983-10-25 Bell Telephone Laboratories, Incorporated SPER Device for material working
JPH0666298B2 (ja) * 1983-02-03 1994-08-24 日電アネルバ株式会社 ドライエッチング装置
US4680086A (en) * 1986-03-20 1987-07-14 Motorola, Inc. Dry etching of multi-layer structures
JPS62290885A (ja) * 1986-06-10 1987-12-17 Toshiba Corp 反応性イオンエツチング装置
JPH0638405B2 (ja) * 1986-11-19 1994-05-18 東京応化工業株式会社 プラズマ反応処理装置
DE68910378T2 (de) * 1988-05-06 1994-03-03 Fujitsu Ltd Anlage zur Erzeugung dünner Schichten.
FR2639567B1 (fr) * 1988-11-25 1991-01-25 France Etat Machine a microfaisceau laser d'intervention sur des objets a couche mince, en particulier pour la gravure ou le depot de matiere par voie chimique en presence d'un gaz reactif
DE3914065A1 (de) * 1989-04-28 1990-10-31 Leybold Ag Vorrichtung zur durchfuehrung von plasma-aetzverfahren
JPH04362091A (ja) * 1991-06-05 1992-12-15 Mitsubishi Heavy Ind Ltd プラズマ化学気相成長装置

Also Published As

Publication number Publication date
NO931029D0 (no) 1993-03-22
US5292400A (en) 1994-03-08
EP0565259A1 (en) 1993-10-13
JPH0617267A (ja) 1994-01-25
JPH0757911B2 (ja) 1995-06-21
TW235378B (no) 1994-12-01
IL105026A0 (en) 1993-07-08
IL105026A (en) 1996-05-14

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